Research on the Press-pack IGBT with High SCSOA
Kongzhi Yu Xinxi Jishu, 2017 DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing +5 more
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750 A/6 500 V High Power Density IGBT Module for Rail Transit Application
机车电传动, 2016 Low loss is the key for high voltage Insulated Gate Bipolar Transistor (IGBT) design and manufacture. Based on "U"- shape enhanced double diffused metal oxide semiconductor(DMOS+) cell structure, enhanced controllable punch through(CPT+), variation of ...
LIU Guoyou +4 more
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3.3 kV PT-IGBT with voltage-sensor monolithically integrated
An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV-50
Flores D, Urresti J, Hidalgo S, Hevia D
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Thermal/Mechanical Characteristics Simulation Analysis of Solder Layer Damage in IGBT Modules. [PDF]
Micromachines (Basel)Zhou J, Chen J, He L, Tang H, Wu X.
europepmc +1 more source
Improved ASHCPWM with Reduced IGBT Switching Actions and Kalman Filter-Based Zero-Sequence Suppression for Open-End Winding PMSM Drives. [PDF]
Micromachines (Basel)Zhang Y, Qu M, Xie H, Xia Y, Hu L.
europepmc +1 more source
Impact of Printed Circuit Board Dielectric Material on the Thermal Behavior of Wafer-Level Packaging GaN Transistors Used in High-Power-Density Converters for Electric Vehicle Applications. [PDF]
Micromachines (Basel)Belguith M +4 more
europepmc +1 more source
Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]
Micromachines (Basel)Yang HC +4 more
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A Study on Electrical Characteristics Improvement on Field Stop IGBT Using Trench Gate Structure
, 2012 : The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device.
Hun-suk Chung +4 more
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Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]
Sci RepAbdelali K +4 more
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Steady-state analytical model for the trench insulated gate bipolar transistor
, 1995 A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e.
Udrea, F, Amaratunga, GAJ, ,
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