Results 21 to 30 of about 715 (178)
Aging Prediction of IGBT Based on Improved Support Vector Regression
Zhongguo dianli, 2022 In order to accurately predict the aging state of insulated gate bipolar transistor (IGBT), a novel IGBT aging prediction method is proposed based on improved whale optimization algorithm (IWOA) and optimized support vector regression (SVR).
Zhengxiong CHEN +2 more
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Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Engineering, 2015 Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Guoyou Liu, Rongjun Ding, Haihui Luo
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Energies, 2020 In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
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Analysis of junction capacitance characteristics of trench gate IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance ...
Wang Bo
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Detection and Recording of Acoustic Emission in Discrete IGBT Transistors [PDF]
Multidisciplinary Aspects of Production Engineering, 2018 Abstract The article presents the results of experimental research, which is to show a correlation between the change of operating status of single IGBT transistor and its acoustic emission. Sensor signal was obtained with oscilloscope in order to further process it digitally and determine possibility of the damage to the element based ...
Radosław Gordon, Andrzej Dreas
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Micromachines, 2022 The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient,
Ibrahim A. S. Abdalgader +2 more
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Efficient Control of IGBT Transistor as Part of Overvoltage Protection
IJEEC - INTERNATIONAL JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTING, 2017 The paper analyzes the phenomena of appearance of overvoltage during the switching-off of the IGBT transistor which arecaused by the presence of parasitic inductance in the switching circuit. This problem can be solved in two ways – by preventing thecause of the overvoltage, or by limiting the overvoltage level.
Nenad Jovančić +2 more
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Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors
Case Studies in Thermal Engineering, 2019 In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du +4 more
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A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules
Energy Reports, 2023 Thermal interface materials (TIMs), as important materials for heat dissipation of insulated gate bipolar transistor (IGBT) modules, degrade under long-term thermal cycling, resulting in elevated junction temperatures and threatening the safe operation ...
Xiaotong Zhang +5 more
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