Results 81 to 90 of about 585,541 (220)

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Energies, 2019
The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications.
Baochao Wang, Shili Dong, Shanlin Jiang, Chun He, Jianhui Hu, Hui Ye, Xuezhen Ding   +6 more
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Voltage Balancing in Series-Connected GaN Devices Using Scalable Transformer-Coupled Gate Driver

IEEE Open Journal of the Industrial Electronics Society
This article presents a scalable transformer-coupled open-loop gate-driving technique that enables voltage balancing across series-connected GaN devices.
Sohrab Ghafoor, Reza Mirzadarani, Hitesh Dialani, Peter Vaessen, Mohamad Ghaffarian Niasar   +4 more
doaj   +1 more source

A Review of Transient Support and Security‐Stability Enhancement Control Strategies for Grid‐Forming Voltage Source Converter‐Based High Voltage Direct Current Transmission

High Voltage, EarlyView.
ABSTRACT Amid the ongoing global energy transition, the short‐circuit ratios of AC power grids are continuously decreasing. Grid‐forming voltage source converter‐based high voltage direct current transmission (GFM VSC‐HVDC) systems have therefore come to the forefront of attention.
Cheng Peng, Guangfu Tang, Yuexi Yang, Xiao Zhou, Chong Gao, Zhiyuan He, Xinying Wang, Hui Pang   +7 more
wiley   +1 more source

Developments and Prospects of Voltage Source Converter‐High‐Voltage Direct Current Transmission Technology

High Voltage, EarlyView.
ABSTRACT Voltage source converter‐high‐voltage direct current (VSC‐HVDC) transmission is a key technology for renewable‐energy integration, regional grid interconnection and passive‐network power supply. This review summarises the development history of VSC‐HVDC, the evolution of converter topologies, its technical advantages and representative ...
Licheng Li, Yongxia Han, Yuebin Zhou, Huangqing Xiao, Yang Dong, Weisheng Zhang, Yanan Ye, Yichang Li   +7 more
wiley   +1 more source

Research Progress on Electrical Insulation Under Superimposed Voltage With High‐Frequency Harmonics in New‐Type Power Systems

High Voltage, EarlyView.
ABSTRACT A new‐type power system serves as a critical technical support for the integration of new energy, and its secure and stable operation is of great importance. However, the extensive utilisation of power electronic devices leads to power equipment insulation being subjected to electrical stresses of high‐frequency harmonics, which can easily ...
Shengtao Li, Chuang Zhang, Weiwang Wang, Yuanwei Zhu, Liuqing Yang   +4 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, Volume 36, Issue 88, 2 November 2026.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology

, 1997
This paper presents preliminary results towards developing the next generation of Insulated Gate Bipolar Transistors for high voltage applications.
Udrea, F, Millington, AD, Chan, SSM, Waind, PR, Amaratunga, GAJ, Thomson, J, Keller, S, ,, Crees, DE   +8 more
core  

Neutral-point-clamped hybrid multilevel converter with DC fault blocking capability for medium-voltage DC transmission

Journal of Modern Power Systems and Clean Energy, 2017
This paper proposes a novel hybrid multilevel converter with DC fault-blocking capability, i.e., the neutral-point clamped hybrid multilevel converter (NHMC).
Xinyu YU, Yingdong WEI, Qirong JIANG, Xiaorong XIE, Yuquan LIU, Ke WANG   +5 more
doaj   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, Volume 13, Issue 61, 3 November 2026.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source