Results 51 to 60 of about 17,120 (221)

Four Hybrid Gates SOI Lateral Insulated Gate Bipolar Transistor With Improved Carrier Controllability

open access: yesIEEE Journal of the Electron Devices Society, 2023
Easy inter-connection is a crucial advantage of the single-chip power ICs, which makes power devices with multiple ports easy to improve carrier controllability without increasing process difficulty.
Jie Ma   +8 more
doaj   +1 more source

The Fault Detection, Localization, and Tolerant Operation of Modular Multilevel Converters with an Insulated Gate Bipolar Transistor (IGBT) Open Circuit Fault

open access: yes, 2018
Reliability is one of the critical issues for a modular multilevel converter (MMC) since it consists of a large number of series-connected power electronics submodules (SMs).
Wei Li   +5 more
semanticscholar   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

open access: yesAdvanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang   +5 more
wiley   +1 more source

Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar

open access: yesIEEE Journal of the Electron Devices Society, 2016
This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang   +4 more
doaj   +1 more source

Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode

open access: yesEnergies, 2020
This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode.
Paweł Górecki, Krzysztof Górecki
doaj   +1 more source

Adjoint method for the optimization of insulated gate bipolar transistors [PDF]

open access: yesAIP Advances, 2019
A mathematical algorithm is presented for the computation of optimum doping profiles that maximize the breakdown voltage and on-state current in insulated gate bipolar transistors (IGBT). The algorithm is based on the evaluation of doping sensitivity functions, which are defined as the functional derivatives of the breakdown voltage and on-state ...
C. Zhu, P. Andrei
openaire   +2 more sources

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

open access: yesAdvanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen   +9 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

open access: yesAdvanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim   +6 more
wiley   +1 more source

Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode–Transistor Switch to Compute the Characteristics of the Boost Converter

open access: yesEnergies, 2020
In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
doaj   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

open access: yesAdvanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

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