Results 151 to 160 of about 585,541 (220)

High-frequency, low-energy organic event-based sensors for closed-loop neurostimulation. [PDF]

Nat Sens
Yang CY, Zhao Z, Wu HY, Gao D, Huang JD, Ji J, Xiong M, Liu T, Harikesh PC, Marks A, Wang XY, Massetti M, Shao S, Pei J, McCulloch I, Berggren M, Tu D, Gelinas J, Khodagholy D, Fabiano S.   +19 more
europepmc   +1 more source

Bio-inspired organic electrosense transistor for impalpable perception. [PDF]

Sci Adv
Wang C, Li J, Li X, Li W, Li Y, Huang Y, Wang C, Liu Z, Wang M, Chen N, Chen M, Pan L, Zhang F, Bi J, Li L, Hu W, Chen X.   +16 more
europepmc   +1 more source

Dynamical Characteristics of Isolated Donors, Acceptors, and Complex Defect Centers in Novel ZnO. [PDF]

Nanomaterials (Basel)
Talwar DN, Becla P.
europepmc   +1 more source

Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications. [PDF]

Micromachines (Basel)
Issa W, Gonzalez JO, Alatise O.
europepmc   +1 more source

Low-Cost Source Measure Unit (SMU) to Characterize Sensors Built on Graphene-Channel Field-Effect Transistors. [PDF]

Sensors (Basel)
Galanti AM, Haidekker MA.
europepmc   +1 more source

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Insulated gate bipolar transistors

1998
In this chapter, the basic structure and operating characteristics of the IGBT are first described. The analysis of forward and reverse blocking capability is then performed followed by discussion of the on-state characteristics of IGBTs with various collector structures.
EVANS MICHAEL J, IRONS ROBERT C
openaire   +3 more sources

Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias

2020 6th International Conference on Applied System Innovation (ICASI), 2020
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang, Yi-Syuan Lin, Rung Jin Chang, Han-Ya Yang, Sung-Ching Chi   +4 more
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Insulated Gate Bipolar Transistors

2023
openaire   +1 more source