Results 61 to 70 of about 2,204 (218)
IEEE Journal of the Electron Devices Society, 2023 Easy inter-connection is a crucial advantage of the single-chip power ICs, which makes power devices with multiple ports easy to improve carrier controllability without increasing process difficulty.
Jie Ma +8 more
doaj +1 more source
Advanced Science, EarlyView.Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen +8 more
wiley +1 more source
Adjoint method for the optimization of insulated gate bipolar transistors [PDF]
AIP Advances, 2019 A mathematical algorithm is presented for the computation of optimum doping profiles that maximize the breakdown voltage and on-state current in insulated gate bipolar transistors (IGBT). The algorithm is based on the evaluation of doping sensitivity functions, which are defined as the functional derivatives of the breakdown voltage and on-state ...
C. Zhu, P. Andrei
openaire +2 more sources
Modeling the turn-off characteristics of insulated-gate bipolar transistor
, 2012 [[abstract]]In this paper, a more accurate model for obtaining the turn-off current of insulated-gate bipolar transistors (IGBT) is proposed which shows that the tom-off current is overestimated in the previous models.
Huang, Tsung-Yi;Gong, Jeng;Chen, Shin-Hui
core +1 more source
Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar
IEEE Journal of the Electron Devices Society, 2016 This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode.
Mengxuan Jiang +4 more
doaj +1 more source
Energies, 2020 This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode.
Paweł Górecki, Krzysztof Górecki
doaj +1 more source
Advanced Electronic Materials, EarlyView.Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) [PDF]
, 2009 Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal.
Bakhtiar, Ahmad
core
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
, 1995 This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n+ cathode region to ...
Nezar, Azzouz +2 more
core +1 more source