In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed.
Sheng, Kuang +5 more
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Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]
Zhang H +6 more
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Thermal-Electrical Fusion for Real-Time Condition Monitoring of IGBT Modules in Transportation Systems. [PDF]
Cui M, Liu Y, Hu Z, Shi T.
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Multi-Objective Parameter Optimization Design of Heat Pipe Heat Sink for Bidirectional Power Converter Based on MOEDO Algorithm. [PDF]
Su Z +6 more
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Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]
Kshatri SS +4 more
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Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor. [PDF]
Kang KM, Hu JW, Huang CF.
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Quantum Statistical Behaviors of Carriers in Strong Inversion Layers Associated with Mobility and Threshold Voltage in FinFET Transistors. [PDF]
Yang HC, Chi SC, Yang HY.
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Design and implementation of a novel multilevel inverter for renewable energy applications. [PDF]
Dhanamjayulu C.
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A Quasi-Resonant System for High-Frequency Trans-Spinal Magnetic Stimulation (HF-TSMS). [PDF]
Marturano F +5 more
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Research on the Parasitic Inductance of the Bonding Wires in IGBT Modules Based on Their Morphology and Layout. [PDF]
Cao J +7 more
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