Results 61 to 70 of about 575,300 (214)
Advanced Science, EarlyView.Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee +5 more
wiley +1 more source
Physics‐based insulated‐gate bipolar transistor model with input capacitance correction [PDF]
, 2018 Insulated‐gate bipolar transistor (IGBT) terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling is a difficult task because of their operating‐point‐dependent characteristics.
core +2 more sources
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs
Crystals, 2020 The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
doaj +1 more source
Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation
Advanced Electronic Materials, EarlyView.A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang +6 more
wiley +1 more source
IEEE Access, 2020 Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online
Xiangxiang Liu +4 more
doaj +1 more source
Carbon Energy, EarlyView.This comprehensive review presents a progressive roadmap for perovskite vision detectors. Centered on perovskite‐based artificial perception, the graphic illustrates a systematic evolution: starting with fundamental material engineering and device architectures, advancing toward complex functional strategies such as flexible neuromorphic imaging ...
Chenglong Li +14 more
wiley +1 more source
Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector
IEEE Journal of the Electron Devices Society, 2020 In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff).
Ying Wang +6 more
doaj +1 more source
A Comprehensive Review of Fault‐Current Limiter Technologies for Smart and Resilient Power Systems
Energy Science &Engineering, EarlyView.This review compares superconducting, solid‐state, and hybrid fault‐current limiters (FCLs) for modern alternating current, direct current, and hybrid grids. It shows that optimal FCL selection depends on fault characteristics, network configuration, voltage level, protection coordination, and resilience requirements rather than on a universally ...
Abdelrahman Farghly +5 more
wiley +1 more source
Reliability evaluation of MMC system considering working conditions
The Journal of Engineering, 2018 The reliability is a key issue of the high-voltage high-power modular multilevel converter (MMC) system due to the usage of fragile insulated gate bipolar transistor (IGBT) modules. In this study, it is proposed that the reliability of the MMC system can
Tao Zheng +3 more
doaj +1 more source