Results 141 to 150 of about 17,120 (221)

A Thermal Model for Insulated Gate Bipolar Transistor Module

IEEE Transactions on Power Electronics, 2004
A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/.
null Zhaohui Luo, null Hyungkeun Ahn, M.A.E. Nokali   +2 more
exaly   +3 more sources

Extreme learning machine optimized by whale optimization algorithm using insulated gate bipolar transistor module aging degree evaluation

Expert Systems With Applications, 2019
This study focuses on the aging evaluation of Insulated gate bipolar transistor (IGBT) modules to ensure their stability during operation. An aging degree evaluation model is proposed based on whale optimization algorithm optimized extreme learning ...
Ming Lang Tseng
exaly   +2 more sources

Optimal scale Gaussian process regression model in Insulated Gate Bipolar Transistor remaining life prediction

Applied Soft Computing Journal, 2019
The new energy industry has received extensive attention. The Insulated Gate Bipolar Transistor power module is the core device for new energy equipment, and accurately predicting its remaining useful life (RUL) is conducive to its timely maintenance and
Ming Lang Tseng
exaly   +2 more sources

A dynamic n-buffer insulated gate bipolar transistor

Solid-State Electronics, 2001
Abstract A novel dynamic n-buffer insulated gate bipolar transistor (DB-IGBT) with double gates is proposed and analysed in detail by using two-dimensional numerical simulations. It is found that the turn-off energy loss of this device is reduced and the short-circuit performance is improved significantly compared to the optimised conventional IGBT ...
Florin Udrea, G A J Amaratunga
exaly   +2 more sources

Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review

IEEE Transactions on Power Electronics, 2015
Hyunseok Oh, Byeng D Youn, Bongtae Han
exaly   +2 more sources

Insulated gate bipolar transistor

Reference Module in Materials Science and Materials Engineering, 2018
B. Baliga
openaire   +2 more sources

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

IEEE Electron Device Letters, 2015
Hao Feng, Yuichi Onozawa, Johnny K O Sin   +2 more
exaly   +2 more sources

Renewable energy utilization method: A novel Insulated Gate Bipolar Transistor switching losses prediction model

Journal of Cleaner Production, 2018
, Ming Lang Tseng
exaly   +2 more sources

650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology

IEEE Electron Device Letters, 2022
In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are manufactured.
Yuzhou Wu, Zehong Li, Jia-Kai Pan, Chong Chen, Jiuying Yu, M. Ren, Bo Zhang   +6 more
semanticscholar   +1 more source

An Improved Submodule Topology of MMC With Fault Blocking Capability Based On Reverse-Blocking Insulated Gate Bipolar Transistor

IEEE Transactions on Power Delivery, 2021
The missing capability of DC fault current limitation is an inherent disadvantage in the typical half-bridge modular multilevel converter (MMC), which restricts its application in long-distance high voltage direct current (HVDC) systems.
Yonghui Song, Yongjie Luo, Xiaofu Xiong, F. Blaabjerg, Wei Wang   +4 more
semanticscholar   +1 more source