Results 11 to 20 of about 715 (178)
IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
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Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling
Micromachines, 2022 With the increase of power level and integration in electric vehicle controllers, the heat flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its physical limit.
Lipeng Tan +5 more
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Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter
Micromachines, 2023 In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics.
Wei Wu +5 more
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Energies, 2020 State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
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Failure precursors for insulated gate bipolar transistors (IGBTs) [PDF]
9th International Seminar on Power Semiconductors (ISPS 2008), 2008 Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and ...
N. Patil, D. Das, K. Goebel, M. Pecht
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Controlling electrical circuit of electric motor on igbt transistors
Electrical Engineering and Power Engineering, 2023 Purpose. Development and analysis of the operation of an electrical circuit for controlling a 700 W direct current electric motor using a contactor on IGBT transistors for operation in diesel locomotives. Methodology. Analytical and computational methods for developing and analyzing the operation of an electrical circuit using a contactor on IGBT ...
Shishkin, I., Lushchin, Sergii
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Research on Residual Life of IGBT Module on EMU in Advanced Repair Based on Power Cycles
Kongzhi Yu Xinxi Jishu, 2023 The insulated gate bipolar transistor (IGBT) module is one of the weakest links in the traction converter system. Accurate life and reliability assessment of the IGBT module is particularly important for safe operation of the traction converter system ...
JIANG Jie, LI Nan
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Shanghai Jiaotong Daxue xuebao, 2023 In order to improve the accuracy of remaining useful life (RUL) prediction of insulated gate bipolar transistor(IGBT) modules across working conditions to enhance their reliability, an RUL prediction method based on the ProbSparse self-attention ...
ZHONG Zhiwei, WANG Yuxiang, HUANG Yixiang, XIAO Dengyu, XIA Pengcheng, LIU Chengliang
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Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
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Micromachines, 2023 A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
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