Results 81 to 90 of about 575,300 (214)
Organic neuromorphic optoelectronic sensing materials, intelligent devices, and bionic systems
InfoMat, EarlyView.Due to the excellent performance and biocompatibility, organic neuromorphic photoelectric sensing technology is regarded as a highly promising research field. In this review, Liu et al. summarize the recent advances in related materials, devices, and system integration.
Yu‐ang Liu +4 more
wiley +1 more source
Energies, 2019 The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working ...
Qingyi Kong +4 more
doaj +1 more source
2-D modelling and optimisation of trench insulated gate bipolar transistors (TIGBT)
, 2014 A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extensive numerical simulations, analytical modeling using a mathematically developed PIN diode-PNP transistor model and optimisation of Trench IGBTs are ...
Udrea, F, Amaratunga, GAJ, ,
core
Modeling the turn-off characteristics of insulated-gate bipolar transistor
, 2012 [[abstract]]In this paper, a more accurate model for obtaining the turn-off current of insulated-gate bipolar transistors (IGBT) is proposed which shows that the tom-off current is overestimated in the previous models.
Huang, Tsung-Yi;Gong, Jeng;Chen, Shin-Hui
core +1 more source
MXene‐Based Flexible Memory and Neuromorphic Devices
Small, EarlyView.The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li +13 more
wiley +1 more source
2-D modelling and optimisation of trench insulated gate bipolar transistors (TIGBT)
, 1996 A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extensive numerical simulations, analytical modeling using a mathematically developed PIN diode-PNP transistor model and optimisation of Trench IGBTs are ...
Udrea, F, Amaratunga, GAJ, ,
core
Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
Small, EarlyView.An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn +8 more
wiley +1 more source
Small Current Measurements with Insulated Gate Field Effect Transistor Electrometers [PDF]
, 1966 Small current measurements with insulated-gate field effect transistor ...
Homiller, W. T.
core
Small, EarlyView.Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
, 2020 International audienceWith the continuous miniaturization and rapid increase in the power ratings of an insulated-gate bipolar transistor (IGBT), the exact junction temperature becomes one of the critical performance parameters in evaluating the ...
Ren, Zhuoxiang +2 more
core +1 more source