Results 51 to 60 of about 559,762 (225)
IEEE Access, 2020 This paper proposes open fault diagnosis and tolerance control methods for grid-connected hybrid active neutral-point-clamped (ANPC) inverters with optimized carrier-based pulse width modulation.
Ye-Ji Kim +3 more
doaj +1 more source
Advanced Science, EarlyView.Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee +5 more
wiley +1 more source
New Technology and Development Trend of Insulated Gate Bipolar Transistors
Kongzhi Yu Xinxi Jishu, 2017 IGBT with fine-pattern trench gate, thin drift region, field stop as well as enhanced carrier doping concentration in emitter side is the mainstream device structure at present.
ZHANG Jinping +5 more
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Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Efficient 3-D Simulation of Avalanche Breakdown and Transport in Wide-Area IGBT Corners
IEEE Journal of the Electron Devices SocietyWe present a novel methodology to perform reliable and efficient three-dimensional (3D) wide-area simulations of avalanche breakdown in the corners of insulated gate bipolar transistors (IGBTs), based on approximations in the trench-gate and source ...
Massimiliano Galvagno +8 more
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Energies, 2020 State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
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Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation
Advanced Electronic Materials, EarlyView.A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang +6 more
wiley +1 more source
ETRI JournalThe power relay assembly (PRA) is an essential component to ensure the safety of an electric vehicle. We propose a semiconductor-based precharge switch to overcome the shortcomings of the conventional mechanical relay, which is currently used as the ...
Dong Yun Jung +6 more
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Physics‐Grounded Probabilistic Bits for Hardware‐Efficient Intelligent Inference and Optimization
Advanced Intelligent Systems, EarlyView.Si–SiNx interface traps are harnessed as a complementary metal–oxide–semiconductor‐compatible source of controllable randomness for probabilistic bits. Pulse‐width‐programmed stochastic capture converts nanoscale defect dynamics into Boltzmann‐consistent binary outputs, while a physics‐based Simulation Program with Integrated Circuit Emphasis model ...
Dokyoung Lee +3 more
wiley +1 more source
Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII [PDF]
, 2004 This work reports on the development and fabrication of High Electron Mobility Transistors with a gate length of less than 30nm. The T-shaped gates were realized using a two-stage "bi-lithography" process that creates a T-shaped image in a bilayer of
Moran, D.A.J. +11 more
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