Results 31 to 40 of about 715 (178)
Structural Features and Recent Progress of Super Junction IGBT
机车电传动, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj
IGBT Dynamic Loss Reduction through Device Level Soft Switching
Energies, 2018 Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications.
Lan Ma +4 more
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International Journal of Robust and Nonlinear Control, EarlyView.ABSTRACT Induction motors (IMs) are widely used in industry for their robustness and cost‐effectiveness, yet their nonlinear and multivariable dynamics pose significant challenges for high‐performance speed control. Model Predictive Control (MPC) is a well‐established solution but suffers from limitations related to model accuracy and parameter ...
Asier del Rio +4 more
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Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs
Crystals, 2020 The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
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Application Status and Development Trends of DC Ice‐Melting Devices in China's Power Grid
IET Smart Energy Systems, EarlyView.This paper summarises the development history and engineering application status of DC ice‐melting devices (DCIMD) in China, analyses the principles, advantages, disadvantages and adaptability of mainstream topologies and discusses the key problems and corresponding improvement directions.
Ming Lei +6 more
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A Simplified Spice Model for IGBT
Active and Passive Electronic Components, 1998 A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
A. Haddi +4 more
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SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm
Journal of Electrical and Computer Engineering, 2021 The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power.
Mohamed Baghdadi +3 more
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Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Zhongguo dianli, 2023 Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
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Advanced Control for Applications, Volume 8, Issue 3, September 2026.Schematic diagram of the whale optimization algorithm (WOA)–optimized fuzzy proportional–integral–derivative (PID) controller. The WOA is employed to dynamically tune the scaling factor expressions and fuzzy control parameters (a(e)a(e), a(ec)a(ec), βpβp, βiβi), as well as the initial PID gains (kp0kp0, ki0ki0), based on the error (ee) and its ...
Xiaosong Tian +7 more
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Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module
Fracture and Structural Integrity, 2020 Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices.
Dianhao Zhang +3 more
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