Results 41 to 50 of about 1,395 (225)

Simulation and optimization of diode and insulated gate bipolar transistor interaction in a chopper cell using MATLAB and Simulink [PDF]

, 2007
Recently, a simulation method for power electronic devices has emerged, which has high accuracy and short run times based on a Fourier model of the device physics.
Santi, Enrico, Bryant, Angus T., Hudgins, Jerry L., Hudgins, JL, Palmer, PR, Bryant, AT, Santi, E, ,, Palmer, Patrick R.   +8 more
core   +1 more source

Gate Drive Circuit for Noninsulating Gate GaN-Transistors Enabling Fast Switching and High-Frequency Operation

IEEE Open Journal of Industry Applications
Increasing requirements for high switching frequency and high power density have driven the development of gallium nitride power transistors. Among them, some GaN transistors feature a noninsulating gate, such as gate injection transistors and Schottky ...
Xiaomeng Geng, Carsten Kuring, Benedikt Kohlhepp, Oliver Hilt, Sibylle Dieckerhoff   +4 more
doaj   +1 more source

New‐Era Polymer Thermoelectrics: Material Innovations, Doping Frontiers, Decoupling Strategies, and Unconventional Applications

Advanced Materials, EarlyView.
The field of polymer thermoelectrics is entering a new era, featuring breakthroughs in addressing the conventional performance disparity between p‐type and n‐type polymers, pioneering doping frontiers, and sophisticated decoupling strategies. This review explores innovations in molecular design and superior stabilities, bridging the gap from ...
Suhao Wang
wiley   +1 more source

Diamond based nanostructures for electronic applications [PDF]

, 2010
Research in the area of CVD diamond thin films has increased significantly during the last decades to the point where single crystal diamond is now commercially available.
Tumilty, N.J.
core  

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors [PDF]

, 2013
This paper describes a low cost, easy-to-implement circuit for triggering ignitrons in plasma physics experiments and other pulsed power applications. Using insulated gate bipolar transistors (IGBTs) for rapid switching, the circuit delivers >200 A peak ...
Bellan, Paul M., Chaplin, Vernon H.
core  

Electro-Thermo-Mechanical Analysis of High-Power Press-Pack Insulated Gate Bipolar Transistors under Various Mechanical Clamping Conditions [PDF]

, 2014
With the continuously increasing demand for energy and the limited supply of fossil fuels, renewable power sources are becoming ever more important. Knowing that future energy demand will grow, manufacturers are increasing the size of new wind turbines ...
Hasmasan, Adrian Augustin, Busca, Cristian, Teodorescu, Remus; id_orcid, Helle, Lars, Blaabjerg, Frede; id_orcid   +4 more
core   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test

IEEE Access, 2021
In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency.
Jinyuan Li, Yunong Liu, Yaosheng Li, Zhongyuan Chen, Chunsheng Guo, Hao Li   +5 more
doaj   +1 more source

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

Advanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho, Ming‐Hung Wu, Yu‐De Lin, Po‐Chun Yeh, Kai Ni, Wen‐Yueh Jang, Tuo‐Hung Hou   +6 more
wiley   +1 more source