Results 81 to 90 of about 7,414 (228)
Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter [PDF]
, 2002 We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter.
Asenov, A., Brown, A.R., Watling, J.R.
core +1 more source
Nanotechnology and Precision Engineering, 2020 Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) is very important for their practical application.
Shen Diao +6 more
doaj +1 more source
MXene‐Based Flexible Memory and Neuromorphic Devices
Small, EarlyView.The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li +13 more
wiley +1 more source
Field-effect transistors as dc amplifiers [PDF]
Field effect transistors as direct current ...
Gardner, F. M.
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Latch-up characteristics of a trench-gate conductivity modulated power transistor [PDF]
, 1995 Conference Theme: Asia-Pacific Microelectronics 2000In this paper, a new conductivity modulated power transistor, called the Lateral Trench-Gate Bipolar Transistor (LTGBT), is presented.
Jun, C, Lai, PT, Ng, WT, Sin, JKO
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High VoltageThe submodule in multilevel modular converters experiences a very fast transient overvoltage (VFTO) during switch operation of gas‐insulated switchgear, which also results in overvoltage on power devices, such as thyristors and insulated gate bipolar ...
Hong Shen +7 more
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Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
Small, EarlyView.An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn +8 more
wiley +1 more source
Small, EarlyView.Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Design of a 100 kHz wide bandgap inverter for motor applications with active damped sine wave filter
The Journal of Engineering, 2019 In this study, a three-phase motor inverter with sinusoidal output voltages based on the application of gallium nitride transistors and advanced control is analysed.
Franz Maislinger +4 more
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A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field
Energies, 2020 A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement ...
Meng Zhang +4 more
doaj +1 more source