Results 41 to 50 of about 12,526 (222)
Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
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Aging Prediction of IGBT Based on Improved Support Vector Regression
Zhongguo dianli, 2022 In order to accurately predict the aging state of insulated gate bipolar transistor (IGBT), a novel IGBT aging prediction method is proposed based on improved whale optimization algorithm (IWOA) and optimized support vector regression (SVR).
Zhengxiong CHEN +2 more
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Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply [PDF]
, 2017 A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it
Bikorimana, Jean Marie Vianney +1 more
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Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Engineering, 2015 Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Guoyou Liu, Rongjun Ding, Haihui Luo
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Energies, 2020 In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
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Analysis of junction capacitance characteristics of trench gate IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance ...
Wang Bo
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Current sharing control strategy for IGBTs connected in parallel [PDF]
, 2016 This work focuses on current sharing between punch-through insulated gate bipolar transistors (IGBTs) connected in parallel and evaluates the mechanisms that allow overall current balancing. Two different control strategies are presented.
Pérez Delgado, Raul +2 more
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Micromachines, 2022 The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient,
Ibrahim A. S. Abdalgader +2 more
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Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation [PDF]
Transport and Telecommunication Journal, 2015 Abstract The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed.
Krainyukov Alexander, Kutev Valery
openaire +2 more sources