Results 161 to 170 of about 585,541 (220)

Silicon IGBT (Insulated Gate Bipolar Transistor)

2011
The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
openaire   +1 more source

Overview of Recent Progress in Condition Monitoring for Insulated Gate Bipolar Transistor Modules: Detection, Estimation, and Prediction

High Voltage, 2021
Meng Huang, Xiaoming Zha, Haoran Wang
exaly  

Insulated gate bipolar transistor

2018
openaire   +1 more source

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

IEEE Electron Device Letters, 2015
Wentao Yang, Hao Feng, Johnny Kin On Sin
exaly  

An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)

IEEE Transactions on Power Electronics, 1991
A R Hefner
exaly  

Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review

IEEE Transactions on Power Electronics, 2015
Hyunseok Oh, Byeng D. Youn, Bongtae Han
exaly  

Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT

IEEE Transactions on Power Electronics, 2012
Sankara Narayanan Ekkanath Madathil, N Luther-King, Mark Sweet   +2 more
exaly  

The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling

IEEE Transactions on Electron Devices, 2010
Florin Udrea, Marina Antoniou, Friedhelm Bauer   +2 more
exaly  

An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)

IEEE Transactions on Power Electronics, 1990
A R Hefner
exaly  

A Thermal Model for Insulated Gate Bipolar Transistor Module

IEEE Transactions on Power Electronics, 2004
Hyung-Keun Ahn
exaly