Results 71 to 80 of about 585,541 (220)
Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress. [PDF]
SN Appl Sci, 2021 Memarian Sorkhabi M +3 more
europepmc +1 more source
Organic neuromorphic optoelectronic sensing materials, intelligent devices, and bionic systems
InfoMat, EarlyView.Due to the excellent performance and biocompatibility, organic neuromorphic photoelectric sensing technology is regarded as a highly promising research field. In this review, Liu et al. summarize the recent advances in related materials, devices, and system integration.
Yu‐ang Liu +4 more
wiley +1 more source
Gate protective device for insulated gate field-effect transistors [PDF]
, 1972 Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region.
Sunshine, R. A.
core
, 2018 At present, energy exhausted and environmental pollution are important issues, vigorously promoting new energy and improving the utilization efficiency and management level of new energy is an important way to achieve sustainable social development ...
Gao-Sheng Wang +4 more
core +1 more source
MXene‐Based Flexible Memory and Neuromorphic Devices
Small, EarlyView.The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li +13 more
wiley +1 more source
Analysis of Trench Insulated Gate Bipolar Transistors
, 2016 This thesis is focused on the selection and optimalization of suitable analytical methods for study of TIGBT (Trench Insulated Gate Bipolar Transistor) structures with a use of methods, that depict material composition of the studied sample.
Karlovský, Juraj
core +1 more source
Design of a 100 kHz wide bandgap inverter for motor applications with active damped sine wave filter
The Journal of Engineering, 2019 In this study, a three-phase motor inverter with sinusoidal output voltages based on the application of gallium nitride transistors and advanced control is analysed.
Franz Maislinger +4 more
doaj +1 more source
Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
Small, EarlyView.An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn +8 more
wiley +1 more source
Multiplexer uses insulated gate-field effect transistors [PDF]
, 1967 Small lightweight multiplexer incorporates IG-FETs /Insulated Gate-Field Effect Transistors/ for all digital logic functions, including the internally generated 3.6-kHz clock.
Gussow, S. S.
core
Application of Silver Sintering Technology in Press-pack IGBTs
机车电传动, 2021 Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar ...
Tingchang SHI +5 more
doaj