Results 51 to 60 of about 106,588 (158)
Application Status and Development Trends of DC Ice‐Melting Devices in China's Power Grid
IET Smart Energy Systems, Volume 2, Issue 3, Page 171-180, September 2026.This paper summarises the development history and engineering application status of DC ice‐melting devices (DCIMD) in China, analyses the principles, advantages, disadvantages and adaptability of mainstream topologies and discusses the key problems and corresponding improvement directions.
Ming Lei +6 more
wiley +1 more source
Design of IGBT with Integral Freewheeling Diode
, 2002 A new power structure integrating a freewheeling diode in the termination region of a punch-through (PT) insulated gate bipolar transistor (IGBT) is presented.
NAPOLI, ETTORE +5 more
core +1 more source
Engineering Reports, Volume 8, Issue 7, July 2026.This study designs and simulates a capacitor‐supported dynamic voltage restorer (DVR) using Carrier PWM control to mitigate voltage sags, swells, and distortions in three‐phase distribution systems. The self‐supported DVR employs a DC‐link capacitor as an energy buffer, eliminating external storage needs. Control via Synchronous Reference Frame Theory (
Tamiru Debela Awas +3 more
wiley +1 more source
Thermal stability of IGBT high-frequency operation
, 2000 Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature.
Sheng, Kuang +2 more
core +1 more source
Study on the Switching Time-Variation of Simultaneously Controlled IGBT: Case of Defibrillators Design [PDF]
Bioautomation, 2009 Samples of integrated gain bipolar transistors (IGBT) of the same type but produced under different technologies were tested about the switching time-variation.
Mudrov T., Kostov J.
doaj
A Hybrid EV Charging Architecture Integrating DC Fast Charging and Wireless Power Transfer
Energy Science &Engineering, Volume 14, Issue 6, Page 3013-3027, June 2026.A hybrid EV charging architecture combining DC fast charging and wireless power transfer is proposed. The system achieves high efficiency, grid compliance, and reliable bidirectional operation, offering a scalable solution that enhances user convenience while paving the way for smarter, future‐ready EV charging infrastructure.
Ali Almaktoof +3 more
wiley +1 more source
ПРОЕКТИРОВАНИЕ IGBT-ПРИБОРА ВЫСОКОГО БЫСТРОДЕЙСТВИЯ [PDF]
, 2019 Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar
И. Ю. Ловшенко +7 more
core
Parametric Model Order Reduction by Box Clustering With Applications in Mechatronic Systems
International Journal for Numerical Methods in Engineering, Volume 127, Issue 10, 30 May 2026.ABSTRACT High temperatures and structural deformations can compromise the functionality and reliability of new components for mechatronic systems. Therefore, high‐fidelity simulations (HFS) are employed during the design process, as they enable a detailed analysis of the thermal and structural behavior of the system.
Juan Angelo Vargas‐Fajardo +4 more
wiley +1 more source
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter
Energies, 2017 6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomotive (MCUs) traction converters, to achieve an upper 3.5 kV DC link, which is beneficial for decreasing power losses and increasing the power density ...
Xianjin Huang +4 more
doaj +1 more source