Results 61 to 70 of about 1,395 (225)
Energies, 2017 This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems.
Xiaofeng Ding +5 more
doaj +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Design, Simulation and Fabrication of Insulated Gate Bipolar Transistors (IGBT) [PDF]
, 2003 This project serves as a study to determine the feasibility of the current CMOS toolsets and processes available at Semiconductor \u26 Microsystems Fabrication Laboratory (SMFL) for the fabrication of whole wafer power devices.
Jhaveri, Tejas K
core +1 more source
IEEE Access, 2020 This paper proposes open fault diagnosis and tolerance control methods for grid-connected hybrid active neutral-point-clamped (ANPC) inverters with optimized carrier-based pulse width modulation.
Ye-Ji Kim +3 more
doaj +1 more source
Physics‐Grounded Probabilistic Bits for Hardware‐Efficient Intelligent Inference and Optimization
Advanced Intelligent Systems, EarlyView.Si–SiNx interface traps are harnessed as a complementary metal–oxide–semiconductor‐compatible source of controllable randomness for probabilistic bits. Pulse‐width‐programmed stochastic capture converts nanoscale defect dynamics into Boltzmann‐consistent binary outputs, while a physics‐based Simulation Program with Integrated Circuit Emphasis model ...
Dokyoung Lee +3 more
wiley +1 more source
Trench insulated gate bipolar transistor - a high power switching device [PDF]
, 1995 This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and ...
Amaratunga, G, Udrea, F, ,
core
Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation [PDF]
, 2018 Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only
Gwang Min Sun +3 more
core +1 more source
Sensors, 2019 With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents.
Chaoqun Jiao +4 more
doaj +1 more source
Angewandte Chemie International Edition, EarlyView.Electrochemical energy storage breaks down under extreme miniaturization, where interfaces and space‐charge dominate device behavior. This work introduces a fixed‐charge selective interphase (FCSI) integrated into a twin‐tube micro‐Swiss‐roll architecture.
Yaping Yan +12 more
wiley +1 more source
Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology [PDF]
, 1997 This paper presents preliminary results towards developing the next generation of Insulated Gate Bipolar Transistors for high voltage applications.
Udrea, F +8 more
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