Results 191 to 200 of about 12,526 (222)
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High accuracy SPICE behavioral macromodeling of insulated gate bipolar transistor (IGBT)
APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition, 2002This paper presents a new behavioral IGBT macromodel, that uses the enhanced capabilities of the nonlinear controlled sources implemented in modern SPICE like simulators. It describes the device's internal static equations directly with "in line equation" controlled sources and the nonlinear voltage dependent gate capacitances are piece-wise-linear ...
A. Maxim, D. Andreu, J. Boucher
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Materials Science Forum, 2005
In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a
Lin Zhu, S. Balachandran, T.P. Chow
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Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS), 2019Vertical PNP bipolar transistor test structures were fabricated, which can be integrated on the same wafer with functional IGBTs. Common-base current gain was measured by applying zero voltage to the leaky back side junction, from which minority carrier lifetime in the base region was extracted.
K. Takeuchi +20 more
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HV pulse modulator with switch on HV IGBT transistor
2015???????????? ?????????????????? ???????????? ?????????????????? ?? ?????????????????????????? ???????????????????????????? ?????? ?????????????????????? ???????????????? ?????????????????????? ?????????????????? ????-?????????????????????? ???????????????? ?????????????????????? ?????????? ????????????????. ?????????????????????????? ???????????????????
Dolgov, A., Kildisheva, O.
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High Power Insulated Gate Bipolar Transistors (IGBTs)
Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988H. Ohashi, A. Nakagawa, M. Hideshima
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Series connection of insulated gate bipolar transistors (IGBTs)
2005 European Conference on Power Electronics and Applications, 2005R. Withanage, N. Shammas, S. Tennakoon
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A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications
IEEE Transactions on Power Electronics, 2021Lin Liang
exaly
Insulated gate bipolar transistor (IGBT) simulation using IG-Spice
2014Master of ...
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A Fast IGBT Junction Temperature Estimation Approach Based on ON-State Voltage Drop
IEEE Transactions on Industry Applications, 2021Yanyong Yang +2 more
exaly