Results 11 to 20 of about 12,526 (222)
Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules. [PDF]
Micromachines (Basel)With the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Liu P, Deng Y.
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IGBT Overcurrent Capabilities in Resonant Circuits. [PDF]
Sensors (Basel)The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems.
Al-Hadithi BM, Jimenez M.
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Energies, 2020 This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode.
Paweł Górecki, Krzysztof Górecki
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INVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS
Mokslas - Lietuvos ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.
Bleizgys, Vytautas, Platakis, Andrius
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A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer. [PDF]
Micromachines (Basel), 2023 A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Wang Z, Yang C, Huang X.
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Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)
IEEE Journal of the Electron Devices Society, 2017 A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region. The mechanism of the EI-IGBT is that electrons are injected in both OFF- and ON-state, thus accelerated electron-hole recombination is achieved, resulting in a fast turn-off process. Meanwhile, a
Wanjun Chen +10 more
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A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study [PDF]
Micromachines (Basel)A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner
Yuan S +8 more
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Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT
Zhongguo dianli, 2022 Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability.
Lei CUI +4 more
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Acoustic Emission of Monolithic IGBT Transistors [PDF]
New Trends in Production Engineering, 2018 Abstract Due to the increasing number of applications of power semiconductor devices, more and more attention is being paid to diagnostic methods to determine the condition of working semiconductor components. On the basis of the results of experimental research, a correlation can be observed between the transition between the on/off ...
Artur Bejger +2 more
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Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
IET Circuits, Devices and Systems, 2021 This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
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