Results 151 to 160 of about 17,120 (221)

Simulation Study of an Injection Enhanced Insulated-Gate Bipolar Transistor With p-Base Schottky Contact

IEEE Transactions on Electron Devices, 2016
Mengxuan Jiang
exaly   +2 more sources

Bipolar Static Induction Transistor With Insulated Gate

IEEE Transactions on Electron Devices, 2022
In this article, we show a simple power device architecture that combines the features of the SIT and the power MOSFET: insulated gate, positive threshold, fast switching, current deep in the semiconductor, and compact design. It has the conduction characteristics of a BSIT, and it is voltage-controlled as a MOSFET.
Colalongo L., Richelli A.
openaire   +1 more source

Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias

2020 6th International Conference on Applied System Innovation (ICASI), 2020
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang, Yi-Syuan Lin, Rung Jin Chang, Han-Ya Yang, Sung-Ching Chi   +4 more
openaire   +1 more source

Remaining useful lifetime prediction of thermally aged power insulated gate bipolar transistor based on Gaussian process regression

Transactions of the Institute of Measurement and Control, 2020
This paper proposes a new approach for power electronic converters faults prognosis under-insulated gate bipolar transistor (IGBT) failures. Power electronic converters such as inverters and rectifiers are crucial parts of most renewable energy systems ...
Adla Ismail, Lotfi Saidi, M. Sayadi, M. Benbouzid   +3 more
semanticscholar   +1 more source

Electrical method to measure the transient thermal impedance of insulated gate bipolar transistor module

IET Power Electronics, 2015
, Guo-Quan Lu
exaly   +2 more sources

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

IEEE transactions on magnetics, 2020
With the continuous miniaturization and rapid increase in the power ratings of an insulated-gate bipolar transistor (IGBT), the exact junction temperature becomes one of the critical performance parameters in evaluating the reliability of the transistor.
Jiajia Chen, Shiyou Yang, Z. Ren
semanticscholar   +1 more source

Latching in lateral insulated gate bipolar transistors

1987 International Electron Devices Meeting, 1987
The maximum gate controllable current of several different lateral insulated gate bipolar transistor (LIGBT) structures have been investigated. It is shown that the turn-on gate resistance affects the latching current of LIGBT's because of the faster turn-on of the lateral current component than the vertical current component. Addition of p+ sinker, n+
T.P. Chow, D.N. Pattanayak, B.J. Baliga, M.S. Adler   +3 more
openaire   +1 more source

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

1987 International Electron Devices Meeting, 1987
This paper describes an improved IGBT with a trench gate structure, which demonstrates a low forward voltage drop of 1.4 volts at a forward conduction current density of 200A/cm2. This device structure was fabricated using a self-aligned process that permits closely spaced vertical trench gates with a unit cell of 8 µm.
H.R. Chang, B.J. Baliga, J.W. Kretchmer, P.A. Piacente   +3 more
openaire   +1 more source

A modular gate drive circuit for insulated gate bipolar transistors

Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 2002
A novel gate drive circuit for insulated gate bipolar transistors (IGBTs) is presented which provides high-speed switching with attention to dV/dt requirements. It also provides pulse-by-pulse overcurrent protection through on-state voltage monitoring while sending out a fault signal to the control circuit.
S.K. Biswas, B. Basak, K.S. Rajashekara
openaire   +1 more source

Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

Materials Science Forum, 2006
The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness
S. Balachandran, T. Paul Chow, Anant K. Agarwal   +2 more
openaire   +1 more source