Results 41 to 50 of about 585,541 (220)
Applied Sciences, 2021 The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness of 1.50 mm, covered with a 35 μm thick Cu layer, were used. A surface finish was
Adrian Pietruszka +4 more
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Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Advanced Science, EarlyView.Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Long Short-Term Memory Mixture Density Network for Remaining Useful Life Prediction of IGBTs
TechnologiesA reliable prediction of the remaining useful life of critical electronic components, such as insulated gate bipolar transistors, is necessary for preventing failures in many industrial applications.
Yarens J. Cruz +2 more
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Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends
Energies, 2023 Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion.
Omar Sarwar Chaudhary +3 more
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Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Advanced Science, EarlyView.Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Advanced Science, EarlyView.HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
Energies, 2017 This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems.
Xiaofeng Ding +5 more
doaj +1 more source
Advanced Science, EarlyView.Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee +5 more
wiley +1 more source
, 2021 Technology-based computer-aided design (TCAD) models have been used to predict the static and dynamic performance of ultrahigh-voltage (UHV) 4H-Silicon Carbide (SiC) PiN diodes, insulated-gate bipolar transistors (IGBTs), and gate turn-off (GTO ...
Johannesson, Daniel, +3 more
core +1 more source
Sensors, 2019 With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents.
Chaoqun Jiao +4 more
doaj +1 more source