Results 41 to 50 of about 101,601 (205)
IGBT Dynamic Loss Reduction through Device Level Soft Switching
Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications.
Lan Ma +4 more
doaj +1 more source
Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs
The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
doaj +1 more source
ABSTRACT Amid the ongoing global energy transition, the short‐circuit ratios of AC power grids are continuously decreasing. Grid‐forming voltage source converter‐based high voltage direct current transmission (GFM VSC‐HVDC) systems have therefore come to the forefront of attention.
Cheng Peng +7 more
wiley +1 more source
A Novel Hybrid-Collector Tunneling IGBT With Enhanced Operating Temperature
In this work, a novel Hybrid-Collector Tunneling IGBT (HCT-IGBT) structure is designed and investigated by TCAD simulation. With an integrated N-well region within the P-type collector and an extra N-type heavily doped tunneling layer under the field ...
Chang-Hao Wang +5 more
doaj +1 more source
Application Status and Development Trends of DC Ice‐Melting Devices in China's Power Grid
This paper summarises the development history and engineering application status of DC ice‐melting devices (DCIMD) in China, analyses the principles, advantages, disadvantages and adaptability of mainstream topologies and discusses the key problems and corresponding improvement directions.
Ming Lei +6 more
wiley +1 more source
A Simplified Spice Model for IGBT
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
A. Haddi +4 more
doaj +1 more source
Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
doaj +1 more source
The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT) [PDF]
The effects of neutrons on the operating characteristics of Insulated Gate Bipolar Transistors (IGBT) are described. Experimental results are presented for devices that have been irradiated up to a fluence of 1013 neutrons/cm2, and an analytical model is presented which explains the observed effects. It is found that the on-state voltage increases, the
Hefner, A. R. +2 more
openaire +1 more source
ABSTRACT Induction motors (IMs) are widely used in industry for their robustness and cost‐effectiveness, yet their nonlinear and multivariable dynamics pose significant challenges for high‐performance speed control. Model Predictive Control (MPC) is a well‐established solution but suffers from limitations related to model accuracy and parameter ...
Asier del Rio +4 more
wiley +1 more source
SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm
The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power.
Mohamed Baghdadi +3 more
doaj +1 more source

