Results 71 to 80 of about 545,104 (231)

Perovskite Photodetectors at the Intelligence Frontier: From Tunable Materials to Adaptive Optoelectronic Systems

Carbon Energy, EarlyView.
This comprehensive review presents a progressive roadmap for perovskite vision detectors. Centered on perovskite‐based artificial perception, the graphic illustrates a systematic evolution: starting with fundamental material engineering and device architectures, advancing toward complex functional strategies such as flexible neuromorphic imaging ...
Chenglong Li, Wei Qu, Deepak Kumar, Naini Jain, Nur Wardina Syahirah binti Mohamad Fadil, Nur Najiha binti Ahmad Rasid, Emannuel Kymakis, Maria Vasilopoulou, Chunxiong Bao, Feng Gao, Peng Gao, Sanjeev Kumar Sharma, Mohammad Khaja Nazeeruddin, Abd. Rashid bin Mohd Yusoff, Haotong Wei   +14 more
wiley   +1 more source

A Self-Aligned Trenched Cathode Lateral Insulated Gate Bipolar Transistor with High Latch-Up Resistance

, 1995
This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n+ cathode region to ...
Nezar, Azzouz, Salama, C. André T., Mok, Philip K.T.   +2 more
core   +1 more source

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

IEEE Journal of the Electron Devices Society, 2020
A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
doaj   +1 more source

Hybrid Inverters With Dual Switching Frequencies for Switched Reluctance Motors

Energy Science &Engineering, EarlyView.
A hybrid dual‐switching‐frequency inverter for SRMs is proposed, combining SiC and IGBT devices based on rotor inductance. The method enables accurate current tracking with simple hysteresis control, significantly reducing torque ripple, vibration, and acoustic noise while cutting inverter cost compared to full‐SiC solutions.
Fares S. El‐Faouri, Majd G. Batarseh, Hamzeh J. Jaber, Ayman Faza, Wejdan Abu Elhaija   +4 more
wiley   +1 more source

Design of insulated gate bipolar transistor using novel structure

, 2002
In this work, Lateral Insulated Gate Bipolar Transistor (LIGBT) based on a novel structure of partial Silicon On Insulator (partial SOI) has been designed. The position of the silicon window has been determined by comparing the simulation results of full
Zhang, Guowei
core  

Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

, 2010
We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully
Tan, L., Redman-White, W., Ashburn, P., S. Connor, Hall, S., M. M. A. Hakim, Abuelgasim, A., L. Tan, K. Mallik, W. Redman-White, de Groot, C.H., C. H. de Groot, A. Bousquet, Hakim, M.M.A., A. Abuelgasim, S. Hall, P. Ashburn   +16 more
core   +1 more source

IGBTs: Concept, Development and New Structures

Kongzhi Yu Xinxi Jishu, 2017
The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj  

Bio‐inspired vision: From principle, material architectures to system‐level integration

FlexMat, EarlyView.
This review introduces the development and mechanism of electronic and ionic bio‐inspired vision devices respectively. Then, it explores the impact of structure on bio‐inspired visual performance from the scale of intrinsic materials and device. Finally, it concludes that only by combining advanced software and technology can more complex vision ...
Zewan Lin, Miaoyi Xu, Xianda Ma, Weifeng Yang, Yuanlong Shao   +4 more
wiley   +1 more source

Thermomechanical Reliability Investigation of Insulated Gate Bipolar Transistor Module

, 2018
Though, significant efforts have led to high solder joint quality, thermomechanical fatigue and delamination of the solder joints are still considered as one main failure cause in Insulated Gate Bipolar Transistor (IGBT) power modules.
Khatibi, Golta, Czerny, Bernhard, Nicolics, Johann, Liedtke, Magnus, Magnus Liedtke, Bernhard Czerny, Golta Khatibi, Johann Nicolics   +7 more
core   +1 more source

Physics‐based insulated‐gate bipolar transistor model with input capacitance correction [PDF]

, 2018
Insulated‐gate bipolar transistor (IGBT) terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling is a difficult task because of their operating‐point‐dependent characteristics.

core   +2 more sources