Results 111 to 120 of about 1,395 (225)

A Device for Investigating the AC Characteristics of Metal Oxide Varistors

IET Power Electronics
In recent years, the AC characteristics of metal oxide varistors have attracted growing research interest. This study presents an insulated‐gate bipolar transistor‐based device designed to address the limitations of existing power supply systems, which ...
Xinyan Xiao, Lanjun Yang, Yonggang Yue
doaj   +1 more source

Multipoint Thermal Sensing System for Power Semiconductor Devices Utilizing Fiber Bragg Gratings

Applied Sciences
This study investigates the feasibility of using fiber Bragg grating (FBG) sensors for multipoint thermal monitoring of several power semiconductor devices (PSDs), such as insulated gate bipolar transistors (IGBTs), and rectifiers assembled on a common ...
Ridwanullahi Isa, Naveed Iqbal, Mohammad Abido, Jawad Mirza, Khurram Karim Qureshi   +4 more
doaj   +1 more source

Ultra-high voltage 4H-SiC bi-directional insulated gate bipolar transistors [PDF]

, 2016
May 2016School of Engineering4H- Silicon Carbide (4H-SiC) is an attractive material for power semiconductor devices due to its large bandgap, high critical electric field and high thermal conductivity compared to Silicon (Si).
Chowdhury, Sauvik
core  

Condition Monitoring for Discrete Packaged Insulated Gate Bipolar Transistors in Power Converters [PDF]

, 2020
Extensive utilization of insulated gate bipolar transistor (IGBTs) in the power converters has significantly increased concerns over its reliability.
Ali, Syed Huzaif
core  

Advanced insulated-gate bipolar transistors for high-speed hard-switching applications [PDF]

, 2015
The insulated-gate bipolar transistors (IGBTs) have been widely used in a variety of power switching applications such as industrial motor drives, automotive and traction controls, renewables, white goods, and so forth.
Feng, Hao
core  

High Voltage (1200V) Insulated Gate Bipolar Transistors Design and Manufacture [PDF]

, 2014
In the past two years, we have done a series of research to design a high voltage up to 1000 volts POWERMOS device and observed that terminal guard ring design could affect the reliability of PowerMOS device.
貢中元
core  

Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications [PDF]

, 2009
In recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky ...
Husain, Muhammad Khaled
core  

Single-Phase Self-Oscillating Jets for Enhanced Heat Transfer: Preprint [PDF]

, 2008
Self-oscillating jets have potential to cool insulated gate bipolar transistors in vehicle power electronics ...
Vlahinos, A., Narumanchi, S., Kelly, K., Mihalic, M., Hester, R., Gopalan, S.   +5 more
core  

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

A high-frequency silicon-graphene-germanium barristor. [PDF]

Nat Commun
Wang X, Sun S, Qiao Z, Jiang H, Li C, Jiang H, Bai J, Song X, Li X, Wang X, Zhu X, Feng S, Li B, Liang J, Wang L, Xue Z, Ohno Y, Gao J, Di Z, Sun D, Liu C.   +20 more
europepmc   +1 more source