Results 91 to 100 of about 7,414 (228)
ChemElectroChem, Volume 13, Issue 9, 5 May 2026.Electrochemical memristive devices, whose resistance is modulated by ion migration and redox reactions, offer a hardware pathway toward brain‐inspired computing. This review summarizes key switching mechanisms—electrochemical metallization (ECM), valence change mechanism (VCM), and thermochemical effects (TCM)—and discusses how materials and device ...
Junyao Xu, Yiwei Sun
wiley +1 more source
Energies, 2019 The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications.
Baochao Wang +6 more
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Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress. [PDF]
SN Appl Sci, 2021 Memarian Sorkhabi M +3 more
europepmc +1 more source
Advanced Functional Materials, Volume 36, Issue 36, 4 May 2026.Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon +6 more
wiley +1 more source
An introduction to the BANNING design automation system for shuttle microelectronic hardware development [PDF]
The BANNING MOS design system is presented. It complements rather than supplant the normal design activities associated with the design and fabrication of low-power digital electronic equipment.
Mcgrady, W. J.
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Enhancement of reliability in condition monitoring techniques in wind turbines [PDF]
, 2019 The majority of electrical failures in wind turbines occur in the semiconductor components (IGBTs) of converters. To increase reliability and decrease the maintenance costs associated with this component, several health-monitoring methods have been ...
Dinh, Truong Quang +5 more
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Application of Silver Sintering Technology in Press-pack IGBTs
机车电传动, 2021 Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar ...
Tingchang SHI +5 more
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From Supramolecular Order to Device Performance in Langmuir–Blodgett and Langmuir–Schaefer Films
ChemNanoMat, Volume 12, Issue 5, May 2026.This review delves into the theoretical fundamentals and key methods for the electrical and electrochemical characterization of Langmuir–Blodgett (LB) and Langmuir–Schaefer (LS) films, with a particular emphasis on the precise nanostructuring control these techniques offer. By analyzing a selection of influential studies—ranging from early foundational
Maria Luisa Braunger +6 more
wiley +1 more source
Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development
, 1992 A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing ...
Gilbert, P.V., Neudeck, G.W.
openaire +2 more sources
Field Programmable Gate Arrays Usage in Industrial Automation Systems [PDF]
, 2016 Tato disertační práce se zabývá využitím programovatelných hradlových polí (FPGA) v diagnostice měničů, využívajících spínaných IGBT tranzistorů. Je zaměřena na budiče těchto výkonových tranzistorů a jejich struktury. Přechodné jevy veličin, jako jsou IG,
Nouman, Ziad
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