Results 41 to 50 of about 2,204 (218)

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

IEEE Journal of the Electron Devices Society, 2020
A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen, Hao Hu, Yuan Lin, Xing Bi Chen   +3 more
doaj   +1 more source

A geophysical pulse voltage generator for seismic and electric exploration of the subsurface [PDF]

Геосистемы переходных зон, 2021
This article describes the process and results of the development and testing of a cost-effective, portable, safe to move by air geophysical pulse voltage generator for seismic exploration of the subsurface.
Ilia P. Dudchenko, Dmitry V. Kostylev, Sergey A. Gulyakov, Nikolay S. Stovbun   +3 more
doaj   +1 more source

Insights into radiation displacement defect in an insulated-gate bipolar transistor

AIP Advances, 2021
The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using the computer-aided design simulation technology.
Kihyun Kim, Jungsik Kim
doaj   +1 more source

The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Metrology and Measurement Systems, 2015
In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed.
Górecki Krzysztof, Górecki Paweł
doaj   +1 more source

Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

Доклады Белорусского государственного университета информатики и радиоэлектроники
This work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen, Dao Dinh Ha, I. Yu. Lovshenko, V. R. Stempitsky   +3 more
doaj   +1 more source

Evaluation of the turn‐off transient controllability for high‐power IGBT modules

IET Power Electronics, 2022
The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance is influenced by the gate driver control, operating points and the switching ...
Kun Tan, Bing Ji, Jun Wang, Wenjuan Deng, Daohui Li, Zhiqiang Wang, Zheng Liu, Wenping Cao   +7 more
doaj   +1 more source

Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

IEEE Access, 2021
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding ...
Xiangxiang Liu, Tianlei Jiao, Diganta Das, Ijaz Haider Naqvi, Michael Pecht   +4 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Study of quasi-stationary operating modes of a traction drive based on a synchronous-reactive motor with permanent magnets

Вісник Національного технічного університету "ХПÌ". Енергетика: надійність та енергоефективність
The paper analyzes quasi-stationary processes in traction electric drives of subway cars using mathematical models of synchronous jet motors with permanent magnets.
Олександр Миколайович Штомпель
doaj   +1 more source

Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)

IEEE Journal of the Electron Devices Society, 2017
A new type insulated gate bipolar transistor (IGBT) with electron injection (EI-IGBT) is proposed in which an N+-buried layer is implemented in P-base region.
Wanjun Chen, Hong Tao, Lunfei Lou, Chao Liu, Wu Cheng, Xuefeng Tang, Hongquan Liu, Qi Zhou, Xiaochuan Deng, Zhaoji Li, Bo Zhang   +10 more
doaj   +1 more source