An online extraction method of junction temperature in IGBT devices with saturation voltage drop
机车电传动, 2023 The junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability
WANG Zequn +3 more
doaj
Estudo e implementação de um filtro ativo paralelo monofásico de 8kVA [PDF]
, 2007 Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.O presente trabalho aborda o estudo e a implementação de um filtro ativo paralelo monofásico, utilizado para correção do
Fenili, Murilo de Pieri
core
Моделирование технологии формирования структуры IGBT транзистора [PDF]
, 2010 IGBT-транзистор (англ. Insulated Gate Bipolar Transistor — биполярный транзистор с изолированным затвором) представляет собой силовой электронный прибор, предназначенный в основном, для управления электрическими приводами. Выпускаются как отдельные IGBT,
Шелибак, И. М.
core +1 more source
Predictive diagnosis of IGBT on photovoltaic plants
, 2023 LAUREA MAGISTRALECon la crescente diffusione degli impianti a energia rinnovabile, il transistor bipolare a porta isolata (IGBT) è diventato un componente fondamentale dei sistemi elettronici di potenza.
Villalta Machaca, Giancarlo
core
FAULT DETECTION AND PROGNOSTICS OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) USING A K-NEAREST NEIGHBOR CLASSIFICATION ALGORITHM [PDF]
, 2013 Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device commonly used in medium to high power applications from household appliances, automotive, and renewable energy.
Sutrisno, Edwin
core +1 more source
Study of MOS and IGBT transistors at switching with variable duty cycle
Journal of Physics: Conference SeriesAbstract In this paper, the functionality of MOS and IGBT transistors is examined under identical working conditions, both in terms of command frequency and load circuit. A variable duty cycle and variable frequency signal generator is used to control transistors. Various electronic components and Arduino-UNO modules, as well as the 16×2
C D Cunţan, I Baciu, M Osaci
openaire +1 more source
Paralelismo de inversores de tensão controlados pelo valor médio instanâneo da tensão de saída [PDF]
, 2003 Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico.
Barauna, Allan Pierre
core
Design of IGBT with Integral Freewheeling Diode
, 2002 A new power structure integrating a freewheeling diode in the termination region of a punch-through (PT) insulated gate bipolar transistor (IGBT) is presented.
NAPOLI, ETTORE +5 more
core +1 more source
Influence of IGBT transistor fault in frequency inverter to the performance of the induction motor drive [PDF]
, 2013 This paper presents a influence of IGBT transistor fault to the performance direct field oriented control DFOC and direct torque control DTC-SVM of induction motor drive. Study results of the open-switch fault that were presented, contains an analysis of
Dybkowski, M., Klimkowski, K.
core
Research on the Press-pack IGBT with High SCSOA
Kongzhi Yu Xinxi Jishu, 2017 DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing +5 more
doaj