Results 101 to 110 of about 575,300 (214)
, 2013 Consulta en la Biblioteca ETSI Industriales (9059)Martínez Feliu, F. (2012). Desarrollo de un modelo electro-termo-mecánico mediante análisis por elementos finitos y calibración vía resultados experimentales de una IGBT (Insulated Gate Bipolar Transistor)
Martínez Feliu, Francisco
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An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor
, 2009 An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article.
Zhongfu Zhou +3 more
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Insulated-gate bipolar transistor failure mode recognition
, 2018 Tässä työssä on esitetty malli eristetyllä hilalla varustetun bipolaaritransistorin eli IGBT:n vikaantumisien systemaattiseen tutkimiseen taajuusmuuttajalaboratoriossa pienitehoisille taajuusmuuttajille käyttäen vikapuudiagrammia.
Hämäläinen, Juho
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, 1996 The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device.
Liou, J. J., Yue, Y., Batarseh, I.
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Physics-based insulated-gate bipolar transistor model with input capacitance correction
, 2015 Insulated-gate bipolar transistor (IGBT) terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling is a difficult task because of their operating-point-dependent characteristics.
Palmer, PR, Otsuki, M, ,, Yang, X
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, 2013 This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator.
Pilkington, SJ +8 more
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Insulated gate bipolar transistor (IGBT) simulation using IG-Spice
, 2010 A physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice.
Mitter, Chang Su
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Etude d’un transistor bipolaire à grille isolée
, 2014 مذكرة ليسانس تخصص اتصالاتPlusieurs dispositifs de puissance sont commercialisés couvrant une large gamme de puissance électrique et de tension de claquage.
OUABRI, Hicham, OUADA, Amin
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, 2020 Представлены результаты оптимизации конструктивно-технологических параметров приборных структур биполярного транзистора с изолированным затвором (БТИЗ), сформированного в стандартном кремнии и по технологии «Кремний на изоляторе» (КНИ ...
Stempitsky, V. R. +5 more
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Research on the Press-pack IGBT with High SCSOA
Kongzhi Yu Xinxi Jishu, 2017 DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing +5 more
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