Results 21 to 30 of about 101,601 (205)
Energies, 2020 State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri +3 more
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Research on Residual Life of IGBT Module on EMU in Advanced Repair Based on Power Cycles
Kongzhi Yu Xinxi Jishu, 2023 The insulated gate bipolar transistor (IGBT) module is one of the weakest links in the traction converter system. Accurate life and reliability assessment of the IGBT module is particularly important for safe operation of the traction converter system ...
JIANG Jie, LI Nan
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Micromachines, 2023 A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
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A method for predicting IGBT junction temperature under transient condition [PDF]
, 2008 In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device.
Putrus, G. A. +6 more
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Shanghai Jiaotong Daxue xuebao, 2023 In order to improve the accuracy of remaining useful life (RUL) prediction of insulated gate bipolar transistor(IGBT) modules across working conditions to enhance their reliability, an RUL prediction method based on the ProbSparse self-attention ...
ZHONG Zhiwei, WANG Yuxiang, HUANG Yixiang, XIAO Dengyu, XIA Pengcheng, LIU Chengliang
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Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
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Aging Prediction of IGBT Based on Improved Support Vector Regression
Zhongguo dianli, 2022 In order to accurately predict the aging state of insulated gate bipolar transistor (IGBT), a novel IGBT aging prediction method is proposed based on improved whale optimization algorithm (IWOA) and optimized support vector regression (SVR).
Zhengxiong CHEN +2 more
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Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) [PDF]
, 2009 Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal.
Bakhtiar, Ahmad
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Energies, 2020 In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
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Analysis of junction capacitance characteristics of trench gate IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance ...
Wang Bo
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