Results 131 to 140 of about 1,395 (225)

Ionomer-Based Ion-Sensitive Field-Effect Transistor for Lithium Ion Sensing. [PDF]

ACS Omega
Colak TO, Kurt M, Yaman E, Demirci Sankir N, Sankir M.   +4 more
europepmc   +1 more source

Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications. [PDF]

Nat Electron
Kumar AS, Dalcanale S, Uren MJ, Pomeroy JW, Smith MD, Parke JA, Howell RS, Kuball M.   +7 more
europepmc   +1 more source

Performance Degradation Modeling and Its Prediction Algorithm of an IGBT Gate Oxide Layer Based on a CNN-LSTM Network. [PDF]

Micromachines (Basel), 2023
Wang X, Zhou Z, He S, Liu J, Cui W.
europepmc   +1 more source

Reduced-order linearized dynamic model for induction motor-driven centrifugal fan-pump system. [PDF]

Sci Rep
Turkeri C, Kiselychnyk O, Ekinci S, Izci D, Bajaj M, Rubanenko O.   +5 more
europepmc   +1 more source

Improved finite control set model predictive current control design for variable-speed wind-energy conversion system connected to the grid via an LCL filter. [PDF]

Sci Rep
Hamid HBA, Hassan JNA, Ali GH, Ma T, Ko C, Khan H, Mohammed OAA, Shahid A.   +7 more
europepmc   +1 more source

Neural vs Neuromorphic Interfaces: Where Are We Standing? [PDF]

Chem Rev
Rana D, Babushkina N, Gini M, Flores Cáceres A, Li H, Maybeck V, Criscuolo V, Mayer D, Ienca M, Musall S, Rincon Montes V, Offenhäusser A, Santoro F.   +12 more
europepmc   +1 more source

Performer-KAN-Based Failure Prediction for IGBT with BO-CEEMDAN. [PDF]

Micromachines (Basel)
Xiao Y, Wang F.
europepmc   +1 more source

Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter. [PDF]

Sci Rep
Cheng HC, Jhu WY, Liu YC, Yu CF, Chiu PK, Chang TC.   +5 more
europepmc   +1 more source

Research on Deflection and Stress Analyses and the Improvement of the Removal Uniformity of Silicon in a Single-Sided Polishing Machine Under Pressure. [PDF]

Micromachines (Basel)
Ye G, Yao Z.
europepmc   +1 more source

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc   +1 more source