Results 151 to 160 of about 575,300 (214)

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

IEEE Electron Device Letters, 2015
A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process.
Wentao Yang, Hao Feng, Johnny Kin On Sin
exaly   +2 more sources

Lateral Insulated-Gate Bipolar Transistor (LIGBT) With a Segmented Anode Structure

IEEE Electron Device Letters, 1991
A new lateral insulated-gate bipolar transistor (LIGBT) structure, called the segmented anode LIGBT, is presented. In this structure, the anode, which is responsible for the injection of minority carriers for conductivity modulation, is implemented using
J K O Sin
exaly   +2 more sources

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Insulated gate bipolar transistors

1998
In this chapter, the basic structure and operating characteristics of the IGBT are first described. The analysis of forward and reverse blocking capability is then performed followed by discussion of the on-state characteristics of IGBTs with various collector structures.
EVANS MICHAEL J, IRONS ROBERT C
openaire   +3 more sources

Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias

2020 6th International Conference on Applied System Innovation (ICASI), 2020
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang, Yi-Syuan Lin, Rung Jin Chang, Han-Ya Yang, Sung-Ching Chi   +4 more
openaire   +1 more source

Insulated Gate Bipolar Transistors

2023
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Silicon IGBT (Insulated Gate Bipolar Transistor)

2011
The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
openaire   +1 more source

Overview of Recent Progress in Condition Monitoring for Insulated Gate Bipolar Transistor Modules: Detection, Estimation, and Prediction

High Voltage, 2021
Meng Huang, Xiaoming Zha, Haoran Wang
exaly  

Insulated gate bipolar transistor

2018
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An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)

IEEE Transactions on Power Electronics, 1991
A R Hefner
exaly