Results 81 to 90 of about 2,204 (218)
IEEE Access, 2020 Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online
Xiangxiang Liu +4 more
doaj +1 more source
Small, EarlyView.Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector
IEEE Journal of the Electron Devices Society, 2020 In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff).
Ying Wang +6 more
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Recent advances in organic broad‐spectrum photodetection materials and devices
InfoMat, Volume 8, Issue 6, June 2026.This review systematically outlines the evolution of organic photodetectors from fullerene‐based to advanced non‐fullerene acceptors, highlighting how molecular engineering (e.g., D–A, quinoidal, and A‐D‐A′‐D‐A architectures) extends spectral response into the short‐wave infrared region.
Yilin Zhao +3 more
wiley +1 more source
Reliability evaluation of MMC system considering working conditions
The Journal of Engineering, 2018 The reliability is a key issue of the high-voltage high-power modular multilevel converter (MMC) system due to the usage of fragile insulated gate bipolar transistor (IGBT) modules. In this study, it is proposed that the reliability of the MMC system can
Tao Zheng +3 more
doaj +1 more source
Parametric Model Order Reduction by Box Clustering With Applications in Mechatronic Systems
International Journal for Numerical Methods in Engineering, Volume 127, Issue 10, 30 May 2026.ABSTRACT High temperatures and structural deformations can compromise the functionality and reliability of new components for mechatronic systems. Therefore, high‐fidelity simulations (HFS) are employed during the design process, as they enable a detailed analysis of the thermal and structural behavior of the system.
Juan Angelo Vargas‐Fajardo +4 more
wiley +1 more source
IGBTs: Concept, Development and New Structures
Kongzhi Yu Xinxi Jishu, 2017 The insulated gate bipolar transistor (IGBT) is arguably the most innovative power device today. It is the only device concept known today that incorporates in a single cell a MOSFET with a bipolar junction transistor, whereby both devices are active in ...
Florin Udrea
doaj
Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film
IEEE Journal of the Electron Devices Society, 2020 A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating ...
Weizhen Chen, Junji Cheng
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ChemElectroChem, Volume 13, Issue 9, 5 May 2026.Electrochemical memristive devices, whose resistance is modulated by ion migration and redox reactions, offer a hardware pathway toward brain‐inspired computing. This review summarizes key switching mechanisms—electrochemical metallization (ECM), valence change mechanism (VCM), and thermochemical effects (TCM)—and discusses how materials and device ...
Junyao Xu, Yiwei Sun
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Advanced Functional Materials, Volume 36, Issue 36, 4 May 2026.Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon +6 more
wiley +1 more source