Results 51 to 60 of about 12,526 (222)
Detection and Recording of Acoustic Emission in Discrete IGBT Transistors [PDF]
Multidisciplinary Aspects of Production Engineering, 2018 Abstract The article presents the results of experimental research, which is to show a correlation between the change of operating status of single IGBT transistor and its acoustic emission. Sensor signal was obtained with oscilloscope in order to further process it digitally and determine possibility of the damage to the element based ...
Radosław Gordon, Andrzej Dreas
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Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors
Case Studies in Thermal Engineering, 2019 In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du +4 more
doaj +1 more source
Optimization of Energy Efficiency in Photovoltaic Water Pumping Systems Using Neural Networks
Energy Science &Engineering, Volume 14, Issue 4, Page 2153-2181, April 2026.This study investigates an optimal control strategy for a photovoltaic (PV) water pumping system aimed at improving efficiency and autonomy in off‐grid applications. The system uses an induction motor with direct torque control and compares three maximum power point tracking (MPPT) techniques: neural network–based MPPT, Incremental Conductance (IC ...
Sihem Ghoudelbourk +3 more
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Structural Features and Recent Progress of Super Junction IGBT
机车电传动, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj
IGBT Dynamic Loss Reduction through Device Level Soft Switching
Energies, 2018 Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications.
Lan Ma +4 more
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A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules
Energy Reports, 2023 Thermal interface materials (TIMs), as important materials for heat dissipation of insulated gate bipolar transistor (IGBT) modules, degrade under long-term thermal cycling, resulting in elevated junction temperatures and threatening the safe operation ...
Xiaotong Zhang +5 more
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Design and implementation of 30kW 200/900V LCL modular multilevel based DC/DC converter for high power applications [PDF]
, 2016 This paper presents the design, development and testing of a 30kW, 200V/900V modular multilevel converter (MMC) based DC/DC converter prototype. An internal LCL circuit is used to provide voltage stepping and fault tolerance property.
Aboushady, A. +3 more
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Weibull‐Neural Network Framework for Wind Turbine Lifetime Monitoring and Disturbance Identification
Wind Energy, Volume 29, Issue 4, April 2026.ABSTRACT Wind turbines are vital for sustainable energy, yet their reliability under diverse operational and environmental conditions remains a challenge, often leading to costly failures. This study presents a novel Weibull‐Neural Network Framework to enhance wind turbine lifetime monitoring by estimating reliability (R(t)) and mean residual life (MRL)
Fatemeh Kiadaliry +2 more
wiley +1 more source
A Simplified Spice Model for IGBT
Active and Passive Electronic Components, 1998 A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
A. Haddi +4 more
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Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs
Crystals, 2020 The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
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