Results 131 to 140 of about 715 (178)

The current gain of bipolar transistor in the IGBT measurement

2000 TENCON Proceedings. Intelligent Systems and Technologies for the New Millennium (Cat. No.00CH37119), 2002
The common emitter current gain (/spl beta//sub 0/) of the bipolar transistor in the IGBT (insulated gate bipolar transistor) structure semiconductor device is measured in this paper. The first step of the measurement is to find the early voltage (V/sub A/) of the device.
J. Parnklang, S. Niemcharoen, S. Yardsamer   +2 more
openaire   +1 more source

Half Bridge Driver for MOSFET and IGBT Transistors

2019 IEEE International Conference on Modern Electrical and Energy Systems (MEES), 2019
the paper deals with the problem of designing a suitable driver for MOSFET and IGBT transistors. The circuit should provide not only sufficient excitation but also galvanic separation of the power and control circuit and should be able to set the optional length of the safety gap when switching the transistors connected in one converter branch.
Dobroslav Kovac, Andrii Gladyr
openaire   +1 more source

The ETO-IGBT—A Dual-Concept of Thyristor and Transistor Power Devices

IEEE Transactions on Industry Applications, 2019
The performance of inverters strongly depends on the characteristics of the employed semiconductor devices. Bound to a trade-off between conduction- and switching-optimization, these devices require a decision for the optimal loss balance. In this work, a new medium-voltage semiconductor device consisting of both thyristor-based and transistor-based ...
Jakob Teichrib, Rik W. De Doncker
openaire   +1 more source

An IGBT and MOSFET gated SiC bipolar junction transistor

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344), 2003
A high voltage 4H-SiC bipolar junction transistor (BJT) has been developed with 16 A, 600 V rating. This paper presents a new base drive structure for the SiC BJT for inverter application. The driver consists of one IGBT and one MOSFET to help turn-on and turn-off of the SiC BJT transistor in a Darlington like configuration.
null Huijie Yu, J. Lai, X. Li, Y. Luo, L. Fursin, J.H. Zhao, P. Alexandrov, B. Wright, M. Weiner   +8 more
openaire   +1 more source

Modeling and characterization of the IGBT electrothermal transistor for circuit applications

Proceedings of the 39th Midwest Symposium on Circuits and Systems, 2002
An analytical model for the power Insulated Gate Bipolar Transistor (IGBT) including electrothermal interactions is developed. In this model the device's temperature becomes an interactive variable during the simulation. The model has been implemented in the Saber circuit simulator.
A. Amimi, R. Bouchakour, T. Maurel, O. Oliaei   +3 more
openaire   +1 more source

A new hybrid SOI LDMOS-IGBT power transistor

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings, 2002
A new hybrid LDMOS-IGBT structure using SOI film is reported. The new device integrates the advantages of SOI technology, the conductivity modulation of IGBT and the high switching speed of DMOSFET.
J. Zeng, P.A. Mawby, M.S. Towers, K. Board   +3 more
openaire   +1 more source

A transient model for insulated gate bipolar transistors (IGBTs)

International Journal of Electronics, 2008
In this paper, we present a physics-based model for the non punch-through (NPT) insulated gate bipolar transistor (IGBT) during transient turn off period. The steady state part of the model is derived from the solution of the ambipolar diffusion equation in the drift region of the NPT IGBT.
Sehwan Ryu, Myungsoo Lee, Mohsen A. Hajji, Hyungkeun Ahn, Deukyoung Han, Mahmoud El Nokali   +5 more
openaire   +1 more source

IGBT transistor switching in a unique industrial application

Proceedings of 5th International Conference on Power Electronics and Variable-Speed Drives, 1994
The paper presents the design, implementation, active protection against fault conditions and test results of a drive circuit for IGBT based static switches. Careful focus is concentrated on developing a drive qualified for protecting the switch in fault conditions, for controlling switching times in PWM inverter applications, for minimising noise ...
openaire   +1 more source

Silicon IGBT (Insulated Gate Bipolar Transistor)

2011
The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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Series Connection of Insulated Gate Bipolar Transistors (IGBTs)

IEEE Transactions on Power Electronics, 2012
High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits.
Ruchira Withanage, Noel Shammas
openaire   +1 more source