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Investigations on ageing of IGBT transistors under repetitive short-circuits operations
2009In this paper, we describe experimental results concerning the ageing of 600 V IGBT under repetitive short circuit conditions. A critical energy, which is dependent on test conditions, has been already pointed out which separates two failure modes. The first one, with a cumulative degradation effect, requires some 104 short circuits to reach failure ...
Berkani, Mounira +3 more
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Real-Time Aging Monitoring for IGBT Modules Using Case Temperature
IEEE Transactions on Industrial Electronics, 2016Liyan Qu, Wei Qiao, Ze Wang
exaly
Detection and Recording of Acoustic Emission in Discrete IGBT Transistors
2019openaire +1 more source
Development of IGBT Cell Process Model for Serial Transistors
2025 IEEE 26th International Conference of Young Professionals in Electron Devices and Materials (EDM)Andrey Shmakov, Anastasia Tikhomirova
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