Results 151 to 160 of about 715 (178)
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Thermal Performances and Annual Damages Comparison of MMC Using Reverse Conducting IGBT and Conventional IGBT Module

IEEE Transactions on Power Electronics, 2021
Laili Wang, Jinjun Liu, Fengtao Yang
exaly  

Investigations on ageing of IGBT transistors under repetitive short-circuits operations

2009
In this paper, we describe experimental results concerning the ageing of 600 V IGBT under repetitive short circuit conditions. A critical energy, which is dependent on test conditions, has been already pointed out which separates two failure modes. The first one, with a cumulative degradation effect, requires some 104 short circuits to reach failure ...
Berkani, Mounira   +3 more
openaire   +1 more source

Real-Time Aging Monitoring for IGBT Modules Using Case Temperature

IEEE Transactions on Industrial Electronics, 2016
Liyan Qu, Wei Qiao, Ze Wang
exaly  

Development of IGBT Cell Process Model for Serial Transistors

2025 IEEE 26th International Conference of Young Professionals in Electron Devices and Materials (EDM)
Andrey Shmakov, Anastasia Tikhomirova
openaire   +1 more source

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