Results 71 to 80 of about 575,300 (214)
Bio‐inspired vision: From principle, material architectures to system‐level integration
FlexMat, EarlyView.This review introduces the development and mechanism of electronic and ionic bio‐inspired vision devices respectively. Then, it explores the impact of structure on bio‐inspired visual performance from the scale of intrinsic materials and device. Finally, it concludes that only by combining advanced software and technology can more complex vision ...
Zewan Lin +4 more
wiley +1 more source
Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film
IEEE Journal of the Electron Devices Society, 2020 A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
doaj +1 more source
FlexMat, EarlyView.Abstract Imagers operating in the visible to near‐infrared (NIR) range play an important role in applications such as industrial sorting, security surveillance, and autonomous driving. However, conventional imaging technologies based on silicon and III–V semiconductors suffer from several limits, including restricted spectral range, high fabrication ...
Xin Hong +4 more
wiley +1 more source
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
FlexMat, EarlyView.A flexible piezoelectric tactile sensor array is developed by integrating polyvinylidene fluoride sensing elements with dual‐gate indium‐tin‐zinc oxide thin‐film transistor‐based pixel amplifiers. Direct coupling to the high‐impedance gate minimizes signal loss, enabling twofold voltage amplification and an extended effective relaxation time of ∼4.86 s
Tengteng Lei +4 more
wiley +1 more source
Structural Features and Recent Progress of Super Junction IGBT
机车电传动, 2021 With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj
Spatiotemporal engineering of dynamic color in alternating‐current‐driven light‐emitting devices
FlexMat, EarlyView.This review presents a mechanism‐driven framework for spectral tuning in alternating‐current‐driven light‐emitting devices, systematically integrating emissive center engineering, device architecture design, and driving signal modulation. By linking microscopic carrier dynamics and electric‐field‐charge interactions with macroscopic spectral evolution,
Yuyue Yang +3 more
wiley +1 more source
, 2019 We studied the effects of gamma-ray irradiation on the static and dynamic electrical characteristics of a trench-gate non-punch-through insulated gate bipolar transistor (IGBT) device.
Sun, Gwang Min +3 more
core +1 more source
InfoMat, EarlyView.This review offers an overview of recent advances in the fundamental properties, synthesis methods, and structural optimization of transition‐metal single‐atom electrocatalysts for electrochemical sensing. It also provides a comprehensive summary of the emerging applications in electrochemical assays based on these materials, along with key challenges ...
Yue Cao +8 more
wiley +1 more source
Steady-state analytical model for the trench insulated gate bipolar transistor
, 1995 A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e.
Udrea, F, Amaratunga, GAJ, ,
core