Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss. [PDF]
Micromachines (Basel), 2019 Mao HK, Wang Y, Wu X, Su FW.
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Insulated Gate Bipolar Transistor Closed-loop Active Current and Voltage Slope Control
, 2013 IGBT-transistoreita (Insulated Gate Bipolar Transistor) käytetään tehoelektroniikassa kytkinkomponentteina erityisesti teholähteissä ja moottorikäytöissä.
Räisänen, Paula
core
Design, Simulation and Fabrication of Insulated Gate Bipolar Transistors (IGBT)
, 2003 This project serves as a study to determine the feasibility of the current CMOS toolsets and processes available at Semiconductor \u26 Microsystems Fabrication Laboratory (SMFL) for the fabrication of whole wafer power devices.
Jhaveri, Tejas K
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750 A/6 500 V High Power Density IGBT Module for Rail Transit Application
机车电传动, 2016 Low loss is the key for high voltage Insulated Gate Bipolar Transistor (IGBT) design and manufacture. Based on "U"- shape enhanced double diffused metal oxide semiconductor(DMOS+) cell structure, enhanced controllable punch through(CPT+), variation of ...
LIU Guoyou +4 more
doaj
, 2013 Consulta en la Biblioteca ETSI Industriales (9059)Martínez Feliu, F. (2012). Desarrollo de un modelo electro-termo-mecánico mediante análisis por elementos finitos y calibración vía resultados experimentales de una IGBT (Insulated Gate Bipolar Transistor)
Martínez Feliu, Francisco
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The Feasibility and Performance of Thin-Film Thermocouples in Measuring Insulated Gate Bipolar Transistor Temperatures in New Energy Electric Drives. [PDF]
Micromachines (Basel)Xiang B, Li G, Liu Z.
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Using Machine Learning and Finite Element Analysis to Extract Traction-Separation Relations at Bonding Wire Interfaces of Insulated Gate Bipolar Transistor Modules. [PDF]
Materials (Basel)Zhao S, An T, Wang Q, Qin F.
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Modeling And Characterization Of The Insulated Gate Bipolar Transistor In The Near-threshold Region
, 2013 The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the ...
Vandrevala, Farah P.
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Design, fabrication and characterization of a Bi-directional insulated gate bipolar transistor
, 2004 In this paper, a new bi-directional insulated-gate bipolar transistor (BIGBT) is proposed and demonstrated for the first time. The device is fabricated on a double-side polished silicon substrate using a conventional CMOS compatible IGBT technology.
Feng, Chuguang +2 more
core
Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]
Micromachines (Basel)Yang HC +4 more
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