Results 91 to 100 of about 585,541 (220)

Trench insulated gate bipolar transistor - a high power switching device

, 1995
This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and ...
Amaratunga, G, Udrea, F, ,
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Single-Phase Self-Oscillating Jets for Enhanced Heat Transfer: Preprint [PDF]

, 2008
Self-oscillating jets have potential to cool insulated gate bipolar transistors in vehicle power electronics ...
Vlahinos, A., Narumanchi, S., Kelly, K., Mihalic, M., Hester, R., Gopalan, S.   +5 more
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Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

, 2001
SiGe heterojunction bipolar transistors (HTBs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p+ SiGe base and n-Si emitter cap.
Ashburn, Peter, Lamb, Andrew C., Bonar, J.M., Cristiano, Fuccio, Hemment, Peter L. F., Hall, Stephen, Schiz, J.F.W.   +6 more
core   +1 more source

Control system for direct torque controlled and field-oriented controlled drives of permanent magnet synchronous motor

Journal of Advanced Engineering and Computation
This paper delves into the critical aspect of component selection in designing control systems for field-oriented control (FOC) and direct torque control (DTC) of three-phase permanent magnet synchronous motors (PMSMs).
Hau Huu Vo, Chau Si Thien Dong, Dung Quang Nguyen, Quang Thanh Nguyen, Trung Van Nguyen, Duy Hoang Khanh Tran, Lan Bao Quach, Liem Dung Phan   +7 more
doaj   +1 more source

Simulation and optimization of diode and insulated gate bipolar transistor interaction in a chopper cell using MATLAB and Simulink

, 2007
Recently, a simulation method for power electronic devices has emerged, which has high accuracy and short run times based on a Fourier model of the device physics.
Santi, Enrico, Bryant, Angus T., Hudgins, Jerry L., Hudgins, JL, Palmer, PR, Bryant, AT, Santi, E, ,, Palmer, Patrick R.   +8 more
core   +1 more source

Computational‐Efficient IGBT and Diode Thermal Modelling Methodology With High Accuracy

IET Power Electronics
In an industrial context where high reliability is an increasingly important requirement, thermal modelling of power semiconductors becomes necessary for diagnostics and prognostics.
Ciro Alosa, Abraham M. Alcaide, Alejandro Stowhas‐Villa, Jhonattan G. Berger, Fabio Immovilli, Christian A. Rojas, Ricardo Lizana F, Giampaolo Buticchi, Samir Kouro, Jose I. Leon   +9 more
doaj   +1 more source

Monte Carlo simulation of silicon-germanium transistors [PDF]

, 2002
Self-consistent Monte Carlo simulation studies of n-channel Si/SiGe modulation doped field effect transistors (MODFETs) and silicon-on-insulator lateral bipolar junction transistors (SOI- LBJTs) are reported in this thesis. As a preliminary to the device
Yangthiasong, Anucha, Yangthaisong, Anucha   +1 more
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Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

, 2006
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P., Gili, E., Kunz, D., Hakim, M.M.A., Uchino, T., Hall, S., de Groot, C.H.   +6 more
core   +1 more source

A Device for Investigating the AC Characteristics of Metal Oxide Varistors

IET Power Electronics
In recent years, the AC characteristics of metal oxide varistors have attracted growing research interest. This study presents an insulated‐gate bipolar transistor‐based device designed to address the limitations of existing power supply systems, which ...
Xinyan Xiao, Lanjun Yang, Yonggang Yue
doaj   +1 more source

Prognostics of Insulated Gate Bipolar Transistors [PDF]

, 2011
Insulated gate bipolar transistors (IGBTs) are the devices of choice for medium and high power, low frequency applications. IGBTs have been reported to fail under excessive electrical and thermal stresses in variable speed drives and are considered as ...
Patil, Nishad Kashinath
core   +1 more source