Results 101 to 110 of about 1,395 (225)

Application of Silver Sintering Technology in Press-pack IGBTs

机车电传动, 2021
Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar ...
Tingchang SHI, Han LI, Guiqin CHANG, Haihui LUO, Guozhong DONG, Guoyou LIU   +5 more
doaj  

Application Status and Development Trends of DC Ice‐Melting Devices in China's Power Grid

IET Smart Energy Systems, EarlyView.
This paper summarises the development history and engineering application status of DC ice‐melting devices (DCIMD) in China, analyses the principles, advantages, disadvantages and adaptability of mainstream topologies and discusses the key problems and corresponding improvement directions.
Ming Lei, Tianlong Zhang, Zhenglin Li, Jian Wang, Tao Zhang, Peng Wang, Ruiqi Zhan   +6 more
wiley   +1 more source

Modeling of igbt with high bipolar gain for mitigating gate voltage oscillations during short circuit [PDF]

, 2019
In this paper, the impact of the p-n-p bipolar transistor gain on the short-circuit behavior of high-voltage trench insulated-gate bipolar transistors (IGBTs) is analyzed.
Corvasce, Chiara, Rahimo, Munaf, Reigosa, Paula Diaz, Iannuzzo, Francesco; id_orcid   +3 more
core   +1 more source

Design of a Three‐Phase PWM Rectifier Based on Improved Whale Optimization Algorithm Optimized Fuzzy Control

Advanced Control for Applications, Volume 8, Issue 3, September 2026.
Schematic diagram of the whale optimization algorithm (WOA)–optimized fuzzy proportional–integral–derivative (PID) controller. The WOA is employed to dynamically tune the scaling factor expressions and fuzzy control parameters (a(e)a(e), a(ec)a(ec), βpβp, βiβi), as well as the initial PID gains (kp0kp0, ki0ki0), based on the error (ee) and its ...
Xiaosong Tian, Meiguang Jiang, Congguo Jiang, Guangya Liu, Jun Zhang, Xiangwen Lv, Weijiang Yang, Ruoyu Yang   +7 more
wiley   +1 more source

Test Scheme and Degradation Model of Accumulated Electrostatic Discharge (ESD) Damage for Insulated Gate Bipolar Transistor (IGBT) Prognostics [PDF]

, 2019
This paper develops a degradation test scheme for insulated gate bipolar transistors (IGBTs) that are subjected to repeated electrostatic discharge (ESD).
Han, Bongtae, Youn, Byeng Dong, Park, Chan Hee, Lee, Junmin, Oh, Hyunseok   +4 more
core   +1 more source

A TRANSIENT MODEL FOR INSULATED GATE BIPOLAR TRANSISTORS (IGBTs) [PDF]

, 2002
The Insulated Gate Bipolar Transistor is widely accepted as the preferred switching device in a variety of power converters and motor drive applications.
Hajji, Mohsen A.
core  

Control system for direct torque controlled and field-oriented controlled drives of permanent magnet synchronous motor

Journal of Advanced Engineering and Computation
This paper delves into the critical aspect of component selection in designing control systems for field-oriented control (FOC) and direct torque control (DTC) of three-phase permanent magnet synchronous motors (PMSMs).
Hau Huu Vo, Chau Si Thien Dong, Dung Quang Nguyen, Quang Thanh Nguyen, Trung Van Nguyen, Duy Hoang Khanh Tran, Lan Bao Quach, Liem Dung Phan   +7 more
doaj   +1 more source

Neutral-point-clamped hybrid multilevel converter with DC fault blocking capability for medium-voltage DC transmission

Journal of Modern Power Systems and Clean Energy, 2017
This paper proposes a novel hybrid multilevel converter with DC fault-blocking capability, i.e., the neutral-point clamped hybrid multilevel converter (NHMC).
Xinyu YU, Yingdong WEI, Qirong JIANG, Xiaorong XIE, Yuquan LIU, Ke WANG   +5 more
doaj   +1 more source

Modeling and evaluation of high voltage, high power 4h-Silicon carbide insulated-gate bipolar transistors [PDF]

, 2018
In this study the current state of 12 kV, N-channel, 4H-Silicon carbide Insulated-Gate Bipolar transistors (IGBTs) was investigated for use in high voltage and high power applications.
Hinojosa, Miguel
core   +1 more source

Computational‐Efficient IGBT and Diode Thermal Modelling Methodology With High Accuracy

IET Power Electronics
In an industrial context where high reliability is an increasingly important requirement, thermal modelling of power semiconductors becomes necessary for diagnostics and prognostics.
Ciro Alosa, Abraham M. Alcaide, Alejandro Stowhas‐Villa, Jhonattan G. Berger, Fabio Immovilli, Christian A. Rojas, Ricardo Lizana F, Giampaolo Buticchi, Samir Kouro, Jose I. Leon   +9 more
doaj   +1 more source