Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects [PDF]
, 2015 An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- μm-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and
Castellazzi, Alberto +3 more
core +2 more sources
Energies, 2019 In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-
Yao Chang +6 more
doaj +1 more source
Reducing switching losses through MOSFET-IGBT combination [PDF]
, 2008 This paper introduces a configuration aimed at switching losses reduction trough a power leg constructed by combining a MOSFET and an IGBT. The combined use of these different switches leads to the turn-on losses reduction trough the use of the faster ...
Marinov, Angel +2 more
core
Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs [PDF]
, 2015 In this paper, benchmark of Si IGBT, SiC MOSFET and GaN HEMT power switches at 600V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter ...
Castellazzi, Alberto, Gurpinar, Emre
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STUDY ON THE OPTIMIZATION OF IGBT THERMAL MANAGEMENT FOR PTC HEATER [PDF]
Journal of Engineering Science and Technology, 2015 It is essential to optimize HVAC (Heating, Ventilation and Air-Conditioning) system for a thermal plant or an electric vehicle since it has a significant effect on the thermal efficiency.
J. W. JEONG, Y. L. LEE
doaj
System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1 [PDF]
Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported.
Alan, Irfan, Lipo, Thomas A.
core +1 more source
Evaluation de la température des composants actifs de puissance [PDF]
, 2017 Les performances et la durée de vie des convertisseurs statiques d’énergie électrique sont liées à la température des composants actifs de puissance. Dans cet article, la définition de cette température et des méthodes pour la mesurer sont expliquées ...
Avenas, Yvan +2 more
core
An online extraction method of junction temperature in IGBT devices with saturation voltage drop
机车电传动, 2023 The junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability
WANG Zequn +3 more
doaj
Diseño de un convertidor elevador continua-continua para aplicaciones fotovoltaicas [PDF]
, 2015 Este trabajo presenta el diseño de un convertidor elevador de corriente continua a corriente continua cuyo objetivo es alimentar la etapa de potencia de un inversor fotovoltaico de dos etapas.
Cadena, Carlos Alberto +2 more
core +1 more source
Silicon device performance measurements to support temperature range enhancement [PDF]
Characterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast
Askew, Ray +5 more
core +1 more source