Results 31 to 40 of about 106,588 (158)
The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient,
Ibrahim A. S. Abdalgader +2 more
doaj +1 more source
Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors
In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du +4 more
doaj +1 more source
A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules
Thermal interface materials (TIMs), as important materials for heat dissipation of insulated gate bipolar transistor (IGBT) modules, degrade under long-term thermal cycling, resulting in elevated junction temperatures and threatening the safe operation ...
Xiaotong Zhang +5 more
doaj +1 more source
A Comprehensive Review of Fault‐Current Limiter Technologies for Smart and Resilient Power Systems
This review compares superconducting, solid‐state, and hybrid fault‐current limiters (FCLs) for modern alternating current, direct current, and hybrid grids. It shows that optimal FCL selection depends on fault characteristics, network configuration, voltage level, protection coordination, and resilience requirements rather than on a universally ...
Abdelrahman Farghly +5 more
wiley +1 more source
ABSTRACT Amid the ongoing global energy transition, the short‐circuit ratios of AC power grids are continuously decreasing. Grid‐forming voltage source converter‐based high voltage direct current transmission (GFM VSC‐HVDC) systems have therefore come to the forefront of attention.
Cheng Peng +7 more
wiley +1 more source
A Novel Hybrid-Collector Tunneling IGBT With Enhanced Operating Temperature
In this work, a novel Hybrid-Collector Tunneling IGBT (HCT-IGBT) structure is designed and investigated by TCAD simulation. With an integrated N-well region within the P-type collector and an extra N-type heavily doped tunneling layer under the field ...
Chang-Hao Wang +5 more
doaj +1 more source
Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs
The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
doaj +1 more source
ABSTRACT Voltage source converter‐high‐voltage direct current (VSC‐HVDC) transmission is a key technology for renewable‐energy integration, regional grid interconnection and passive‐network power supply. This review summarises the development history of VSC‐HVDC, the evolution of converter topologies, its technical advantages and representative ...
Licheng Li +7 more
wiley +1 more source
ABSTRACT A new‐type power system serves as a critical technical support for the integration of new energy, and its secure and stable operation is of great importance. However, the extensive utilisation of power electronic devices leads to power equipment insulation being subjected to electrical stresses of high‐frequency harmonics, which can easily ...
Shengtao Li +4 more
wiley +1 more source
Thermal Load Application Method for Temperature Cycle Test of Power Module PP-IGBT
Temperature cycling test is an important test method to study the thermal fatigue aging characteristics of power module press pack insulated gate bipolar transistor (PP-IGBT) devices. Therefore, taking the PP-IGBT of flexible direct converter valve power
Biaojun LI +3 more
doaj +1 more source

