Results 41 to 50 of about 559,762 (225)

The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)

open access: yesApplied Sciences, 2021
The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness of 1.50 mm, covered with a 35 μm thick Cu layer, were used. A surface finish was
Adrian Pietruszka   +4 more
doaj   +1 more source

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

open access: yesAdvanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho   +6 more
wiley   +1 more source

Long Short-Term Memory Mixture Density Network for Remaining Useful Life Prediction of IGBTs

open access: yesTechnologies
A reliable prediction of the remaining useful life of critical electronic components, such as insulated gate bipolar transistors, is necessary for preventing failures in many industrial applications.
Yarens J. Cruz   +2 more
doaj   +1 more source

Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends

open access: yesEnergies, 2023
Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion.
Omar Sarwar Chaudhary   +3 more
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

open access: yesAdvanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang   +5 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

open access: yesAdvanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen   +9 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

open access: yesAdvanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim   +6 more
wiley   +1 more source

Impact of Silicon Carbide Devices on the Dynamic Performance of Permanent Magnet Synchronous Motor Drive Systems for Electric Vehicles

open access: yesEnergies, 2017
This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems.
Xiaofeng Ding   +5 more
doaj   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

open access: yesAdvanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee   +6 more
wiley   +1 more source

Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices

open access: yesSensors, 2019
With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents.
Chaoqun Jiao   +4 more
doaj   +1 more source

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