Results 101 to 110 of about 101,601 (205)

Gas sensing using an organic/silicon hybrid field-effect transistor [PDF]

, 1996
This thesis describes the fabrication and properties of novel organic/silicon hybrid field-effect transistor gas sensors. Whilst most of the work used the emeraldine base form of the conductive polymer polyaniline, the response of a device incorporating ...
Barker, Paul Simon
core  

Soft switching techniques for multilevel inverters [PDF]

, 1998
Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico.
Yuan, Xiaoming
core  

750 A/6 500 V High Power Density IGBT Module for Rail Transit Application

机车电传动, 2016
Low loss is the key for high voltage Insulated Gate Bipolar Transistor (IGBT) design and manufacture. Based on "U"- shape enhanced double diffused metal oxide semiconductor(DMOS+) cell structure, enhanced controllable punch through(CPT+), variation of ...
LIU Guoyou, LUO Haihui, LI Qunfeng, HUANG Jianwei, QIN Rongzhen   +4 more
doaj  

Evaluation of the power loss in IGBT single transistor device under the condition of pulse duration of 100 ns

AIP Advances
The improvement in the reliability and lifespan of insulated gate bipolar transistor (IGBT) devices and the enhancement of system efficiency under high-frequency pulse conditions are receiving increasingly wide attention, and all of these are closely ...
Zenghui Yang, Taizhuang Hu, Diangeng Li, Huibo Zhang, Zicheng Zhang   +4 more
doaj   +1 more source

Investigation of the Irradiation Influence with High-energy Electronson the Electrical Parameters of the IGBT-transistors

Журнал нано- та електронної фізики, 2015
The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed.
Murashev, V.N., Konovalov, M.P., Legotin, S.A., Didenko, S.I., Rabinovich, O.I., Krasnov, A.A., Kuzmina, K.A.   +6 more
openaire   +2 more sources

Insulated gate bipolar transistor (IGBT) simulation using IG-Spice

, 2010
A physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice.
Mitter, Chang Su
core  

Thermal/Mechanical Characteristics Simulation Analysis of Solder Layer Damage in IGBT Modules. [PDF]

Micromachines (Basel)
Zhou J, Chen J, He L, Tang H, Wu X.
europepmc   +1 more source

Impact of Printed Circuit Board Dielectric Material on the Thermal Behavior of Wafer-Level Packaging GaN Transistors Used in High-Power-Density Converters for Electric Vehicle Applications. [PDF]

Micromachines (Basel)
Belguith M, Eloued S, Kadi M, Ben Hadj Slama J, Hamouda M.   +4 more
europepmc   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]

Sci Rep
Abdelali K, Bendjedia B, Rizoug N, Kraiem H, Flah A.   +4 more
europepmc   +1 more source