Results 141 to 150 of about 715 (178)

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

1987 International Electron Devices Meeting, 1987
This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang, B.J. Baliga, J.W. Kretchmer, P.A. Piacente   +3 more
openaire   +1 more source

INRUSH CURRENT LIMITATION BY UTILIZATION OF LINEAR MODE OF IGBT TRANSISTOR

HUMAN. ENVIRONMENT. TECHNOLOGIES. Proceedings of the Students International Scientific and Practical Conference, 2016
Input filter is essential part of each switched mode power supply design. Important issue that must be solved in the design process is control of the high inrush current due to rapid rise of the voltage during initial connection of the power to the power supply.
Kroičs, Kaspars, Saltanovs, Rodions
openaire   +2 more sources

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

IEEE Transactions on Semiconductor Manufacturing, 2020
Vertical PNP bipolar transistor test structures were fabricated and measured, attempting to electrically obtain information on carrier lifetime in the voltage-supporting base region of Insulated Gate Bipolar Transistors (IGBTs). Owing to the structural similarity, the test structures and functional IGBTs can be integrated on the same wafers, making it ...
Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-Ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto   +21 more
openaire   +1 more source

Modeling and characterization of the insulated gate bipolar transistor (IGBT) for SPICE simulation

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002
A semiempirical CAD (computer-aided design) model for power IGBTs (insulated-gate bipolar transistors) which is physically based and uses subcircuit representation is presented. The model has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a simple form with readily extractable model parameters.
Z. Shen, T.P. Chow
openaire   +1 more source

HV pulse modulator with switch on HV IGBT transistor

2015
???????????? ?????????????????? ???????????? ?????????????????? ?? ?????????????????????????? ???????????????????????????? ?????? ?????????????????????? ???????????????? ?????????????????????? ?????????????????? ????-?????????????????????? ???????????????? ?????????????????????? ?????????? ????????????????. ?????????????????????????? ???????????????????
Dolgov, A., Kildisheva, O.
openaire   +1 more source

Series connection of insulated gate bipolar transistors (IGBTs)

2005 European Conference on Power Electronics and Applications, 2005
R. Withanage, N. Shammas, S. Tennakoon
openaire   +1 more source

A Fast IGBT Junction Temperature Estimation Approach Based on ON-State Voltage Drop

IEEE Transactions on Industry Applications, 2021
Qinghao Zhang, Yanyong Yang, Pinjia Zhang   +2 more
exaly  

A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications

IEEE Transactions on Power Electronics, 2021
Lin Liang, Yong Kang, Lubin Han
exaly  

Simulation Study of a Thyristor Conduction-Insulated Gate Bipolar Transistor (TC-IGBT) With a p-n-p Base and an n-p-n Collector for Reducing Turn-Off Loss

IEEE Transactions on Electron Devices, 2020
Mengxuan Jiang
exaly  

High Power Insulated Gate Bipolar Transistors (IGBTs)

Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988
H. Ohashi, A. Nakagawa, M. Hideshima
openaire   +1 more source