Results 191 to 200 of about 7,414 (228)
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The Trench Planar Insulated Gate Bipolar Transistor (TPIGBT)
IEE Colloquium Recent Advances in Power Devices, 1999A new type of IGBT structure, with a trench gate placed in the middle of the JFET region, has been proposed. The device, called the trench-planar IGBT (TPIGBT) has been analysed in detail in terms of its on-state performance and resistive turn-off, and compared to a reference 2 kV planar, fine-lithography IGBT.
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An efficient gate driver for high-power insulated gate bipolar transistors
Proceedings of 1994 IEEE Industry Applications Society Annual Meeting, 2002This paper presents a novel FET/IGBT gate drive circuit for high power applications. Full galvanic isolation is provided, no floating power supplies are needed and continuous (DC) gate drive is possible. The circuit topology consists in essence of an inverter coupled to a synchronous rectifier.
M.J. Case +3 more
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Insulated gate bipolar transistor with trench gate structure of accumulation channel
Journal of Semiconductors, 2010An accumulation channel trench gate insulated gate bipolar transistor (ACT-IGBT) is proposed. The simulation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2.
Qian Mengliang +3 more
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A novel trench clustered insulated gate bipolar transistor (TCIGBT)
IEEE Electron Device Letters, 2000A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well. The TCIGBT provides a unique "self-clamping" feature to protect the trenches from high electric fields. The simulation results based on 1.2 kV nonpunchthrough technology indicate
O. Spulber +7 more
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Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors
IEEE Transactions on Plasma Science, 2013This paper describes a low cost, easy-to-implement circuit for triggering ignitrons in plasma physics experiments and other pulsed power applications. Using insulated gate bipolar transistors (IGBTs) for rapid switching, the circuit delivers >2 peak current from a 0.1-μF capacitor to the ignitron trigger pin with a rise time of ~ 0.6 μs.
Chaplin, Vernon H., Bellan, Paul M.
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Current Distribution Analysis of Insulated Gate Bipolar Transistor Cells
Japanese Journal of Applied Physics, 2010In current insulated gate bipolar transistor (IGBT) technology, a corner or centered gate pad is employed with polycrystalline silicon (poly-Si) to form the metal oxide semiconductor (MOS) gate structure which forms a resistor–capacitor (RC) network across the die. This paper presents, for the first time, an analysis using circuit simulator, SABER,
Hongyao Long +3 more
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Insulated Gate Bipolar Transistors based on Pure Boron Collectors
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019Continuous efforts are invested to improve mid- and high-voltage devices to improve on-state resistances, switching performance and overall power losses. However, given the current maturity of Silicon technologies, significant improvements are difficult to achieve.
Ahmed Elsayed +2 more
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Equivalent circuit model for an insulated gate bipolar transistor
IEE Proceedings - Electric Power Applications, 2005An equivalent-circuit model for an insulated gate bipolar transistor is developed. The model is based on a one-dimensional device simulation model. It also adopts a multi-MOS model so as to be able to include the doping variation in the MOS body. The model can be used for both circuit simulations and simple device simulations.
C.-H. Kao, C.-C. Tseng, Y.-C. Liang
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An insulated gate bipolar transistor with high surge endurance
Electronics and Communications in Japan (Part II: Electronics), 1996AbstractThe relationship between the device property under drain‐source breakdown and device structure parameters of insulated gate bipolar transistors was simulated. Then the following facts were revealed: 1) the impurity concentration in the n−drain layer and the layer thickness determine the breakdown mode.
Norihito Tokura +2 more
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Computer Aided Optimization of Insulated Gate Bipolar Transistors
ECS Meeting AbstractsCompared to other types of transistors, insulating gate bipolar transistors (IGBTs) have high on-state current and breakdown voltage, which make them ideal for low-frequency (<20 kHz) power applications, such as switching devices for motor drive systems and uninterruptible power supplies.
Pranathi Brungi, Petru Andrei
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