Results 81 to 90 of about 106,588 (158)

ANALISIS PERBANDINGAN KINERJA H-BRIDGE DRIVER MENGGUNAKAN IGBT DAN MOSFET PADA SISTEM KEMUDI STEER BY WIRE [PDF]

open access: yes, 2018
Steer By Wire (SBW) adalah teknologi sistem kemudi terbaru yang menerapkan konsep independen dan full electronic control. Hal ini menyebabkan sistem SBW dapat menghasilkan pengemudian yang lebih responsive, akurat, dan aman bagi pengemudi.
Prasetyo, Yusuf Eko   +3 more
core   +1 more source

Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid $p^{{+}}/{n}$ Collector Structure

open access: yesIEEE Journal of the Electron Devices Society, 2019
A trench-gate field stop insulated gate bipolar transistor (TFS-IGBT) with a novel hybrid p+/n collector structure is proposed to enhance the trade-off relationship between the on-state voltage drop (Von) and the turn-off energy loss (Eoff). The proposed
Kui Ma, Weijia Zhang, Wai Tung Ng
doaj   +1 more source

FAULT DETECTION AND PROGNOSTICS OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) USING A K-NEAREST NEIGHBOR CLASSIFICATION ALGORITHM [PDF]

open access: yes, 2013
Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device commonly used in medium to high power applications from household appliances, automotive, and renewable energy.
Sutrisno, Edwin
core   +1 more source

An online extraction method of junction temperature in IGBT devices with saturation voltage drop

open access: yes机车电传动, 2023
The junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability
WANG Zequn   +3 more
doaj  

3.3 kV PT-IGBT with voltage-sensor monolithically integrated

open access: yes, 2015
An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV-50
Hevia, D.F.   +3 more
core   +1 more source

A new analytical IGBT model with improved electrical characteristics

open access: yes, 1999
A new analytical insulated gate bipolar transistor (IGBT) model for improved on-state characteristics prediction is proposed. Two-dimensional (2-D) effects in the forward conduction of an IGBT are studied analytically.
Sheng, Kuang   +2 more
core  

Insulated gate bipolar transistor (IGBT) simulation using IG-Spice

open access: yes, 2010
A physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice.
Mitter, Chang Su
core  

Modeling of IGBT resistive and inductive turn-on behavior

open access: yes, 2008
Although insulated-gate bipolar-transistor (IGBT) turn-on losses can be comparable to turn-off losses, IGBT turn-on has not been as thoroughly studied in the literature.
Santi, E. (Enrico)   +10 more
core   +1 more source

Evaluation of the power loss in IGBT single transistor device under the condition of pulse duration of 100 ns

open access: yes
The improvement in the reliability and lifespan of insulated gate bipolar transistor (IGBT) devices and the enhancement of system efficiency under high-frequency pulse conditions are receiving increasingly wide attention, and all of these are closely ...
Zicheng Zhang   +4 more
core   +1 more source

Laboratory test equipment for IGBT transistors

open access: yes, 2009
This master’s thesis describes the function and realization of the laboratory test equipment designed for measuring and analysing of collector current iC and voltage uCE courses during the opening and closing process of a power IGBT transistor.
Chvátlina, Pavel
core  

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