Results 101 to 110 of about 585,541 (220)

Localized Lifetime Control In Silicon Bipolar Power Devices By Voids Induced By He Ion Implantation

, 1997
Localized lifetime control in silicon bipolar devices is presented and discussed. It was achieved by formation of a void layer by He ion implantation.
E. Rimini, V. Raineri, F. Frisina, M. Saggio   +3 more
core   +1 more source

Multipoint Thermal Sensing System for Power Semiconductor Devices Utilizing Fiber Bragg Gratings

Applied Sciences
This study investigates the feasibility of using fiber Bragg grating (FBG) sensors for multipoint thermal monitoring of several power semiconductor devices (PSDs), such as insulated gate bipolar transistors (IGBTs), and rectifiers assembled on a common ...
Ridwanullahi Isa, Naveed Iqbal, Mohammad Abido, Jawad Mirza, Khurram Karim Qureshi   +4 more
doaj   +1 more source

Reduction of Parasitic Capacitance in Vertical MOSFETs by Spacer Local Oxidation

, 2003
Application of double gate or surround-gate vertical metal oxide semiconductor field effect transistors (MOSFETs) is hindered by the parasitic overlap capacitance associated with their oayout, which is considerably larger than for a lateral MOSFET on the
Ashburn, Peter, Hall, Steven, Donaghy, David C., Uchino, Takashi, Hemment, Peter L F, Kunz, V Dominik, Hemment, P. L. F., Donaghy, David C, De Groot, C. H. (Kees), de Groot, C.H.(Kees), Wang, Yun, Kunz, V. Dominik   +11 more
core   +1 more source

Hybrid Inverters With Dual Switching Frequencies for Switched Reluctance Motors

Energy Science & Engineering
This paper proposes a novel inverter topology for driving switched reluctance motors (SRMs), utilizing two conventional three‐phase inverters for a total of 12 switches.
Fares S. El‐Faouri, Majd G. Batarseh, Hamzeh J. Jaber, Ayman Faza, Wejdan Abu Elhaija   +4 more
doaj   +1 more source

Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules

With the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...
Yaohui Deng, Peisheng Liu
core   +1 more source

Insulated Gate Bipolar Transistor Closed-loop Active Current and Voltage Slope Control [PDF]

, 2013
IGBT-transistoreita (Insulated Gate Bipolar Transistor) käytetään tehoelektroniikassa kytkinkomponentteina erityisesti teholähteissä ja moottorikäytöissä.
Räisänen, Paula
core   +1 more source

Modeling the turn-off characteristics of insulated-gate bipolar transistor

, 2012
[[abstract]]In this paper, a more accurate model for obtaining the turn-off current of insulated-gate bipolar transistors (IGBT) is proposed which shows that the tom-off current is overestimated in the previous models.
Huang, Tsung-Yi;Gong, Jeng;Chen, Shin-Hui
core   +1 more source

Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor

, 2017
Here, the utilizing of lateral unidirectional bipolar-type insulated-gate transistors (Lubistors) for pH detection was demonstrated for the first time.
Tie Li, Siegfried Mantl, Han, Qinghua, Wang, Yuelin, Gao, Anran, Qinghua Han, Anran Gao, Mantl, Siegfried, Zhao, Qing-Tai, Keyvan Narimani, Narimani, Keyvan, Qing-Tai Zhao, Yuelin Wang, Li, Tie   +13 more
core   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

Improved ASHCPWM with Reduced IGBT Switching Actions and Kalman Filter-Based Zero-Sequence Suppression for Open-End Winding PMSM Drives. [PDF]

Micromachines (Basel)
Zhang Y, Qu M, Xie H, Xia Y, Hu L.
europepmc   +1 more source