Results 11 to 20 of about 585,541 (220)
Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation
Transport and Telecommunication, 2015 The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed.
Krainyukov Alexander, Kutev Valery
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Prognostics for electronics components of avionics - NASA IGBT accelerated ageing case study [PDF]
, 2013 Insulate gate bipolar transistors (IGBTs) are widely used in electric vehicles, railway locomotive and new generation aircrafts, due to the IGBTs have advantages in small conduction resistance and small drive current.
Xie, Yuan'an
core +7 more sources
Neuromorphic Devices and Computing for Sensing, Memory, and Control. [PDF]
Adv Sci (Weinh)This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhu Z, Schaffer N, Yang X.
europepmc +2 more sources
High-performance insulated gate bipolar transistors for soft-switching power converters.
, 2001 High-performance insulated gate bipolar transistors for soft-switching power ...
Malay. Trivedi (7961123)
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Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine [PDF]
, 2003 The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon emitter NPN bipolar transistors have been examined. Forward Gummel plots, base emitter (BE) diode characteristics, and stress currents were measured during ...
Sheng, S R +5 more
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Results in Physics, 2021 In this paper, the triggering process for single-event burnout (SEB) in conventional 4H-SiC trench insulated gate bipolar transistors (C-TIGBTs) is described. Furthermore, SEB is studied for both a conventional structure and a new structure.
Yan-juan Liu +3 more
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Electricity, 2021 The object of this research was a self-resonated inverter, based on paralleled Insulated-Gate Bipolar Transistors (IGBTs), for high-frequency induction heating equipment, operating in a wide range of output powers, applicable for research and industrial ...
Borislav Dimitrov +3 more
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Electrical engineering & Electromechanics, 2023 Introduction. Recently, the number of high and medium voltage applications has increased dramatically. The connection between these different applications requires series-parallel combinations of power semiconductors.
A. Abdellah, M. Larbi, D. Toumi
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IEEE Access, 2023 Stress imbalance significantly affects the performance of a press-pack insulated gate bipolar transistor (IGBT). Time-variant loads and conditions lead to the stress fluctuations, exacerbating the impacts.
Hangyang Li +6 more
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Advances in Mechanical Engineering, 2017 This article deals with incipient fault of insulated-gate bipolar transistors to improve the safety of traction systems of China Railway High-speed 5. Combining with the pulse width modulated strategy which makes signals variate periodically, the multi ...
Hongtian Chen +3 more
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