Results 81 to 90 of about 12,526 (222)
Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT [PDF]
, 2018 3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools.
De Souza, M. +4 more
core +1 more source
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This article presents a Fifteen‐level inverter topology that has a lesser number of switches (12) and can accommodate isolated DC sources. The total harmonic elimination (THD) of the proposed topology using genetic algorithm is within the IEEE 519 standards. Further, the fifteen‐level inverter is implemented in Hardware and firing pulses were generated
Yogesh Joshi +4 more
wiley +1 more source
Field Programmable Gate Arrays Usage in Industrial Automation Systems [PDF]
, 2016 Tato disertační práce se zabývá využitím programovatelných hradlových polí (FPGA) v diagnostice měničů, využívajících spínaných IGBT tranzistorů. Je zaměřena na budiče těchto výkonových tranzistorů a jejich struktury. Přechodné jevy veličin, jako jsou IG,
Nouman, Ziad
core
IET Power Electronics, Volume 19, Issue 1, January/December 2026.The multisource adaptive fusion CNN‐transformer method proposed in this study can provide theoretical and technical support for fault diagnosis of high‐voltage MCHBI. It has a promising potential for engineering applications. Abstract In high‐voltage applications, the number of cascaded H‐bridge inverter units is large, the failure probability ...
Weiman Yang +4 more
wiley +1 more source
DESIGN OF HIGH-SPEED IGBT DEVICE
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar
I. Yu. Lovshenko +3 more
doaj
Screening study on high power IGBT [PDF]
International Journal for Simulation and Multidisciplinary Design Optimization, 2010 This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications.
Karama M., Rabier F.
doaj +1 more source
Estimation on the switching losses at IGBT bridges power converter [PDF]
, 2011 . In the paper estimation on the switching losses at IGBT bridge converter with the output serial resonant load is given. The converter works on frequency higher than resonant frequency and supports the work of IGBT transistors in the bridge with zero ...
Cundev, Dobri +2 more
core
Prediction of Short-Circuit-Related Thermal Stress in Aged IGBT Modules [PDF]
, 2016 In this paper, the thermal stress on bond wires of aged IGBT modules under short-circuit conditions has been studied with respect to different solder delamination levels.
Bahman, Amir Sajjad +4 more
core +2 more sources
IET Power Electronics, Volume 19, Issue 1, January/December 2026.This paper proposes a modelling method based on multi‐software co‐simulation to precisely model radiated interference in permanent magnet servo drive systems. The accuracy of the simulation model is validated through comparison with actual measurement results. ABSTRACT High‐frequency switching operations of power switching tubes generate high‐frequency
Jingxuan He +7 more
wiley +1 more source
A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies, 2020 A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
doaj +1 more source