Results 181 to 190 of about 12,526 (222)

Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT)

2021 IEEE Region 10 Symposium (TENSYMP), 2021
In this work, we report the impact of displacement defect due to radiation effect in the superjunction insulated gate bipolar transistor (SJ-IGBT). Simulations on its DC characteristics, breakdown voltage and power dissipation are carried out via technology computer-aided design (TCAD) simulation.
Gyeongyeop Lee, Jonghyeon Ha, Jungsik Kim   +2 more
openaire   +1 more source

The current gain of bipolar transistor in the IGBT measurement

2000 TENCON Proceedings. Intelligent Systems and Technologies for the New Millennium (Cat. No.00CH37119), 2002
The common emitter current gain (/spl beta//sub 0/) of the bipolar transistor in the IGBT (insulated gate bipolar transistor) structure semiconductor device is measured in this paper. The first step of the measurement is to find the early voltage (V/sub A/) of the device.
J. Parnklang, S. Niemcharoen, S. Yardsamer   +2 more
openaire   +1 more source

Thermal reliability of power insulated gate bipolar transistor (IGBT) modules

Twelfth Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Proceedings, 2002
Thermal behavior of power insulated gate bipolar transistor (IGBT) modules was studied in this paper experimentally. Due primarily to the thermal mismatch in IGBT sandwich structure, thermal stress induced solder fatigue failures, such as the forming and growing of voids and cracks in IGBT solder layers, were quasi-dynamically observed in thermal ...
null Wuchen Wu, null Guo Gao, null Limin Dong, null Zhengyuan Wang, M. Held, P. Jacob, P. Scacco   +6 more
openaire   +1 more source

IGBT transistor switching in a unique industrial application

Proceedings of 5th International Conference on Power Electronics and Variable-Speed Drives, 1994
The paper presents the design, implementation, active protection against fault conditions and test results of a drive circuit for IGBT based static switches. Careful focus is concentrated on developing a drive qualified for protecting the switch in fault conditions, for controlling switching times in PWM inverter applications, for minimising noise ...
openaire   +1 more source

Silicon IGBT (Insulated Gate Bipolar Transistor)

2011
The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
openaire   +1 more source

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

IEEE Transactions on Semiconductor Manufacturing, 2020
Vertical PNP bipolar transistor test structures were fabricated and measured, attempting to electrically obtain information on carrier lifetime in the voltage-supporting base region of Insulated Gate Bipolar Transistors (IGBTs). Owing to the structural similarity, the test structures and functional IGBTs can be integrated on the same wafers, making it ...
Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-Ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto   +21 more
openaire   +1 more source

The ETO-IGBT—A Dual-Concept of Thyristor and Transistor Power Devices

IEEE Transactions on Industry Applications, 2019
The performance of inverters strongly depends on the characteristics of the employed semiconductor devices. Bound to a trade-off between conduction- and switching-optimization, these devices require a decision for the optimal loss balance. In this work, a new medium-voltage semiconductor device consisting of both thyristor-based and transistor-based ...
Jakob Teichrib, Rik W. De Doncker
openaire   +1 more source

Modeling and characterization of the IGBT electrothermal transistor for circuit applications

Proceedings of the 39th Midwest Symposium on Circuits and Systems, 2002
An analytical model for the power Insulated Gate Bipolar Transistor (IGBT) including electrothermal interactions is developed. In this model the device's temperature becomes an interactive variable during the simulation. The model has been implemented in the Saber circuit simulator.
A. Amimi, R. Bouchakour, T. Maurel, O. Oliaei   +3 more
openaire   +1 more source

INRUSH CURRENT LIMITATION BY UTILIZATION OF LINEAR MODE OF IGBT TRANSISTOR

HUMAN. ENVIRONMENT. TECHNOLOGIES. Proceedings of the Students International Scientific and Practical Conference, 2016
Input filter is essential part of each switched mode power supply design. Important issue that must be solved in the design process is control of the high inrush current due to rapid rise of the voltage during initial connection of the power to the power supply.
Kroičs, Kaspars, Saltanovs, Rodions
openaire   +2 more sources

Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)

2008 International Conference on Prognostics and Health Management, 2008
Insulated Gate Bipolar Transistors (IGBTs) are used in applications such as the switching of automobile and train traction motors, high voltage power supplies, and in aerospace applications such as switch mode power supplies (SMPS) to regulate DC voltage.
Nishad Patil, Diganta Das, Kai Goebel, Michael Pecht   +3 more
openaire   +1 more source