Results 61 to 70 of about 12,526 (222)
Radio Science, Volume 61, Issue 4, April 2026.Abstract A novel switch‐based Active‐Neutral‐Clamped (ANPC) inverter for low DC‐link voltage is presented in this paper. The proposed ANPC topology minimizes switches and achieves 1.5 times better voltage gain than standard inverters. The main objective of this design is to reduce active switches in the inverter to increase system efficiency.
Shujaat Ali +5 more
wiley +1 more source
Multiterminal High‐Voltage Direct Current Projects: A Comprehensive Assessment and Future Prospects
High Voltage, Volume 11, Issue 2, Page 317-344, April 2026.ABSTRACT Multiterminal high‐voltage direct current (MT‐HVDC) systems are an important part of modern power systems, addressing the need for bulk power delivery and efficient renewable energy integration. This paper provides a comprehensive overview of recent advances in MT‐HVDC technology, including launched projects and ongoing initiatives.
Mohammad Hossein Mousavi +3 more
wiley +1 more source
Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module
Fracture and Structural Integrity, 2020 Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices.
Dianhao Zhang +3 more
doaj +1 more source
Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Zhongguo dianli, 2023 Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
doaj +1 more source
Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior [PDF]
, 2017 Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields.
Corfield, Martin +3 more
core +1 more source
Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development
, 1992 A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing ...
Gilbert, P.V., Neudeck, G.W.
openaire +2 more sources
Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE
Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 1994 A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and ...
Mitter, C. S. +3 more
openaire +1 more source
High Voltage, Volume 11, Issue 2, Page 522-533, April 2026.ABSTRACT Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at the interface of silicone gel/ceramic substrates.
Chuang Zhang +7 more
wiley +1 more source
SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm
Journal of Electrical and Computer Engineering, 2021 The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power.
Mohamed Baghdadi +3 more
doaj +1 more source
An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains [PDF]
, 2014 Voltage sourced converters (VSCs) in electric vehicle (EV) drive-trains are conventionally implemented by silicon Insulated Gate Bipolar Transistors (IGBTs) and p-i-n diodes.
Alatise, Olayiwola M. +4 more
core +3 more sources