Results 61 to 70 of about 7,414 (228)
Energies, 2017 This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems.
Xiaofeng Ding +5 more
doaj +1 more source
IEEE Access, 2020 This paper proposes open fault diagnosis and tolerance control methods for grid-connected hybrid active neutral-point-clamped (ANPC) inverters with optimized carrier-based pulse width modulation.
Ye-Ji Kim +3 more
doaj +1 more source
Memristive Physical Reservoir Computing
Advanced Science, EarlyView.Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao +9 more
wiley +1 more source
Gyrator employing field effect transistors [PDF]
, 1973 A gyrator circuit of the conventional configuration of two amplifiers in a circular loop, one producing zero phase shift and the other producing 180 deg phase reversal is examined. All active elements are MOS field effect transistors.
Hochmair, E. S.
core +1 more source
Sensors, 2019 With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents.
Chaoqun Jiao +4 more
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Advanced Science, EarlyView.Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen +8 more
wiley +1 more source
Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules
MicromachinesWith the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Peisheng Liu, Yaohui Deng
openaire +3 more sources
Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects [PDF]
, 2015 An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- μm-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and
Castellazzi, Alberto +3 more
core +2 more sources
High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid
Advanced Electronic Materials, EarlyView.We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie +13 more
wiley +1 more source
Energies, 2020 State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
doaj +1 more source