Results 91 to 100 of about 12,603 (120)

Type Selection and Design of Drive and Protection of Power Device of Mine-used Frequency Converter

Gong-kuang zidonghua, 2011
The paper analyzed requiements of underground devices for power device IGBT of frequency converter and electrical parameters which should be considered in type selection of IGBT, and designed a drive and protection circuit of IGBT by use of 2SD315 module.
RONG Liang, YU Xi-yang, GONG Fu-zhang, HE Jia-jian, CHEN Zhuo, CUI Dong-po   +5 more
doaj  

Review of IGBT models

, 2000
In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed.
Sheng, Kuang, Finney, Stephen J., Finney, Stephen Jon, Williams, Barry W., Williams, Barry Wayne, Sheng, K   +5 more
core  

Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development [PDF]

, 1992
A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices.
Neudeck, G.W., Gilbert, P.V.
core  

Experimental electromagnetic compatibility of conducted electromagnetic interferences from an IGBT and a MOSFET in the power supply

Electrical engineering & Electromechanics
Introduction. Most electromagnetic compatibility studies carried out in the context of power switch research are generally valid for low frequencies. This frequency restriction appears to be too restrictive for a complete analysis of the electromagnetic ...
M. E. Lahlaci, M. Miloudi, H. Miloudi
doaj   +1 more source

3.3 kV PT-IGBT with voltage-sensor monolithically integrated

, 2015
An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV-50
Hevia, D.F., Flores, David, Urresti, J., Hidalgo, Salvador   +3 more
core   +1 more source

Research on Even Flow of High-power IGBT Module in Parallel

Kongzhi Yu Xinxi Jishu, 2011
The higher load current can be withstood when the high-power IGBT running in parallel. But the even flow problems of static and dynamic state require consideration when designing high-power IGBT in parallel.
QI Shanjun, WENG Xingfang, SONG Wenjuan, HUANG Nan   +3 more
doaj  

1.7 kV IGBT Driver Based on Electromagnetism Isolation

Kongzhi Yu Xinxi Jishu, 2015
The basic characteristics of IGBT driver were analyzed and an IGBT driver based on electromagnetism isolation was designed. Chopping and short-circuit test researches on the driver were executed.
XIE Shunmeng, YANG Guang, OUYANG Liu, WEI Haishan, ZHANG Donghui   +4 more
doaj  

Design of high-speed IGBT device

, 2013
Представлены результаты исследования влияния технологических параметров формирования структуры IGBT-прибора на его динамические характеристики.
Турцевич, А. С., Ловшенко, И. Ю., Стемпицкий, В. Р., Шелибак, И.   +3 more
core   +1 more source

Design of high-speed IGBT device

, 2020
Представлены результаты исследования влияния технологических параметров формирования структуры IGBT-прибора на его динамические характеристики.
Турцевич, А. С., Ловшенко, И. Ю., Стемпицкий, В. Р., Шелибак, И.   +3 more
core  

3.3 kV PT-IGBT with voltage-sensor monolithically integrated

An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV-50
Flores D, Urresti J, Hidalgo S, Hevia D
core   +2 more sources