Results 71 to 80 of about 17,120 (221)
Bio‐inspired vision: From principle, material architectures to system‐level integration
FlexMat, EarlyView.This review introduces the development and mechanism of electronic and ionic bio‐inspired vision devices respectively. Then, it explores the impact of structure on bio‐inspired visual performance from the scale of intrinsic materials and device. Finally, it concludes that only by combining advanced software and technology can more complex vision ...
Zewan Lin +4 more
wiley +1 more source
Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film
IEEE Journal of the Electron Devices Society, 2020 A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
doaj +1 more source
Interdisciplinary Materials, EarlyView.Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu +3 more
wiley +1 more source
Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6
Information &Functional Materials, EarlyView.The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li +7 more
wiley +1 more source
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Structural Features and Recent Progress of Super Junction IGBT
机车电传动, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj
Organic electrochemical transistor‐based tactile perception: From sensing to neuromorphic processing
InfoMat, EarlyView.Organic electrochemical transistors (OECTs) offer a unique platform for tactile perception electronics by coupling ionic and electronic transport. This review highlights recent advances in OECT‐based temperature and pressure sensing, emphasizing material design, device architectures, operating mechanisms, and fabrication strategies toward flexible ...
Xuefeng Zhang +10 more
wiley +1 more source
International Journal of Robust and Nonlinear Control, EarlyView.ABSTRACT Induction motors (IMs) are widely used in industry for their robustness and cost‐effectiveness, yet their nonlinear and multivariable dynamics pose significant challenges for high‐performance speed control. Model Predictive Control (MPC) is a well‐established solution but suffers from limitations related to model accuracy and parameter ...
Asier del Rio +4 more
wiley +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim +2 more
doaj
Energies, 2019 The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working ...
Qingyi Kong +4 more
doaj +1 more source