Results 51 to 60 of about 1,395 (225)

Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor [PDF]

, 2017
Here, the utilizing of lateral unidirectional bipolar-type insulated-gate transistors (Lubistors) for pH detection was demonstrated for the first time.
Tie Li, Siegfried Mantl, Han, Qinghua, Wang, Yuelin, Gao, Anran, Qinghua Han, Anran Gao, Mantl, Siegfried, Zhao, Qing-Tai, Keyvan Narimani, Narimani, Keyvan, Qing-Tai Zhao, Yuelin Wang, Li, Tie   +13 more
core   +1 more source

The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)

Applied Sciences, 2021
The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness of 1.50 mm, covered with a 35 μm thick Cu layer, were used. A surface finish was
Adrian Pietruszka, Paweł Górecki, Sebastian Wroński, Balázs Illés, Agata Skwarek   +4 more
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Device Simulation and Design Optimization for Diamond Based Insulated-gate Bipolar Transistors [PDF]

, 2006
A diamond based insulated gate bipolar transistor is incorporated into a two-dimensional device simulator (MEDICI) to examine the current gain (β) and potential distribution across the device. Initially, work has focused on an important component of IGBT
Haitao Ye, Richard B. Jackman, David Garner, Niall Tumilty   +3 more
core   +1 more source

Long Short-Term Memory Mixture Density Network for Remaining Useful Life Prediction of IGBTs

Technologies
A reliable prediction of the remaining useful life of critical electronic components, such as insulated gate bipolar transistors, is necessary for preventing failures in many industrial applications.
Yarens J. Cruz, Fernando Castaño, Rodolfo E. Haber   +2 more
doaj   +1 more source

Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends

Energies, 2023
Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion.
Omar Sarwar Chaudhary, Mouloud Denaï, Shady S. Refaat, Georgios Pissanidis   +3 more
doaj   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules

Micromachines
With the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Peisheng Liu, Yaohui Deng
openaire   +3 more sources

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source