Energies, 2017 In the application of vehicle power supply and distributed power generation, there are strict requirements for the pulse width modulation (PWM) converter regarding power density and reliability.
Xianjin Huang +3 more
doaj +1 more source
Investigation of FACTS devices to improve power quality in distribution networks [PDF]
, 2011 Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim +1 more
core +1 more source
Stochastic RUL calculation enhanced with TDNN-based IGBT failure modeling [PDF]
, 2016 Power electronics are widely used in the transport and energy sectors. Hence, the reliability of these power electronic components is critical to reducing the maintenance cost of these assets.
Alghassi, Alireza +2 more
core +1 more source
Methods of high current magnetic field generator for transcranial magnetic stimulation application [PDF]
, 2015 This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications.
Bouda, N. +4 more
core +3 more sources
Design and implementation of 30kW 200/900V LCL modular multilevel based DC/DC converter for high power applications [PDF]
, 2016 This paper presents the design, development and testing of a 30kW, 200V/900V modular multilevel converter (MMC) based DC/DC converter prototype. An internal LCL circuit is used to provide voltage stepping and fault tolerance property.
Aboushady, A. +3 more
core +2 more sources
Scaling Design Effects on Surface Buffer IGBT Characteristics
IEEE Journal of the Electron Devices Society, 2022 Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation.
Wataru Saito, Shin-Ichi Nishizawa
doaj +1 more source
A Novel Shielded IGBT (SIGBT) With Integrated Diodes
IEEE Journal of the Electron Devices Society, 2020 A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen +3 more
doaj +1 more source
A geophysical pulse voltage generator for seismic and electric exploration of the subsurface [PDF]
Геосистемы переходных зон, 2021 This article describes the process and results of the development and testing of a cost-effective, portable, safe to move by air geophysical pulse voltage generator for seismic exploration of the subsurface.
Ilia P. Dudchenko +3 more
doaj +1 more source
Graphene Field Effect Transistors: Diffusion-Drift Theory [PDF]
, 2011 Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed.
Zebrev, Gennady I.
core +2 more sources
Insights into radiation displacement defect in an insulated-gate bipolar transistor
AIP Advances, 2021 The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using the computer-aided design simulation technology.
Kihyun Kim, Jungsik Kim
doaj +1 more source