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Investigations on ageing of IGBT transistors under repetitive short-circuits operations
2009In this paper, we describe experimental results concerning the ageing of 600 V IGBT under repetitive short circuit conditions. A critical energy, which is dependent on test conditions, has been already pointed out which separates two failure modes. The first one, with a cumulative degradation effect, requires some 104 short circuits to reach failure ...
Berkani, Mounira +3 more
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Real-Time Aging Monitoring for IGBT Modules Using Case Temperature
IEEE Transactions on Industrial Electronics, 2016Ze Wang, Wei Qiao, Liyan Qu
exaly
Condition Monitoring IGBT Module Bond Wires Fatigue Using Short-Circuit Current Identification
IEEE Transactions on Power Electronics, 2017Pengju Sun, Can Gong, Xiong Du
exaly
Indirect IGBT Over-Current Detection Technique Via Gate Voltage Monitoring and Analysis
IEEE Transactions on Power Electronics, 2019Xinchang Li, Hongyue Zhu, Wai Tung Ng
exaly
Monitoring Potential Defects in an IGBT Module Based on Dynamic Changes of the Gate Current
IEEE Transactions on Power Electronics, 2013Pengju Sun
exaly
Comportement de transistors IGBT en régimes répétitifs de courts-circuits
Revue internationale de génie électrique, 2004Frédéric Saint-Eve +2 more
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