Results 71 to 80 of about 715 (178)
STUDY ON THE OPTIMIZATION OF IGBT THERMAL MANAGEMENT FOR PTC HEATER [PDF]
Journal of Engineering Science and Technology, 2015 It is essential to optimize HVAC (Heating, Ventilation and Air-Conditioning) system for a thermal plant or an electric vehicle since it has a significant effect on the thermal efficiency.
J. W. JEONG, Y. L. LEE
doaj
Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid
IEEE Journal of the Electron Devices Society, 2019 A trench-gate field stop insulated gate bipolar transistor (TFS-IGBT) with a novel hybrid p+/n collector structure is proposed to enhance the trade-off relationship between the on-state voltage drop (Von) and the turn-off energy loss (Eoff). The proposed
Kui Ma, Weijia Zhang, Wai Tung Ng
doaj +1 more source
An online extraction method of junction temperature in IGBT devices with saturation voltage drop
机车电传动, 2023 The junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability
WANG Zequn +3 more
doaj
Study of MOS and IGBT transistors at switching with variable duty cycle
Journal of Physics: Conference SeriesAbstract In this paper, the functionality of MOS and IGBT transistors is examined under identical working conditions, both in terms of command frequency and load circuit. A variable duty cycle and variable frequency signal generator is used to control transistors. Various electronic components and Arduino-UNO modules, as well as the 16×2
C D Cunţan, I Baciu, M Osaci
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CSEE Journal of Power and Energy SystemsIn a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled ...
Lubin Han, Lin Liang, Yong Kang
doaj +1 more source
Research on the Press-pack IGBT with High SCSOA
Kongzhi Yu Xinxi Jishu, 2017 DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing +5 more
doaj
750 A/6 500 V High Power Density IGBT Module for Rail Transit Application
机车电传动, 2016 Low loss is the key for high voltage Insulated Gate Bipolar Transistor (IGBT) design and manufacture. Based on "U"- shape enhanced double diffused metal oxide semiconductor(DMOS+) cell structure, enhanced controllable punch through(CPT+), variation of ...
LIU Guoyou +4 more
doaj
Журнал нано- та електронної фізики, 2015 The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed.
Murashev, V.N. +6 more
openaire +2 more sources
Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]
Micromachines (Basel)Yang HC +4 more
europepmc +1 more source
Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]
Sci RepAbdelali K +4 more
europepmc +1 more source