Results 1 to 10 of about 106,588 (158)

Investigation of Impact of the Gate Circuitry on IGBT Transistor Dynamic Parameters

Science: Future of Lithuania, 2010
The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
exaly   +4 more sources

Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode

Energies, 2020
This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode.
Pawel Górecki, Krzysztof Górecki, Krzysztof Górecki   +2 more
exaly   +4 more sources

Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules [PDF]

Micromachines
With the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Peisheng Liu, Yaohui Deng
doaj   +3 more sources

IGBT Overcurrent Capabilities in Resonant Circuits [PDF]

Sensors
The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Basil Mohammed Al-Hadithi, Miguel Jimenez   +1 more
doaj   +3 more sources

Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT

IET Circuits, Devices and Systems, 2021
This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin, Yaohua Wang, Li Li, Longlai Xu, Kui Pu, Jun Zeng, Mohamed Darwish   +6 more
doaj   +2 more sources

Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT

Zhongguo dianli, 2022
Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability.
Lei CUI, Tong YANG, Ruliang ZHANG, Li MA, Yichen LI   +4 more
doaj   +2 more sources

Numerical Study of a Thyristor Injection Insulated Gate Bipolar Transistor (TI-IGBT) Using P-N-P Collector

IEEE Journal of the Electron Devices Society, 2019
A new thyristor injection concept is proposed to decrease conductivity modulation effects in an Insulated Gate Bipolar Transistor (TI-IGBT), which adds a floating p-type layer and an n-type layer at the collector side.
Mengxuan Jiang, Yulei Wang
exaly   +3 more sources

Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)

IEEE Journal of the Electron Devices Society, 2017
A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Bo Zhang, Wanjun Chen, Qi Zhou
exaly   +3 more sources

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study [PDF]

Micromachines
A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner
Song Yuan, Zhaoheng Yan, Yanzuo Li, Ying Wang, Qifan Liu, Xinbin Zhan, Xi Jiang, Yanjing He, Xiaowu Gong   +8 more
doaj   +2 more sources

Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor

IEEE Journal of the Electron Devices Society, 2020
In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
doaj   +1 more source