Results 61 to 70 of about 715 (178)

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

Energies, 2020
A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang, Baikui Li, Zheyang Zheng, Xi Tang, Jin Wei   +4 more
doaj   +1 more source

Impact of Virtual Inertia Frequency Regulation Control on Junction Temperature of Machine‐Side Converter in Doubly‐Fed Induction Generator

Electronics Letters, Volume 62, Issue 1, January/December 2026.
The increase of the drop coefficient and the virtual inertia coefficient will aggravate the junction temperature fluctuation, and the drop coefficient has a greater influence than the virtual inertia coefficient. ABSTRACT In this letter, we investigate the influence of virtual inertia frequency regulation control on the junction temperature of a ...
Zhou Zhiting, Li Hui, Zhen‐nan Fan
wiley   +1 more source

DESIGN OF HIGH-SPEED IGBT DEVICE

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar
I. Yu. Lovshenko, V. R. Stempitsky, A. S. Turtsevich, I. .. Shelibak   +3 more
doaj  

An Open Access Database of Power Diode Characteristics at Cryogenic Temperature

IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.
The development of power electronic converters operating at cryogenic temperatures is limited by the lack of data on electronic components outside the standard temperature range specified by manufacturers (typically above −65°C, i.e., 208 K). To fill this gap, the construction of an open access database of power electronic component characteristics at ...
Yasmine Baazizi, Ana Luiza Haas Bezerra, Alma Lemansour, Lauro Ferreira, Simon Meunier, Tanguy Phulpin, Loïc Quéval   +6 more
wiley   +1 more source

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky   +2 more
doaj  

Fault Diagnosis Methods Based on Fuzzy Logic and Artificial Neural Networks Approaches for Wind Turbine PWM Inverter

IET Electric Power Applications, Volume 20, Issue 1, January/December 2026.
This study explores fault diagnosis methods for PWM inverters in a wind energy conversion system using a doubly fed induction generator. Two intelligent diagnostic techniques, fuzzy resonant logic and artificial neural networks, are proposed. The fuzzy logic method monitors inverter faults in real time, whereas the neural network method uses 3D feature
Sakina Aoun, Laatra Yousfi, Abla Bouguerne, Aziz Boukadoum, Moussa Sedraoui, Molu Reagan Jean Jacques, Faris H. Alotaibi, Sherif S. M. Ghoneim   +7 more
wiley   +1 more source

Recent Advances in Hybrid, Plug‐In, Battery, and Fuel Cell EVs: Control Schemes, Modes, Converter Topologies, and Pros and Cons

IET Electrical Systems in Transportation, Volume 2026, Issue 1, 2026.
Direct current (DC)–DC converters are the backbone of electric vehicle (EV) power trains, enabling efficient and bidirectional energy flow between the battery, high‐voltage (HV) DC link, and auxiliary rails under tight isolation, gain, ripple, and electromagnetic interference (EMI) constraints.
Abhilash Sakhare, Suresh Mikkili, Praveen Kumar Bonthagorla, Fabio Crescimbini   +3 more
wiley   +1 more source

A new symmetric modular eleven‐level inverter using single and double source unit for low voltage applications with reduced number of switches

IET Power Electronics, Volume 19, Issue 1, January/December 2026.
This study introduces a new modular multilevel inverter that can produce five levels of positive voltage using only six power switches and five DC voltage sources. The basic unit is composed of a single‐ and double‐source (SDS) unit. SDS reduces the number of power electronic components, such as the insulated gate bipolar transistors, freewheeling ...
Naser Fakhri, Sara Laali, Mohammad Salay Naderi, Hossein Rahimi, Saeid Gholami Farkoush   +4 more
wiley   +1 more source

Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT

Eletrônica de Potência
The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost.
Pedro H. G. Vilela , Edmar F. Cota, Heverton A. Pereira, Tomás P. Corrêa, Allan F. Cupertino   +4 more
doaj   +1 more source

A 3D Thermal Network Model for Monitoring Imbalanced Thermal Distribution of Press-Pack IGBT Modules in MMC-HVDC Applications

Energies, 2019
In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Yao Chang, Wuhua Li, Haoze Luo, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg, Weixing Lin   +6 more
doaj   +1 more source