Results 101 to 110 of about 2,204 (218)

INSULATED GATE BIPOLAR TRANSISTOR TEMPERATURE CALCULATION USING SIMSCAPE/SIMULINK ENVIRONMENT WITH VARIOUS SWITCHING FREQUENCY

Journal of Engineering and Sustainable Development
Because of developments in high-power converters, it has become crucial to investigate how effective inverter performance is. consequently, via being aware of the temperature value of the junction for the inverter switch.
Ahmed Shihab Ahmed, Riyadh Ghanim Omar
doaj   +1 more source

200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics

, 2013
This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator.
Pilkington, SJ, Antoniou, M, Udrea, F, Tee, EKC, Holke, A, Yew, NL, Pal, DK, Abidin, WABWZ, ,   +8 more
core  

Insulated-gate bipolar transistor formed in the bulk silicon and using «Silicon on insulator» technology

, 2020
Представлены результаты оптимизации конструктивно-технологических параметров приборных структур биполярного транзистора с изолированным затвором (БТИЗ), сформированного в стандартном кремнии и по технологии «Кремний на изоляторе» (КНИ ...
Stempitsky, V. R., Lovshenko, I. Yu., Ловшенко, И. Ю., Shelibak, I., Шелибак, И., Стемпицкий, В. Р.   +5 more
core  

2-D modelling and optimisation of trench insulated gate bipolar transistors (TIGBT)

, 2014
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extensive numerical simulations, analytical modeling using a mathematically developed PIN diode-PNP transistor model and optimisation of Trench IGBTs are ...
Udrea, F, Amaratunga, GAJ, ,
core  

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

, 2009
International audienceIn the paper proposed here, we are studying the dynamic avalanche from experimental results first, dynamic avalanche is identified on a punch through insulated gate bipolar transistor (PT-IGBT) module 1200V-300 A from Mitsubishi ...
Planson, Dominique, Morel, Hervé, Bergogne, Dominique, Lefranc, Pierre   +3 more
core   +1 more source

2-D modelling and optimisation of trench insulated gate bipolar transistors (TIGBT)

, 1996
A 2-D theoretical study for the Trench Insulated Gate Bipolar Transistor (IGBT) is performed. Extensive numerical simulations, analytical modeling using a mathematically developed PIN diode-PNP transistor model and optimisation of Trench IGBTs are ...
Udrea, F, Amaratunga, GAJ, ,
core  

Design, Simulation and Modeling of Insulated Gate Bipolar Transistor [PDF]

, 2013
The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT.
Gupta, Kaustubh
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A snapback-free shorted-anode insulated gate bipolar transistor with an N-path structure

, 2015
A snapback-free field stop shorted-anode insulated gate bipolar transistor (SA-IGBT) with an N-path structure is proposed for the first time in this paper.
Jiang, Frank X. C., Meng, Hang, Chen, Jian, Lin, Xinnan   +3 more
core   +1 more source

Trench insulated gate bipolar transistor - a high power switching device

, 1995
This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and ...
Amaratunga, G, Udrea, F, ,
core  

Analytical Model For The Insulated-Gate Bipolar Transistor Under All Free-Carrier Injection Conditions

, 1996
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device.
Liou, J. J., Yue, Y., Batarseh, I.
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