Results 1 to 10 of about 712 (158)
Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules [PDF]
MicromachinesWith the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Peisheng Liu, Yaohui Deng
doaj +4 more sources
Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
doaj +3 more sources
IGBT Overcurrent Capabilities in Resonant Circuits [PDF]
SensorsThe control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Basil Mohammed Al-Hadithi +1 more
doaj +2 more sources
Energies, 2020 This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode.
Paweł Górecki +2 more
exaly +3 more sources
IEEE Journal of the Electron Devices Society, 2019 A new thyristor injection concept is proposed to decrease conductivity modulation effects in an Insulated Gate Bipolar Transistor (TI-IGBT), which adds a floating p-type layer and an n-type layer at the collector side.
Mengxuan Jiang, Yulei Wang
exaly +3 more sources
Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
IEEE Journal of the Electron Devices Society, 2017 A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Bo Zhang, Wanjun Chen, Qi Zhou
exaly +3 more sources
Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE
IEEE Transactions on Industry Applications, 1994 A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and ...
A R Hefner, D Y Chen
exaly +2 more sources
A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study [PDF]
MicromachinesA novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner
Song Yuan +8 more
doaj +2 more sources
Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT
Zhongguo dianli, 2022 Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability.
Lei CUI +4 more
doaj +1 more source
Acoustic Emission of Monolithic IGBT Transistors [PDF]
New Trends in Production Engineering, 2018 Abstract Due to the increasing number of applications of power semiconductor devices, more and more attention is being paid to diagnostic methods to determine the condition of working semiconductor components. On the basis of the results of experimental research, a correlation can be observed between the transition between the on/off ...
Artur Bejger +2 more
openaire +1 more source