Results 11 to 20 of about 545,104 (231)
Insulated Gate Bipolar Transistor Solder Layer Defect Detection Research Based on Improved YOLOv5
Applied Sciences, 2022 The expanding market scale of the insulated gate bipolar transistor as a new type of power semiconductor device has higher insulated gate bipolar transistor soldering requirements. However, there are some small bubbles difficult to detect.
Qiying Ling +3 more
doaj +2 more sources
Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
doaj +2 more sources
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
S. Ibrahim +2 more
doaj +1 more source
Neuromorphic Devices and Computing for Sensing, Memory, and Control. [PDF]
Adv Sci (Weinh)This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhu Z, Schaffer N, Yang X.
europepmc +2 more sources
Improving reliability in electric drive systems during IGBT short‐circuit fault
IET Power Electronics, 2021 To improve the reliability of electric drive systems during the insulated‐gate bipolar transistor short‐circuit fault, a control method is proposed for Y‐connected 3‐phase induction motors.
Maryam Naghavi +3 more
doaj +1 more source
Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
IET Circuits, Devices and Systems, 2021 This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT).
Rui Jin +6 more
doaj +1 more source
Transient electrothermal simulation of power semiconductor devices [PDF]
, 2010 In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T. +12 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
doaj +1 more source
Experimental investigation on the single event gate rupture and hardening of the 600 V trench IGBT
AIP Advances, 2021 In this paper, a single particle irradiation experiment is performed on the 600 V trench insulated gate bipolar transistor for the first time. The experimental results show that, at the collector voltages of 100 V and 300 V, single event gate rupture ...
Zhichao Wei +6 more
doaj +1 more source
Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov +2 more
doaj +1 more source