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The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling

IEEE Transactions on Electron Devices, 2010
In this paper, we present a detailed analysis and optimization of the superjunction (SJ) insulated gate bipolar transistor (IGBT). The SJ IGBT is a new device that breaks the IGBT limits, i.e., it delivers performance that is dramatically better. More specifically, we demonstrate here that the optimized SJ IGBT can deliver turn-off losses that are at ...
Florin Udrea   +2 more
exaly   +3 more sources

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