Results 21 to 30 of about 106,588 (158)
Research on Residual Life of IGBT Module on EMU in Advanced Repair Based on Power Cycles
Kongzhi Yu Xinxi Jishu, 2023 The insulated gate bipolar transistor (IGBT) module is one of the weakest links in the traction converter system. Accurate life and reliability assessment of the IGBT module is particularly important for safe operation of the traction converter system ...
JIANG Jie, LI Nan
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Shanghai Jiaotong Daxue xuebao, 2023 In order to improve the accuracy of remaining useful life (RUL) prediction of insulated gate bipolar transistor(IGBT) modules across working conditions to enhance their reliability, an RUL prediction method based on the ProbSparse self-attention ...
ZHONG Zhiwei, WANG Yuxiang, HUANG Yixiang, XIAO Dengyu, XIA Pengcheng, LIU Chengliang
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Micromachines, 2023 A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large ...
Zhigang Wang, Chong Yang, Xiaobing Huang
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Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
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Aging Prediction of IGBT Based on Improved Support Vector Regression
Zhongguo dianli, 2022 In order to accurately predict the aging state of insulated gate bipolar transistor (IGBT), a novel IGBT aging prediction method is proposed based on improved whale optimization algorithm (IWOA) and optimized support vector regression (SVR).
Zhengxiong CHEN +2 more
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Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Engineering, 2015 Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Guoyou Liu, Rongjun Ding, Haihui Luo
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Energies, 2020 In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
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Analysis of junction capacitance characteristics of trench gate IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance ...
Wang Bo
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Моделирование технологии формирования структуры IGBT транзистора [PDF]
, 2010 IGBT-транзистор (англ. Insulated Gate Bipolar Transistor — биполярный транзистор с изолированным затвором) представляет собой силовой электронный прибор, предназначенный в основном, для управления электрическими приводами. Выпускаются как отдельные IGBT,
Шелибак, И. М.
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