Results 11 to 20 of about 7,414 (228)
Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors
Case Studies in Thermal Engineering, 2019 In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du +4 more
doaj +3 more sources
Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors [PDF]
IEEE Electron Device Letters, 2015 In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed.
Marina Antoniou +2 more
exaly +3 more sources
INSULATED-GATE BIPOLAR TRANSISTOR
Chronos, 2022 Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.
openaire +1 more source
Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
doaj +1 more source
IET Power Electronics, 2023 Capacitance and Insulated gate bipolar transistor (IGBT) junction temperature are two critical healthy parameters for modular multilevel converters (MMC) sub‐modules (SMs) condition monitoring.
Wuyu Zhang +4 more
doaj +1 more source
Results in Physics, 2021 In this paper, the triggering process for single-event burnout (SEB) in conventional 4H-SiC trench insulated gate bipolar transistors (C-TIGBTs) is described. Furthermore, SEB is studied for both a conventional structure and a new structure.
Yan-juan Liu +3 more
doaj +1 more source
Hardening electronic devices against very high total dose radiation environments [PDF]
, 1972 The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made
Buchanan, B. +3 more
core +2 more sources
Electricity, 2021 The object of this research was a self-resonated inverter, based on paralleled Insulated-Gate Bipolar Transistors (IGBTs), for high-frequency induction heating equipment, operating in a wide range of output powers, applicable for research and industrial ...
Borislav Dimitrov +3 more
doaj +1 more source
Graphene Field Effect Transistors: Diffusion-Drift Theory [PDF]
, 2011 Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed.
Zebrev, Gennady I.
core +2 more sources
Electrical engineering & Electromechanics, 2023 Introduction. Recently, the number of high and medium voltage applications has increased dramatically. The connection between these different applications requires series-parallel combinations of power semiconductors.
A. Abdellah, M. Larbi, D. Toumi
doaj +1 more source