Results 71 to 80 of about 1,395 (225)

Snubberless voltage sharing of series-connected insulated-gate devices by a novel gate control strategy [PDF]

, 2001
Insulated gate devices, such as metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs), are increasingly used in high-voltage power converters where a request for fast power switches is growing.
A. Galluzzo, M. Melito, S. Musumeci, A. Raciti, G. Belverde   +4 more
core   +1 more source

Perovskite Photodetectors at the Intelligence Frontier: From Tunable Materials to Adaptive Optoelectronic Systems

Carbon Energy, EarlyView.
This comprehensive review presents a progressive roadmap for perovskite vision detectors. Centered on perovskite‐based artificial perception, the graphic illustrates a systematic evolution: starting with fundamental material engineering and device architectures, advancing toward complex functional strategies such as flexible neuromorphic imaging ...
Chenglong Li, Wei Qu, Deepak Kumar, Naini Jain, Nur Wardina Syahirah binti Mohamad Fadil, Nur Najiha binti Ahmad Rasid, Emannuel Kymakis, Maria Vasilopoulou, Chunxiong Bao, Feng Gao, Peng Gao, Sanjeev Kumar Sharma, Mohammad Khaja Nazeeruddin, Abd. Rashid bin Mohd Yusoff, Haotong Wei   +14 more
wiley   +1 more source

Prognostics of Insulated Gate Bipolar Transistors [PDF]

, 2011
Insulated gate bipolar transistors (IGBTs) are the devices of choice for medium and high power, low frequency applications. IGBTs have been reported to fail under excessive electrical and thermal stresses in variable speed drives and are considered as ...
Patil, Nishad Kashinath
core  

New Technology and Development Trend of Insulated Gate Bipolar Transistors

Kongzhi Yu Xinxi Jishu, 2017
IGBT with fine-pattern trench gate, thin drift region, field stop as well as enhanced carrier doping concentration in emitter side is the mainstream device structure at present.
ZHANG Jinping, ZHAO Qian, GAO Wei, LI Zehong, REN Min, ZHANG Bo   +5 more
doaj  

Efficient 3-D Simulation of Avalanche Breakdown and Transport in Wide-Area IGBT Corners

IEEE Journal of the Electron Devices Society
We present a novel methodology to perform reliable and efficient three-dimensional (3D) wide-area simulations of avalanche breakdown in the corners of insulated gate bipolar transistors (IGBTs), based on approximations in the trench-gate and source ...
Massimiliano Galvagno, Lucia Zullino, Simone Mariani, Paola Zuliani, Salvatore-Fabio Liotta, Silvia Cannizzaro, Gerardo Malavena, Christian Monzio Compagnoni, Alessandro S. Spinelli   +8 more
doaj   +1 more source

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

Energies, 2020
State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri, Vaclav Smidl, Zdenek Peroutka, Lubos Streit   +3 more
doaj   +1 more source

A Novel Bipolar DC Connection Strategy for Photovoltaic Power Plants With a 50% Reduction in DC Cabling Length

Energy Science &Engineering, EarlyView.
Bipolar configuration is a new topology in the direct current (DC) system of photovoltaic power plants, which is topologically analogous to the bipolar configuration utilised in High‐Voltage Direct Current power transmission systems. DC cable length and copper usage are reduced by 50% using a bipolar configuration.
Duško M. Tovilović, Željko R. Đurišić, Vladan R. Durković   +2 more
wiley   +1 more source

An analytical model for the lateral insulated gate bipolar transistor(LIGBT) on thin SOI [PDF]

, 2006
While there are several analytical models dedicated to vertical insulated gate bipolar transistors (IGBTs) there is virtually no reliable model for lateral IGBTs (LIGBTs).
NAPOLI, ETTORE, Napoli, E, Udrea, F, Gamage, S, V. PATHIRANA, S. GAMAGE, ,, F. UDREA, Pathirana, V   +8 more
core   +1 more source

Precharge switch based on metal-oxide-semiconductor-controlled thyristor for power relay assembly of battery electric vehicles

ETRI Journal
The power relay assembly (PRA) is an essential component to ensure the safety of an electric vehicle. We propose a semiconductor-based precharge switch to overcome the shortcomings of the conventional mechanical relay, which is currently used as the ...
Dong Yun Jung, Kun Sik Park, Sang In Kim, Hyun Gyu Jang, Jongil Won, Yong Ha Lee, Jong-Won Lim   +6 more
doaj   +1 more source

Hybrid Inverters With Dual Switching Frequencies for Switched Reluctance Motors

Energy Science &Engineering, EarlyView.
A hybrid dual‐switching‐frequency inverter for SRMs is proposed, combining SiC and IGBT devices based on rotor inductance. The method enables accurate current tracking with simple hysteresis control, significantly reducing torque ripple, vibration, and acoustic noise while cutting inverter cost compared to full‐SiC solutions.
Fares S. El‐Faouri, Majd G. Batarseh, Hamzeh J. Jaber, Ayman Faza, Wejdan Abu Elhaija   +4 more
wiley   +1 more source