Results 61 to 70 of about 2,255 (184)

Equipment Optimization Scheme for High Failure Rate Auxiliary Converter of Metro Train in High Temperature and High Humidity Environment

open access: yesChengshi guidao jiaotong yanjiu
Objective Over high humidity in the operating environment of metro train auxiliary power supply system will lead to high leakage current of IGBT (insulated gate bipolar transistor), which may further cause the auxiliary converter failure.
HUANG Huijian   +5 more
doaj   +1 more source

Optimization of Power Loss Reduction in IGBTbased Three-Phase Rectifiers using Discontinuous Pulse Width Modulation Method: A SimulationBased Analysis with QSpice and Fuji IGBT Simulator

open access: yesJurnal Rekayasa Elektrika
The increasing demand for electricity supply is evident across various modern industrial sectors. Electrification advancements in the transportation industry aim to address environmental and energy issues and continue to evolve.
Rio Pratama   +3 more
doaj   +1 more source

A Single Phase Active Front-End Converter for Unity Power Factor

open access: yesJurnal Rekayasa Elektrika
A rectifier is an electronic circuit that converts Alternating Current (AC) into Direct Current (DC). This circuit is very important in many electronic applications, especially in power supplies, battery chargers, and other equipment requiring a DC power
Farid Dwi Murdianto   +2 more
doaj   +1 more source

Evaluation of the power loss in IGBT single transistor device under the condition of pulse duration of 100 ns

open access: yesAIP Advances
The improvement in the reliability and lifespan of insulated gate bipolar transistor (IGBT) devices and the enhancement of system efficiency under high-frequency pulse conditions are receiving increasingly wide attention, and all of these are closely ...
Zenghui Yang   +4 more
doaj   +1 more source

Experimental electromagnetic compatibility of conducted electromagnetic interferences from an IGBT and a MOSFET in the power supply

open access: yesElectrical engineering & Electromechanics
Introduction. Most electromagnetic compatibility studies carried out in the context of power switch research are generally valid for low frequencies. This frequency restriction appears to be too restrictive for a complete analysis of the electromagnetic ...
M. E. Lahlaci, M. Miloudi, H. Miloudi
doaj   +1 more source

Type Selection and Design of Drive and Protection of Power Device of Mine-used Frequency Converter

open access: yesGong-kuang zidonghua, 2011
The paper analyzed requiements of underground devices for power device IGBT of frequency converter and electrical parameters which should be considered in type selection of IGBT, and designed a drive and protection circuit of IGBT by use of 2SD315 module.
RONG Liang   +5 more
doaj  

Power Cycling Capability and Reliability Test of IGBT Modules

open access: yes机车电传动, 2015
In order to examine the reliability of IGBT modules , IGBT package structure was analyzed and a new model of powercycling was proposed based on the traditional method.
LI Shiping   +4 more
doaj  

IGBT Gate Boost Drive Technology for Promoting the Overload Capacity of Traction Converter

open access: yesMicromachines
Under certain circumstances, a high-speed railway may require constant acceleration or emergency braking, in which case the inverter may experience short-term overload conditions and the current passing through the IGBT will go beyond the rated design ...
Yunxin Zhang   +7 more
doaj   +1 more source

1.7 kV IGBT Driver Based on Electromagnetism Isolation

open access: yesKongzhi Yu Xinxi Jishu, 2015
The basic characteristics of IGBT driver were analyzed and an IGBT driver based on electromagnetism isolation was designed. Chopping and short-circuit test researches on the driver were executed.
XIE Shunmeng   +4 more
doaj  

Research on Even Flow of High-power IGBT Module in Parallel

open access: yesKongzhi Yu Xinxi Jishu, 2011
The higher load current can be withstood when the high-power IGBT running in parallel. But the even flow problems of static and dynamic state require consideration when designing high-power IGBT in parallel.
QI Shanjun   +3 more
doaj  

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