Results 61 to 70 of about 17,120 (221)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Physics‐Grounded Probabilistic Bits for Hardware‐Efficient Intelligent Inference and Optimization

Advanced Intelligent Systems, EarlyView.
Si–SiNx interface traps are harnessed as a complementary metal–oxide–semiconductor‐compatible source of controllable randomness for probabilistic bits. Pulse‐width‐programmed stochastic capture converts nanoscale defect dynamics into Boltzmann‐consistent binary outputs, while a physics‐based Simulation Program with Integrated Circuit Emphasis model ...
Dokyoung Lee, Jun‐Young Park, Joon‐Kyu Han, Sungho Kim   +3 more
wiley   +1 more source

A Fixed‐Charge Interphase Synchronizes Ion Transport to Suppress Space‐Charge‐Driven Inefficiency Under Nanoliter Confinement

Angewandte Chemie International Edition, EarlyView.
Electrochemical energy storage breaks down under extreme miniaturization, where interfaces and space‐charge dominate device behavior. This work introduces a fixed‐charge selective interphase (FCSI) integrated into a twin‐tube micro‐Swiss‐roll architecture.
Yaping Yan, Jiachen Ma, Wenlan Zhang, Hongmei Tang, Yue Li, Ruhuai Mei, Yang Huang, Daniil Karnaushenko, Dmitriy D. Karnaushenko, Yumin Luo, Kai Zhang, Oliver G. Schmidt, Minshen Zhu   +12 more
wiley   +1 more source

Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs

Crystals, 2020
The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
doaj   +1 more source

Perovskite Photodetectors at the Intelligence Frontier: From Tunable Materials to Adaptive Optoelectronic Systems

Carbon Energy, EarlyView.
This comprehensive review presents a progressive roadmap for perovskite vision detectors. Centered on perovskite‐based artificial perception, the graphic illustrates a systematic evolution: starting with fundamental material engineering and device architectures, advancing toward complex functional strategies such as flexible neuromorphic imaging ...
Chenglong Li, Wei Qu, Deepak Kumar, Naini Jain, Nur Wardina Syahirah binti Mohamad Fadil, Nur Najiha binti Ahmad Rasid, Emannuel Kymakis, Maria Vasilopoulou, Chunxiong Bao, Feng Gao, Peng Gao, Sanjeev Kumar Sharma, Mohammad Khaja Nazeeruddin, Abd. Rashid bin Mohd Yusoff, Haotong Wei   +14 more
wiley   +1 more source

Online Degradation State Assessment Methodology for Multi-Mode Failures of Insulated Gate Bipolar Transistor

IEEE Access, 2020
Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online
Xiangxiang Liu, Lingling Li, Diganta Das, Ijaz Haider Naqvi, Michael G. Pecht   +4 more
doaj   +1 more source

A Novel Bipolar DC Connection Strategy for Photovoltaic Power Plants With a 50% Reduction in DC Cabling Length

Energy Science &Engineering, EarlyView.
Bipolar configuration is a new topology in the direct current (DC) system of photovoltaic power plants, which is topologically analogous to the bipolar configuration utilised in High‐Voltage Direct Current power transmission systems. DC cable length and copper usage are reduced by 50% using a bipolar configuration.
Duško M. Tovilović, Željko R. Đurišić, Vladan R. Durković   +2 more
wiley   +1 more source

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

IEEE Journal of the Electron Devices Society, 2020
In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff).
Ying Wang, Cheng-Hao Yu, Hong-Kai Mao, Xue Wu, Fang-Wen Su, Xing-Ji Li, Jian-Qun Yang   +6 more
doaj   +1 more source

Hybrid Inverters With Dual Switching Frequencies for Switched Reluctance Motors

Energy Science &Engineering, EarlyView.
A hybrid dual‐switching‐frequency inverter for SRMs is proposed, combining SiC and IGBT devices based on rotor inductance. The method enables accurate current tracking with simple hysteresis control, significantly reducing torque ripple, vibration, and acoustic noise while cutting inverter cost compared to full‐SiC solutions.
Fares S. El‐Faouri, Majd G. Batarseh, Hamzeh J. Jaber, Ayman Faza, Wejdan Abu Elhaija   +4 more
wiley   +1 more source

Reliability evaluation of MMC system considering working conditions

The Journal of Engineering, 2018
The reliability is a key issue of the high-voltage high-power modular multilevel converter (MMC) system due to the usage of fragile insulated gate bipolar transistor (IGBT) modules. In this study, it is proposed that the reliability of the MMC system can
Tao Zheng, Meng Huang, Lingyi Zhu, Xiaoming Zha   +3 more
doaj   +1 more source