Results 61 to 70 of about 106,588 (158)
Screening study on high power IGBT [PDF]
International Journal for Simulation and Multidisciplinary Design Optimization, 2010 This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications.
Karama M., Rabier F.
doaj +1 more source
Optimization of Energy Efficiency in Photovoltaic Water Pumping Systems Using Neural Networks
Energy Science &Engineering, Volume 14, Issue 4, Page 2153-2181, April 2026.This study investigates an optimal control strategy for a photovoltaic (PV) water pumping system aimed at improving efficiency and autonomy in off‐grid applications. The system uses an induction motor with direct torque control and compares three maximum power point tracking (MPPT) techniques: neural network–based MPPT, Incremental Conductance (IC ...
Sihem Ghoudelbourk +3 more
wiley +1 more source
Weibull‐Neural Network Framework for Wind Turbine Lifetime Monitoring and Disturbance Identification
Wind Energy, Volume 29, Issue 4, April 2026.ABSTRACT Wind turbines are vital for sustainable energy, yet their reliability under diverse operational and environmental conditions remains a challenge, often leading to costly failures. This study presents a novel Weibull‐Neural Network Framework to enhance wind turbine lifetime monitoring by estimating reliability (R(t)) and mean residual life (MRL)
Fatemeh Kiadaliry +2 more
wiley +1 more source
机车电传动, 2014 Three IGBT short circuit types had been introduced. The short circuit type 2 had been enhanced through optimization of theIGBT transistor gain to withstand higher short circuit current.
LIU Guo-you +5 more
doaj
Radio Science, Volume 61, Issue 4, April 2026.Abstract A novel switch‐based Active‐Neutral‐Clamped (ANPC) inverter for low DC‐link voltage is presented in this paper. The proposed ANPC topology minimizes switches and achieves 1.5 times better voltage gain than standard inverters. The main objective of this design is to reduce active switches in the inverter to increase system efficiency.
Shujaat Ali +5 more
wiley +1 more source
DESIGN OF HIGH-SPEED IGBT DEVICE
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar
I. Yu. Lovshenko +3 more
doaj
Multiterminal High‐Voltage Direct Current Projects: A Comprehensive Assessment and Future Prospects
High Voltage, Volume 11, Issue 2, Page 317-344, April 2026.ABSTRACT Multiterminal high‐voltage direct current (MT‐HVDC) systems are an important part of modern power systems, addressing the need for bulk power delivery and efficient renewable energy integration. This paper provides a comprehensive overview of recent advances in MT‐HVDC technology, including launched projects and ongoing initiatives.
Mohammad Hossein Mousavi +3 more
wiley +1 more source
Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development [PDF]
, 1992 A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices.
Neudeck, G.W., Gilbert, P.V.
core
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies, 2020 A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
doaj +1 more source
High Voltage, Volume 11, Issue 2, Page 522-533, April 2026.ABSTRACT Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at the interface of silicone gel/ceramic substrates.
Chuang Zhang +7 more
wiley +1 more source