Results 81 to 90 of about 545,104 (231)
Structural Features and Recent Progress of Super Junction IGBT
With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj
Abstract Imagers operating in the visible to near‐infrared (NIR) range play an important role in applications such as industrial sorting, security surveillance, and autonomous driving. However, conventional imaging technologies based on silicon and III–V semiconductors suffer from several limits, including restricted spectral range, high fabrication ...
Xin Hong +4 more
wiley +1 more source
This review offers an overview of recent advances in the fundamental properties, synthesis methods, and structural optimization of transition‐metal single‐atom electrocatalysts for electrochemical sensing. It also provides a comprehensive summary of the emerging applications in electrochemical assays based on these materials, along with key challenges ...
Yue Cao +8 more
wiley +1 more source
Organic neuromorphic optoelectronic sensing materials, intelligent devices, and bionic systems
Due to the excellent performance and biocompatibility, organic neuromorphic photoelectric sensing technology is regarded as a highly promising research field. In this review, Liu et al. summarize the recent advances in related materials, devices, and system integration.
Yu‐ang Liu +4 more
wiley +1 more source
The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working ...
Qingyi Kong +4 more
doaj +1 more source
Insulated-gate bipolar transistor failure mode recognition
Tässä työssä on esitetty malli eristetyllä hilalla varustetun bipolaaritransistorin eli IGBT:n vikaantumisien systemaattiseen tutkimiseen taajuusmuuttajalaboratoriossa pienitehoisille taajuusmuuttajille käyttäen vikapuudiagrammia.
Hämäläinen, Juho
core +1 more source
MXene‐Based Flexible Memory and Neuromorphic Devices
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li +13 more
wiley +1 more source
Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn +8 more
wiley +1 more source
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P. +6 more
core +1 more source

