Results 91 to 100 of about 2,204 (218)

Structural Features and Recent Progress of Super Junction IGBT

机车电传动, 2021
With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj  

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Energies, 2019
The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working ...
Qingyi Kong, Mingxing Du, Ziwei Ouyang, Kexin Wei, William Gerard Hurley   +4 more
doaj   +1 more source

Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT

Eletrônica de Potência
The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost.
Pedro H. G. Vilela , Edmar F. Cota, Heverton A. Pereira, Tomás P. Corrêa, Allan F. Cupertino   +4 more
doaj   +1 more source

A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS

, 1995
International audienceAn effective simulation system with TSUPREM-4 TM and MEDICI TM simulators has been set up in this paper to simulate structures and electrical characteristics, and further to give an optimum design of a power insulated gate bipolar ...
Planson, Dominique, Chante, Jean-Pierre, Zhao, Shan-Qi   +2 more
core   +1 more source

Insulated-gate bipolar transistor failure mode recognition

, 2018
Tässä työssä on esitetty malli eristetyllä hilalla varustetun bipolaaritransistorin eli IGBT:n vikaantumisien systemaattiseen tutkimiseen taajuusmuuttajalaboratoriossa pienitehoisille taajuusmuuttajille käyttäen vikapuudiagrammia.
Hämäläinen, Juho
core  

A superjunction insulated Gate Bipolar Transistor with bilateral HK insulators: A solution to charge imbalance

, 2014
A superjunction (SJ) IGBT(Insulated Gate Bipolar Transistor) with bilateral HK (high permittivity) insulators(BHK-SJ-IGBT) is proposed. In the OFF-state, the n/p pillars are not only depleted by each other, but also by the bilateral HK capacitors ...
Wei, Hang, Frank X.C. Jiang, Jiang, Frank X.C., Hang Wei, Xinnan Lin, Lin, Xinnan   +5 more
core   +1 more source

An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions

, 1996
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the steady-state and transient characteristics of such a device.
I. Batarseh, Liou, J. J., Yue, Y., Y. Yue, J.J. Liou, Batarseh, I.   +5 more
core   +2 more sources

Insulated gate bipolar transistor (IGBT) simulation using IG-Spice

, 2010
A physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice.
Mitter, Chang Su
core  

An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

, 2009
An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article.
Zhongfu Zhou, Petar Igic
core   +1 more source

Simulation study of silicon carbide Clustered Insulated Gate Bipolar Transistor (CIGBT) [PDF]

, 2015
Power semiconductor devices are inevitable parts of a power electronic converter system, with nearly 50% of electricity used in the world controlled by them.
Menon, Kalyani
core