Results 71 to 80 of about 2,204 (218)

Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules:Detection, estimation, and prediction [PDF]

, 2021
The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power electronics converters. In order to improve the reliability of IGBTs, various measurements are taken according to the condition monitoring (CM) technique ...
Zha, Xiaoming, Wang, Haoran, Huang, Meng, Li, Kang, Bai, Ju, Bai, Liangjun   +5 more
core   +1 more source

Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode–Transistor Switch to Compute the Characteristics of the Boost Converter

Energies, 2020
In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state ...
Paweł Górecki, Krzysztof Górecki
doaj   +1 more source

Electroencephalogram‐Driven Recognition of Parkinson's Disease Through a Mycelium‐Inspired Memristive Reservoir Computing Circuit

Advanced Intelligent Systems, EarlyView.
This work presents a bio‐inspired computing framework for Parkinson's disease analog recognition using electroencephalogram signals. Temporally encoded EEG features stimulate a mycelium‐inspired memristive reservoir, where disease‐related patterns emerge through physical spatiotemporal dynamics.
Ioannis K. Chatzipaschalis, Ioannis Tompris, Pantelis Fraidakis, Iosif‐Angelos Fyrigos, Antonio Rubio, Georgios Ch. Sirakoulis   +5 more
wiley   +1 more source

A Novel Bipolar DC Connection Strategy for Photovoltaic Power Plants With a 50% Reduction in DC Cabling Length

Energy Science &Engineering, EarlyView.
Bipolar configuration is a new topology in the direct current (DC) system of photovoltaic power plants, which is topologically analogous to the bipolar configuration utilised in High‐Voltage Direct Current power transmission systems. DC cable length and copper usage are reduced by 50% using a bipolar configuration.
Duško M. Tovilović, Željko R. Đurišić, Vladan R. Durković   +2 more
wiley   +1 more source

Analysis of Trench Insulated Gate Bipolar Transistors

, 2016
This thesis is focused on the selection and optimalization of suitable analytical methods for study of TIGBT (Trench Insulated Gate Bipolar Transistor) structures with a use of methods, that depict material composition of the studied sample.
Karlovský, Juraj
core   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, EarlyView.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs

Crystals, 2020
The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
doaj   +1 more source

Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation

Small, EarlyView.
An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn, Do Kyeong Yun, Mi Hyang Park, Hong Woon Yun, Minh Chien Nguyen, Van Tu Vu, Huamin Li, Pallavi Aggarwal, Woo Jong Yu   +8 more
wiley   +1 more source

Thermomechanical Reliability Investigation of Insulated Gate Bipolar Transistor Module

, 2018
Though, significant efforts have led to high solder joint quality, thermomechanical fatigue and delamination of the solder joints are still considered as one main failure cause in Insulated Gate Bipolar Transistor (IGBT) power modules.
Khatibi, Golta, Czerny, Bernhard, Nicolics, Johann, Liedtke, Magnus, Magnus Liedtke, Bernhard Czerny, Golta Khatibi, Johann Nicolics   +7 more
core   +1 more source