Results 51 to 60 of about 715 (178)
Experimental investigations of monolithic IGBT transistor acoustic emission phenomena [PDF]
Many recent researches are focused on the diagnostic methods allowing determination of the condition of working semiconductor components (power transistors, diodes etc.). As any solid material under stresses (mechanical, temperature and electrical) the semiconductors are generating elastic waves in the case of changing conductivity state.
Kozak Maciej, Gordon Radosław
openaire +2 more sources
Abstract A novel switch‐based Active‐Neutral‐Clamped (ANPC) inverter for low DC‐link voltage is presented in this paper. The proposed ANPC topology minimizes switches and achieves 1.5 times better voltage gain than standard inverters. The main objective of this design is to reduce active switches in the inverter to increase system efficiency.
Shujaat Ali +5 more
wiley +1 more source
Multiterminal High‐Voltage Direct Current Projects: A Comprehensive Assessment and Future Prospects
ABSTRACT Multiterminal high‐voltage direct current (MT‐HVDC) systems are an important part of modern power systems, addressing the need for bulk power delivery and efficient renewable energy integration. This paper provides a comprehensive overview of recent advances in MT‐HVDC technology, including launched projects and ongoing initiatives.
Mohammad Hossein Mousavi +3 more
wiley +1 more source
Screening study on high power IGBT [PDF]
This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications.
Karama M., Rabier F.
doaj +1 more source
ABSTRACT Because of the harsh serving conditions of insulated gate bipolar transistor (IGBT) packaged by silicone gel with high voltage and high frequency, it is crucial to reveal the developing characteristics and inhibiting method of discharged degradation at the interface of silicone gel/ceramic substrates.
Chuang Zhang +7 more
wiley +1 more source
IGBTs: Concept, Development and New Structures
The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Under identical conditions, we benchmark PID against Fuzzy‐Logic control for a single‐phase H‐bridge inverter. FLC achieves faster rise/settling with lower THD and better disturbance rejection than tuned PID while requiring explicit rule design—offering a reproducible baseline and deployment guidance for power‐quality‐constrained inverter applications.
Baraa Taha +4 more
wiley +1 more source
Three IGBT short circuit types had been introduced. The short circuit type 2 had been enhanced through optimization of theIGBT transistor gain to withstand higher short circuit current.
LIU Guo-you +5 more
doaj
Beyond Conventional Cooling: Advanced Micro/Nanostructures for Managing Extreme Heat Flux
This review examines the design, application, and manufacturing of biomimetic or engineered micro/nanostructures for managing high heat‐flux in multi‐level electronics by enhancing conductive, convective, phase‐changing, and radiative heat transfer mechanisms, highlighting their potential for efficient, targeted thermal management, and future prospects.
Yuankun Zhang +7 more
wiley +1 more source
A Hybrid Ultra‐High Voltage DC Transformer With Digital Twin‐Driven Operation and Control
This study introduces a digital twin‐driven hybrid ultra‐high‐voltage DC transformer (UHVDCT) that combines high‐capacity LCCs with low‐capacity MMCs at the UHV side. This innovative topology reduces MMC requirements by 32.9% while ensuring stable power flow and dynamic reactive balance through real‐time virtual‐physical synchronization.
Ling Xu +6 more
wiley +1 more source

