Results 171 to 180 of about 1,395 (225)
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The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling
IEEE Transactions on Electron Devices, 2010In this paper, we present a detailed analysis and optimization of the superjunction (SJ) insulated gate bipolar transistor (IGBT). The SJ IGBT is a new device that breaks the IGBT limits, i.e., it delivers performance that is dramatically better. More specifically, we demonstrate here that the optimized SJ IGBT can deliver turn-off losses that are at ...
Florin Udrea +2 more
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Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors [PDF]
IEEE Electron Device Letters, 2015 In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed.
Neophytos Lophitis +2 more
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New Energy Empowerment Using Kernel Principal Component Analysis in Insulated Gate Bipolar Transistors Module Monitoring [PDF]
Sustainability, 2018 At present, energy exhausted and environmental pollution are important issues, vigorously promoting new energy and improving the utilization efficiency and management level of new energy is an important way to achieve sustainable social development ...
Ming Lang Tseng +2 more
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Electrically assisted stereolithography 3D printing of graded permittivity composites for in-situ encapsulation of insulated gate bipolar transistors (IGBTs) [PDF]
Materials and Design, 2023 Insulated gate bipolar transistors (IGBTs) find applications in diverse fields, such as integrated motor drives, controllable power systems, and electric vehicles.
She Chen, Yufeng Liu, Guanghai Fei
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Bipolar Static Induction Transistor With Insulated Gate
IEEE Transactions on Electron Devices, 2022In this article, we show a simple power device architecture that combines the features of the SIT and the power MOSFET: insulated gate, positive threshold, fast switching, current deep in the semiconductor, and compact design. It has the conduction characteristics of a BSIT, and it is voltage-controlled as a MOSFET.
Colalongo L., Richelli A.
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2020 6th International Conference on Applied System Innovation (ICASI), 2020
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang +4 more
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Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang +4 more
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Latching in lateral insulated gate bipolar transistors
1987 International Electron Devices Meeting, 1987The maximum gate controllable current of several different lateral insulated gate bipolar transistor (LIGBT) structures have been investigated. It is shown that the turn-on gate resistance affects the latching current of LIGBT's because of the faster turn-on of the lateral current component than the vertical current component. Addition of p+ sinker, n+
T.P. Chow +3 more
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"Insulated gate bipolar transistor (IGBT) with a trench gate structure "
1987 International Electron Devices Meeting, 1987This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang +3 more
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A modular gate drive circuit for insulated gate bipolar transistors
Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 2002A novel gate drive circuit for insulated gate bipolar transistors (IGBTs) is presented which provides high-speed switching with attention to dV/dt requirements. It also provides pulse-by-pulse overcurrent protection through on-state voltage monitoring while sending out a fault signal to the control circuit.
S.K. Biswas, B. Basak, K.S. Rajashekara
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Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
Materials Science Forum, 2006The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness
S. Balachandran +2 more
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