Results 11 to 20 of about 1,395 (225)

Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters [PDF]

open access: yesMokslas: Lietuvos Ateitis, 2010
The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
doaj   +2 more sources

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation [PDF]

open access: yesTransport and Telecommunication, 2015
The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed.
Krainyukov Alexander, Kutev Valery
doaj   +2 more sources

Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress. [PDF]

open access: yesSN Appl Sci, 2021
In this study we present the new power electronic circuit implementation to create the arbitrary near-rectangular electromagnetic pulse. To this end, we develop a parallel- Insulated-gate bipolar transistors (IGBT)-based magnetic pulse generator ...
Memarian Sorkhabi M   +3 more
europepmc   +3 more sources

Digital-Twin-Driven Intelligent Insulated-Gate Bipolar Transistor Production Lines [PDF]

open access: yesSensors
With the rapid development of novel energy vehicles, power generation, photovoltaics, and other industries, power electronic devices have gained considerable attention.
Xiao Zhang   +6 more
doaj   +2 more sources

Evaluation of Ultrahigh-Voltage 4H-SiC Gate Turn-Off Thyristors and Insulated-Gate Bipolar Transistors for High-Power Applications [PDF]

open access: yes, 2021
Technology-based computer-aided design (TCAD) models have been used to predict the static and dynamic performance of ultrahigh-voltage (UHV) 4H-Silicon Carbide (SiC) PiN diodes, insulated-gate bipolar transistors (IGBTs), and gate turn-off (GTO ...
Johannesson, Daniel,   +3 more
core   +1 more source

Design and Measurement of a Frequency Converter with SPWM Modulation of Output Voltage for a Two-Phase Induction Motor

open access: yesElektronika ir Elektrotechnika, 2023
This paper deals with the design, implementation, and measurements of a frequency converter with bipolar sinusoidal pulse width modulation (SPWM) of output voltage for two-phase induction motors.
Jan Kanuch   +3 more
doaj   +1 more source

Investigation and improvement of single-event burn-out in 4H-SiC trench insulated gate bipolar transistors

open access: yesResults in Physics, 2021
In this paper, the triggering process for single-event burnout (SEB) in conventional 4H-SiC trench insulated gate bipolar transistors (C-TIGBTs) is described. Furthermore, SEB is studied for both a conventional structure and a new structure.
Yan-juan Liu   +3 more
doaj   +1 more source

Impact of the collector structure on the performance of the insulated gate bipolar transistor [PDF]

open access: yesMicroelectronics Journal
Various types of collectors have been reported for insulated-gate bipolar transistors (IGBTs). Despite their importance however, a thorough study on the influence of the collector structure on the performance of the IGBT is lacking in literature. In this
Jeroen van Zoeren   +4 more
openaire   +3 more sources

Effect of Liquid Coolant Channel Configuration on Cooling Performance of High Power Electronics [PDF]

open access: yes한국정밀공학회지, 2021
Power electronic systems have been widely applied in both industrial and domestic applications in the modern society for controlling and converting electrical energy. Due to their characteristics, such as excellent performance, low cost, high reliability,
Jaehyun Park   +3 more
doaj   +1 more source

Design, Analysis and Experimental Verification of the Self-Resonant Inverter for Induction Heating Crucible Melting Furnace Based on IGBTs Connected in Parallel

open access: yesElectricity, 2021
The object of this research was a self-resonated inverter, based on paralleled Insulated-Gate Bipolar Transistors (IGBTs), for high-frequency induction heating equipment, operating in a wide range of output powers, applicable for research and industrial ...
Borislav Dimitrov   +3 more
doaj   +1 more source

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