Results 91 to 100 of about 17,120 (221)

In Situ Insulated Gate Bipolar Transistor Junction Temperature Estimation Method via a Bond Wire Degradation Independent Parameter Turn-OFF Vce Overshoot

IEEE transactions on industrial electronics (1982. Print), 2020
Yanyong Yang, Pinjia Zhang
semanticscholar   +1 more source

INSULATED GATE BIPOLAR TRANSISTOR TEMPERATURE CALCULATION USING SIMSCAPE/SIMULINK ENVIRONMENT WITH VARIOUS SWITCHING FREQUENCY

Journal of Engineering and Sustainable Development
Because of developments in high-power converters, it has become crucial to investigate how effective inverter performance is. consequently, via being aware of the temperature value of the junction for the inverter switch.
Ahmed Shihab Ahmed, Riyadh Ghanim Omar
doaj   +1 more source

Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss. [PDF]

Micromachines (Basel), 2019
Mao HK, Wang Y, Wu X, Su FW.
europepmc   +1 more source

Research on the Press-pack IGBT with High SCSOA

Kongzhi Yu Xinxi Jishu, 2017
DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing, ZHAO Ge, JIN Rui, GAO Mingchao, WEN Jialiang, PAN Yan   +5 more
doaj  

The Feasibility and Performance of Thin-Film Thermocouples in Measuring Insulated Gate Bipolar Transistor Temperatures in New Energy Electric Drives. [PDF]

Micromachines (Basel)
Xiang B, Li G, Liu Z.
europepmc   +1 more source

Using Machine Learning and Finite Element Analysis to Extract Traction-Separation Relations at Bonding Wire Interfaces of Insulated Gate Bipolar Transistor Modules. [PDF]

Materials (Basel)
Zhao S, An T, Wang Q, Qin F.
europepmc   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source

Ionomer-Based Ion-Sensitive Field-Effect Transistor for Lithium Ion Sensing. [PDF]

ACS Omega
Colak TO, Kurt M, Yaman E, Demirci Sankir N, Sankir M.   +4 more
europepmc   +1 more source

Impact of the collector structure on the performance of the insulated gate bipolar transistor

Microelectronics Journal
Jeroen van Zoeren, Gaurav Gupta, Boni K. Boksteen, Lis K. Nanver, Raymond J. E. Hueting   +4 more
openaire   +1 more source