Results 11 to 20 of about 2,204 (218)
Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules. [PDF]
Micromachines (Basel)With the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...]
Liu P, Deng Y.
europepmc +6 more sources
Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Engineering, 2015 Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Luo, Haihui +5 more
core +4 more sources
Insulated Gate Bipolar Transistor Solder Layer Defect Detection Research Based on Improved YOLOv5
Applied Sciences, 2022 The expanding market scale of the insulated gate bipolar transistor as a new type of power semiconductor device has higher insulated gate bipolar transistor soldering requirements. However, there are some small bubbles difficult to detect.
Qiying Ling +3 more
core +2 more sources
A new fin p-body insulated gate bipolar transistor with low miller capacitance
IEEE Electron Device Letters, 2015 A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process.
Tamenori, Akira +5 more
core +2 more sources
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented.
V. R. Stempitsky +2 more
core +1 more source
Integrated Rogowski Coil Sensor for Press-Pack Insulated Gate Bipolar Transistor Chips. [PDF]
Sensors (Basel), 2020 Recently, the press-pack insulated gate bipolar transistor (IGBT) has usually been used in direct current (DC) transmission. The press-pack IGBT (PPI) adopts a parallel layout of boss chips, and the currents of each chip will be uneven in the process of ...
Jiao C, Zhang Z, Zhao Z, Zhang X.
europepmc +2 more sources
Physics-based insulated-gate bipolar transistor model with input capacitance correction
IET Power Electronics, 2015 Insulated-gate bipolar transistor (IGBT) terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling is a difficult task because of their operating-point-dependent characteristics.
Palmer, PR, Otsuki, M, ,, Yang, X
core +1 more source
Analysis of base characteristics of trench gate field termination IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the ...
Wang Bo
doaj +1 more source
Digital-Twin-Driven Intelligent Insulated-Gate Bipolar Transistor Production Lines. [PDF]
Sensors (Basel)With the rapid development of novel energy vehicles, power generation, photovoltaics, and other industries, power electronic devices have gained considerable attention.
Zhang X +6 more
europepmc +2 more sources
Analysis of junction capacitance characteristics of trench gate IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance ...
Wang Bo
doaj +1 more source