Results 171 to 180 of about 12,526 (222)

Optimum switching in IGBT transistor

Proceedings of MELECON '94. Mediterranean Electrotechnical Conference, 2002
The generalised industrial application of high power transistor based converters requires the implementation of transistor drive circuits capable of working without additional floating power supplies and satisfying a set of requirements imposed by the industrial end users.
A.R. Quintas, A. Carvalho, A. Araujo, A. Martins   +3 more
openaire   +1 more source

Two novel modeling methodologies for IGBT transistor

IEEE 2002 28th Annual Conference of the Industrial Electronics Society. IECON 02, 2003
To overcome the limitations of the conventional Matlab IGBT model, two model libraries for the power device (IGBT) aimed for the simulation of the power circuit tools have been proposed. To that end, we adapt the Stateflow to create the first model that consists of both control and operative parts.
F. Charfi, M.B. Messaoud, B. Francois, K. Al-Haddad, F. Sellami   +4 more
openaire   +1 more source

Research of IGBT-transistor in pulse switch

2016 2nd International Conference on Industrial Engineering, Applications and Manufacturing (ICIEAM), 2016
This paper describes research of influence of gate current and transistor commutation voltage on the switch operation efficiency in IGBT-transistor switch. At research and development of the high-effective energy-saving solutions, we often meet the task of modeling processes related to the electric pulse switch converters.
A. S. Martyanov, D. V. Korobatov, E. V. Solomin   +2 more
openaire   +1 more source

Short-circuit capability of IGBT (COMFET) transistors

Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting, 2003
The IGBT (insulated-gate bipolar transistor) or COMFET (conductivity-modulated field-effect transistor) has the same low drive requirements as for MOSFETs and the same carrier injection as a bipolar transistor, giving a low voltage drop even at high breakdown voltage ratings. The authors study the short-circuit capability.
T. Rogne, N.A. Ringheim, B. Odegard, J. Eskedal, T.M. Undeland   +4 more
openaire   +1 more source

Half Bridge Driver for MOSFET and IGBT Transistors

2019 IEEE International Conference on Modern Electrical and Energy Systems (MEES), 2019
the paper deals with the problem of designing a suitable driver for MOSFET and IGBT transistors. The circuit should provide not only sufficient excitation but also galvanic separation of the power and control circuit and should be able to set the optional length of the safety gap when switching the transistors connected in one converter branch.
Dobroslav Kovac, Andrii Gladyr
openaire   +1 more source

A new hybrid SOI LDMOS-IGBT power transistor

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings, 2002
A new hybrid LDMOS-IGBT structure using SOI film is reported. The new device integrates the advantages of SOI technology, the conductivity modulation of IGBT and the high switching speed of DMOSFET.
J. Zeng, P.A. Mawby, M.S. Towers, K. Board   +3 more
openaire   +1 more source

Series Connection of Insulated Gate Bipolar Transistors (IGBTs)

IEEE Transactions on Power Electronics, 2012
High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits.
Ruchira Withanage, Noel Shammas
openaire   +1 more source

An IGBT and MOSFET gated SiC bipolar junction transistor

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344), 2003
A high voltage 4H-SiC bipolar junction transistor (BJT) has been developed with 16 A, 600 V rating. This paper presents a new base drive structure for the SiC BJT for inverter application. The driver consists of one IGBT and one MOSFET to help turn-on and turn-off of the SiC BJT transistor in a Darlington like configuration.
null Huijie Yu, J. Lai, X. Li, Y. Luo, L. Fursin, J.H. Zhao, P. Alexandrov, B. Wright, M. Weiner   +8 more
openaire   +1 more source

A transient model for insulated gate bipolar transistors (IGBTs)

International Journal of Electronics, 2008
In this paper, we present a physics-based model for the non punch-through (NPT) insulated gate bipolar transistor (IGBT) during transient turn off period. The steady state part of the model is derived from the solution of the ambipolar diffusion equation in the drift region of the NPT IGBT.
Sehwan Ryu, Myungsoo Lee, Mohsen A. Hajji, Hyungkeun Ahn, Deukyoung Han, Mahmoud El Nokali   +5 more
openaire   +1 more source

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

1987 International Electron Devices Meeting, 1987
This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang, B.J. Baliga, J.W. Kretchmer, P.A. Piacente   +3 more
openaire   +1 more source