Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance [PDF]
, 2004 The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area.
Uchino, T +8 more
core +2 more sources
Organic neuromorphic optoelectronic sensing materials, intelligent devices, and bionic systems
InfoMat, EarlyView.Due to the excellent performance and biocompatibility, organic neuromorphic photoelectric sensing technology is regarded as a highly promising research field. In this review, Liu et al. summarize the recent advances in related materials, devices, and system integration.
Yu‐ang Liu +4 more
wiley +1 more source
Design of a 100 kHz wide bandgap inverter for motor applications with active damped sine wave filter
The Journal of Engineering, 2019 In this study, a three-phase motor inverter with sinusoidal output voltages based on the application of gallium nitride transistors and advanced control is analysed.
Franz Maislinger +4 more
doaj +1 more source
MXene‐Based Flexible Memory and Neuromorphic Devices
Small, EarlyView.The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li +13 more
wiley +1 more source
Monte Carlo simulation of silicon-germanium transistors [PDF]
, 2002 Self-consistent Monte Carlo simulation studies of n-channel Si/SiGe modulation doped field effect transistors (MODFETs) and silicon-on-insulator lateral bipolar junction transistors (SOI- LBJTs) are reported in this thesis. As a preliminary to the device
Yangthiasong, Anucha +1 more
core
Assessment of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors through a harmonic-balance-based CAD-oriented dynamic stability analysis technique [PDF]
, 2009 We present a novel analysis of thermal instabilities and oscillations in multifinger heterojunction bipolar transistors (HBTs), based on a harmonic-balance computer-aided-design (CAD)-oriented approach to the dynamic stability assessment.
Bonani, Fabrizio +4 more
core +1 more source
Voltage Balancing in Series-Connected GaN Devices Using Scalable Transformer-Coupled Gate Driver
IEEE Open Journal of the Industrial Electronics SocietyThis article presents a scalable transformer-coupled open-loop gate-driving technique that enables voltage balancing across series-connected GaN devices.
Sohrab Ghafoor +4 more
doaj +1 more source
Energies, 2019 The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications.
Baochao Wang +6 more
doaj +1 more source
Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
Small, EarlyView.An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn +8 more
wiley +1 more source
Application of Silver Sintering Technology in Press-pack IGBTs
机车电传动, 2021 Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar ...
Tingchang SHI +5 more
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