Results 11 to 20 of about 101,601 (205)
Efficient Control of IGBT Transistor as Part of Overvoltage Protection
IJEEC - INTERNATIONAL JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTING, 2017 The paper analyzes the phenomena of appearance of overvoltage during the switching-off of the IGBT transistor which arecaused by the presence of parasitic inductance in the switching circuit. This problem can be solved in two ways – by preventing thecause of the overvoltage, or by limiting the overvoltage level.
Nenad Jovančić +2 more
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Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
IET Circuits, Devices and Systems, 2021 This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
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Experimental investigations of monolithic IGBT transistor acoustic emission phenomena [PDF]
ITM Web of Conferences, 2019 Many recent researches are focused on the diagnostic methods allowing determination of the condition of working semiconductor components (power transistors, diodes etc.). As any solid material under stresses (mechanical, temperature and electrical) the semiconductors are generating elastic waves in the case of changing conductivity state.
Kozak Maciej, Gordon Radosław
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Prognostics for electronics components of avionics - NASA IGBT accelerated ageing case study [PDF]
, 2013 Insulate gate bipolar transistors (IGBTs) are widely used in electric vehicles, railway locomotive and new generation aircrafts, due to the IGBTs have advantages in small conduction resistance and small drive current.
Xie, Yuan'an
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DESIGN OF HIGH-SPEED IGBT DEVICE
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar
I. Yu. Lovshenko +3 more
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IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
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Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling
Micromachines, 2022 With the increase of power level and integration in electric vehicle controllers, the heat flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its physical limit.
Lipeng Tan +5 more
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Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T. +12 more
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Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
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Controlling electrical circuit of electric motor on igbt transistors
Electrical Engineering and Power Engineering, 2023 Purpose. Development and analysis of the operation of an electrical circuit for controlling a 700 W direct current electric motor using a contactor on IGBT transistors for operation in diesel locomotives. Methodology. Analytical and computational methods for developing and analyzing the operation of an electrical circuit using a contactor on IGBT ...
Shishkin, I., Lushchin, Sergii
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