Results 91 to 100 of about 575,300 (214)

A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer. [PDF]

Micromachines (Basel), 2023
Wang Z, Yang C, Huang X.
europepmc   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, Volume 36, Issue 88, 2 November 2026.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions

, 1996
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the steady-state and transient characteristics of such a device.
I. Batarseh, Liou, J. J., Yue, Y., Y. Yue, J.J. Liou, Batarseh, I.   +5 more
core   +2 more sources

Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT

Eletrônica de Potência
The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost.
Pedro H. G. Vilela , Edmar F. Cota, Heverton A. Pereira, Tomás P. Corrêa, Allan F. Cupertino   +4 more
doaj   +1 more source

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network. [PDF]

Micromachines (Basel), 2021
Yao Q, Guo Y, Zhang B, Chen J, Zhang J, Zhang M, Guo X, Yao J, Tang W, Liu J.   +9 more
europepmc   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, Volume 13, Issue 61, 3 November 2026.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source

Design, Simulation and Fabrication of Insulated Gate Bipolar Transistors (IGBT) [PDF]

, 2003
This project serves as a study to determine the feasibility of the current CMOS toolsets and processes available at Semiconductor \u26 Microsystems Fabrication Laboratory (SMFL) for the fabrication of whole wafer power devices.
Jhaveri, Tejas K
core  

Thermomechanical Reliability Investigation of Insulated Gate Bipolar Transistor Module

, 2018
Though, significant efforts have led to high solder joint quality, thermomechanical fatigue and delamination of the solder joints are still considered as one main failure cause in Insulated Gate Bipolar Transistor (IGBT) power modules.
Khatibi, Golta, Czerny, Bernhard, Nicolics, Johann, Liedtke, Magnus, Magnus Liedtke, Bernhard Czerny, Golta Khatibi, Johann Nicolics   +7 more
core   +1 more source

High-performance insulated gate bipolar transistors for soft-switching power converters.

, 2001
High-performance insulated gate bipolar transistors for soft-switching power ...
Malay. Trivedi (7961123)
core   +4 more sources

INSULATED GATE BIPOLAR TRANSISTOR TEMPERATURE CALCULATION USING SIMSCAPE/SIMULINK ENVIRONMENT WITH VARIOUS SWITCHING FREQUENCY

Journal of Engineering and Sustainable Development
Because of developments in high-power converters, it has become crucial to investigate how effective inverter performance is. consequently, via being aware of the temperature value of the junction for the inverter switch.
Ahmed Shihab Ahmed, Riyadh Ghanim Omar
doaj   +1 more source