Results 181 to 190 of about 1,395 (225)
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Insulated Gate Bipolar Transistors
1998In this chapter, the basic structure and operating characteristics of the IGBT are first described. The analysis of forward and reverse blocking capability is then performed followed by discussion of the on-state characteristics of IGBTs with various collector structures.
Ranbir Singh, B. Jayant Baliga
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Mahalanobis Distance Approach for Insulated Gate Bipolar Transistors Diagnostics
2010Insulated gate bipolar transistors (IGBT) are used in critical application areas such as inverters in hybrid cars, motion control systems for variable speed motor drives and high power switch mode power supplies. In these critical applications, diagnostic approaches are required to monitor the health and predict the reliability of these devices to ...
Nishad Patil +2 more
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An insulated gate bipolar transistor with high surge endurance
Electronics and Communications in Japan (Part II: Electronics), 1996AbstractThe relationship between the device property under drain‐source breakdown and device structure parameters of insulated gate bipolar transistors was simulated. Then the following facts were revealed: 1) the impurity concentration in the n−drain layer and the layer thickness determine the breakdown mode.
Norihito Tokura +2 more
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Equivalent circuit model for an insulated gate bipolar transistor
IEE Proceedings - Electric Power Applications, 2005An equivalent-circuit model for an insulated gate bipolar transistor is developed. The model is based on a one-dimensional device simulation model. It also adopts a multi-MOS model so as to be able to include the doping variation in the MOS body. The model can be used for both circuit simulations and simple device simulations.
C.-H. Kao, C.-C. Tseng, Y.-C. Liang
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Recent advances in insulated gate bipolar transistor technology
IEEE Transactions on Industry Applications, 1990Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhance both the turn-off speed and the safe operating area
H. Yilmaz +4 more
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A thermal model for insulated gate bipolar transistor module
IEEE Transactions on Power Electronics, 2004A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/.
null Zhaohui Luo +2 more
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Silicon IGBT (Insulated Gate Bipolar Transistor)
2011The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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A novel high performance insulated gate bipolar transistor
Solid-State Electronics, 2006Abstract For the first time, a new concept of LDE-IGBT (local drift-region enhanced IGBT) is proposed and verified by two-dimensional (2D) device-circuit mixed simulations. The structure of the proposed device is almost identical to that of the conventional IGBT, except for an additional n + plugged region under the gate contact. The proposed device
Fei Zhang, Lina Shi, Chengfang Li
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A transient model for insulated gate bipolar transistors (IGBTs)
International Journal of Electronics, 2008In this paper, we present a physics-based model for the non punch-through (NPT) insulated gate bipolar transistor (IGBT) during transient turn off period. The steady state part of the model is derived from the solution of the ambipolar diffusion equation in the drift region of the NPT IGBT.
Sehwan Ryu +5 more
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The Trench Planar Insulated Gate Bipolar Transistor (TPIGBT)
IEE Colloquium Recent Advances in Power Devices, 1999A new type of IGBT structure, with a trench gate placed in the middle of the JFET region, has been proposed. The device, called the trench-planar IGBT (TPIGBT) has been analysed in detail in terms of its on-state performance and resistive turn-off, and compared to a reference 2 kV planar, fine-lithography IGBT.
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