Results 51 to 60 of about 585,541 (220)
IEEE Access, 2020 This paper proposes open fault diagnosis and tolerance control methods for grid-connected hybrid active neutral-point-clamped (ANPC) inverters with optimized carrier-based pulse width modulation.
Ye-Ji Kim +3 more
doaj +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation
Advanced Electronic Materials, EarlyView.A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang +6 more
wiley +1 more source
New Technology and Development Trend of Insulated Gate Bipolar Transistors
Kongzhi Yu Xinxi Jishu, 2017 IGBT with fine-pattern trench gate, thin drift region, field stop as well as enhanced carrier doping concentration in emitter side is the mainstream device structure at present.
ZHANG Jinping +5 more
doaj
Carbon Energy, EarlyView.This comprehensive review presents a progressive roadmap for perovskite vision detectors. Centered on perovskite‐based artificial perception, the graphic illustrates a systematic evolution: starting with fundamental material engineering and device architectures, advancing toward complex functional strategies such as flexible neuromorphic imaging ...
Chenglong Li +14 more
wiley +1 more source
Series connection of insulated gate bipolar transistors (IGBTs)
, 2012 High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber ...
SHAMMAS, Noel +3 more
core +1 more source
Efficient 3-D Simulation of Avalanche Breakdown and Transport in Wide-Area IGBT Corners
IEEE Journal of the Electron Devices SocietyWe present a novel methodology to perform reliable and efficient three-dimensional (3D) wide-area simulations of avalanche breakdown in the corners of insulated gate bipolar transistors (IGBTs), based on approximations in the trench-gate and source ...
Massimiliano Galvagno +8 more
doaj +1 more source
Energies, 2020 State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
doaj +1 more source
A Comprehensive Review of Fault‐Current Limiter Technologies for Smart and Resilient Power Systems
Energy Science &Engineering, EarlyView.This review compares superconducting, solid‐state, and hybrid fault‐current limiters (FCLs) for modern alternating current, direct current, and hybrid grids. It shows that optimal FCL selection depends on fault characteristics, network configuration, voltage level, protection coordination, and resilience requirements rather than on a universally ...
Abdelrahman Farghly +5 more
wiley +1 more source
ETRI JournalThe power relay assembly (PRA) is an essential component to ensure the safety of an electric vehicle. We propose a semiconductor-based precharge switch to overcome the shortcomings of the conventional mechanical relay, which is currently used as the ...
Dong Yun Jung +6 more
doaj +1 more source