Results 121 to 130 of about 715 (178)

Construction and simulation of a joint scale model for power electronic converters based on wavelet decomposition and reconstruction algorithms. [PDF]

PLoS One
He J.
europepmc   +1 more source

Design and implementation of an innovative single-phase direct AC-AC bipolar voltage buck converter with enhanced control topology. [PDF]

Sci Rep
Ashraf N, Abbas G, Mushtaq Z, Rehman AU, Ouahada K, Hamam H.   +5 more
europepmc   +1 more source

Mexican axolotl optimization algorithm with a recalling enhanced recurrent neural network for modular multilevel inverter fed photovoltaic system. [PDF]

Sci Rep
Madavan R, Karthikeyan B, Palanisamy R, Gulbarga MI, Al Awadh M, Hui LT.   +5 more
europepmc   +1 more source

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Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

IEEE Transactions on Reliability, 2009
Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and ...
Diganta Das, Kai Goebel, Michael Pecht   +2 more
exaly   +2 more sources

Optimum switching in IGBT transistor

Proceedings of MELECON '94. Mediterranean Electrotechnical Conference, 2002
The generalised industrial application of high power transistor based converters requires the implementation of transistor drive circuits capable of working without additional floating power supplies and satisfying a set of requirements imposed by the industrial end users.
A.R. Quintas, A. Carvalho, A. Araujo, A. Martins   +3 more
openaire   +1 more source

Research of IGBT-transistor in pulse switch

2016 2nd International Conference on Industrial Engineering, Applications and Manufacturing (ICIEAM), 2016
This paper describes research of influence of gate current and transistor commutation voltage on the switch operation efficiency in IGBT-transistor switch. At research and development of the high-effective energy-saving solutions, we often meet the task of modeling processes related to the electric pulse switch converters.
A. S. Martyanov, D. V. Korobatov, E. V. Solomin   +2 more
openaire   +1 more source

Short-circuit capability of IGBT (COMFET) transistors

Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting, 2003
The IGBT (insulated-gate bipolar transistor) or COMFET (conductivity-modulated field-effect transistor) has the same low drive requirements as for MOSFETs and the same carrier injection as a bipolar transistor, giving a low voltage drop even at high breakdown voltage ratings. The authors study the short-circuit capability.
T. Rogne, N.A. Ringheim, B. Odegard, J. Eskedal, T.M. Undeland   +4 more
openaire   +1 more source

Two novel modeling methodologies for IGBT transistor

IEEE 2002 28th Annual Conference of the Industrial Electronics Society. IECON 02, 2003
To overcome the limitations of the conventional Matlab IGBT model, two model libraries for the power device (IGBT) aimed for the simulation of the power circuit tools have been proposed. To that end, we adapt the Stateflow to create the first model that consists of both control and operative parts.
F. Charfi, M.B. Messaoud, B. Francois, K. Al-Haddad, F. Sellami   +4 more
openaire   +1 more source