Results 101 to 110 of about 545,104 (231)

Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley   +1 more source

A Fixed‐Charge Interphase Synchronizes Ion Transport to Suppress Space‐Charge‐Driven Inefficiency Under Nanoliter Confinement

Angewandte Chemie International Edition, Volume 65, Issue 36, 1 September 2026.
Electrochemical energy storage breaks down under extreme miniaturization, where interfaces and space‐charge dominate device behavior. This work introduces a fixed‐charge selective interphase (FCSI) integrated into a twin‐tube micro‐Swiss‐roll architecture.
Yaping Yan, Jiachen Ma, Wenlan Zhang, Hongmei Tang, Yue Li, Ruhuai Mei, Yang Huang, Daniil Karnaushenko, Dmitriy D. Karnaushenko, Yumin Luo, Kai Zhang, Oliver G. Schmidt, Minshen Zhu   +12 more
wiley   +1 more source

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

A Novel Bipolar DC Connection Strategy for Photovoltaic Power Plants With a 50% Reduction in DC Cabling Length

Energy Science &Engineering, Volume 14, Issue 9, Page 4230-4247, September 2026.
Bipolar configuration is a new topology in the direct current (DC) system of photovoltaic power plants, which is topologically analogous to the bipolar configuration utilised in High‐Voltage Direct Current power transmission systems. DC cable length and copper usage are reduced by 50% using a bipolar configuration.
Duško M. Tovilović, Željko R. Đurišić, Vladan R. Durković   +2 more
wiley   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

A superjunction insulated Gate Bipolar Transistor with bilateral HK insulators: A solution to charge imbalance

, 2014
A superjunction (SJ) IGBT(Insulated Gate Bipolar Transistor) with bilateral HK (high permittivity) insulators(BHK-SJ-IGBT) is proposed. In the OFF-state, the n/p pillars are not only depleted by each other, but also by the bilateral HK capacitors ...
Wei, Hang, Frank X.C. Jiang, Jiang, Frank X.C., Hang Wei, Xinnan Lin, Lin, Xinnan   +5 more
core   +1 more source

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo, Yuehao Li, Xiangkai Liu, Chao Tan, Guohua Hu, Mingdong Dong, Zegao Wang   +6 more
wiley   +1 more source

Small Current Measurements with Insulated Gate Field Effect Transistor Electrometers [PDF]

, 1966
Small current measurements with insulated-gate field effect transistor ...
Homiller, W. T.
core  

Lateral Insulated-Gate Bipolar Transistor (LIGBT) with a Segmented Anode Structure

, 1991
A new lateral insulated-gate bipolar transistor (LIGBT) structure, called the segmented anode LIGBT, is presented. In this structure, the anode, which is responsible for the injection of minority carriers for conductivity modulation, is implemented using
Mukherjee, Satyen, Sin, Johnny K.O.
core   +1 more source

INSULATED GATE BIPOLAR TRANSISTOR TEMPERATURE CALCULATION USING SIMSCAPE/SIMULINK ENVIRONMENT WITH VARIOUS SWITCHING FREQUENCY

Journal of Engineering and Sustainable Development
Because of developments in high-power converters, it has become crucial to investigate how effective inverter performance is. consequently, via being aware of the temperature value of the junction for the inverter switch.
Ahmed Shihab Ahmed, Riyadh Ghanim Omar
doaj   +1 more source