Results 71 to 80 of about 12,603 (120)

ПРОЕКТИРОВАНИЕ IGBT-ПРИБОРА ВЫСОКОГО БЫСТРОДЕЙСТВИЯ [PDF]

open access: yes, 2019
Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar
И. Ю. Ловшенко   +7 more
core  

Design and Simulation of a Carrier PWM‐Based Capacitor to Support a Dynamic Voltage Restorer for Voltage Swell and Voltage Mitigation in the Distribution System

open access: yesEngineering Reports, Volume 8, Issue 7, July 2026.
This study designs and simulates a capacitor‐supported dynamic voltage restorer (DVR) using Carrier PWM control to mitigate voltage sags, swells, and distortions in three‐phase distribution systems. The self‐supported DVR employs a DC‐link capacitor as an energy buffer, eliminating external storage needs. Control via Synchronous Reference Frame Theory (
Tamiru Debela Awas   +3 more
wiley   +1 more source

A Simplified Spice Model for IGBT [PDF]

open access: yes, 1998
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific ...
O. Elmazria   +8 more
core   +2 more sources

Integral Sliding Mode Controller for Modular Multilevel Inverter‐Based PMSM Drives

open access: yesEngineering Reports, Volume 8, Issue 6, June 2026.
The primary contribution of this work is the development of an integral sliding mode controller (ISMC) designed for motor speed and current regulation, optimized to enhance control performance with the unique MMLI structure. The proposed MMLI architecture offers a reduced number of switching components and passive elements, thereby minimizing system ...
Taiea A. Ahmed   +6 more
wiley   +1 more source

Research on the IGBT Paralleling Application

open access: yes, 2015
It introduced the main influence of current balancing of IGBT elements connected in parallel. According to the paralleling application of 1 200 V/900 A IGBT, it designed an IGBT parallel driver, low inductance busbar and the radiator, and carried out the
XIE Sunmeng   +5 more
core   +1 more source

The parameters of the IGBT module.

open access: yes, 2020
The parameters of the IGBT module.
Jianhua Ji (4029902)   +2 more
core   +1 more source

Etude, modélisation et réalisation d’un convertisseur DC/AC pour système de pompage photovoltaïque de 4 kVA

open access: yesRevue des Énergies Renouvelables, 2013
L’estimation des pertes par effet joule de l’étage de puissance est une étape incontournable, lors de la conception d’un convertisseur. En effet, cette estimation nous permet de mieux évaluer les performances du commutateur, de bien dimensionner le ...
S. Chikhi   +4 more
doaj  

Study the IGBT power keys in electronics

open access: yes, 2021
Об’єктом дослідження кваліфікаційної роботи є дослідження силових ключів IGBT. Мета роботи полягає у огляді сучасних силових ключів на базі IGBT та дослідження пристроїв електроніки що включають в себе силові ключі IGBT. Зокрема, методики використання,
Гриценко, В.Ю.
core  

Series connection of IGBT

open access: yes, 2010
International audienceThis article analyzes the effects of parasitic capacitances in the series connection of IGBT, which exist naturally due to gate driver and power circuit geometry.
Frey, David   +9 more
core   +1 more source

Equipment Optimization Scheme for High Failure Rate Auxiliary Converter of Metro Train in High Temperature and High Humidity Environment

open access: yesChengshi guidao jiaotong yanjiu
Objective Over high humidity in the operating environment of metro train auxiliary power supply system will lead to high leakage current of IGBT (insulated gate bipolar transistor), which may further cause the auxiliary converter failure.
HUANG Huijian   +5 more
doaj   +1 more source

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