Results 91 to 100 of about 13,106 (216)

Thermal Performance Analysis of IGBT Module Packaging

, 2013
Afinite element model of IGBT module packaging was constructed by utilizing FEAsoftware of ANSYS. Effect of different grease thickness, equivalent heat transfer coefficient, base plate thickness and material, solder thickness and material, substrate ...
XIN Li, ZHANG Chen-lin, HU Chang-fa, DING Jie, TANG Yu-tu   +4 more
core   +1 more source

IGBT Overcurrent Capabilities in Resonant Circuits

Sensors
The control of IGBT (insulated gate bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor) is of great interest nowadays as they are widely used in electric vehicles, photovoltaic applications, and a multitude of systems. The field of power electronics and their correct activation ensures that the transistors are operated ...
Al-Hadithi, Basil Mohammed, Jiménez Sarria, Miguel   +1 more
openaire   +5 more sources

Experimental electromagnetic compatibility of conducted electromagnetic interferences from an IGBT and a MOSFET in the power supply

Electrical engineering & Electromechanics
Introduction. Most electromagnetic compatibility studies carried out in the context of power switch research are generally valid for low frequencies. This frequency restriction appears to be too restrictive for a complete analysis of the electromagnetic ...
M. E. Lahlaci, M. Miloudi, H. Miloudi
doaj   +1 more source

Application Research on SiC Hybrid IGBT Devices

, 2015
SiC power devices have the advantages of high frequency, energy saving, high power, high temperature resistance and radiation hardening. The current application of SiC was introduced, the characteristic of SiC-JBS, SiC-MOSFET and SiC hybrid IGBT were ...
XIN Li, CHEN Yuqi, TANG Wei, WEI Haishan, OUYANG Liu, ZHANG Donghui   +5 more
core   +1 more source

Research on Even Flow of High-power IGBT Module in Parallel

Kongzhi Yu Xinxi Jishu, 2011
The higher load current can be withstood when the high-power IGBT running in parallel. But the even flow problems of static and dynamic state require consideration when designing high-power IGBT in parallel.
QI Shanjun, WENG Xingfang, SONG Wenjuan, HUANG Nan   +3 more
doaj  

The IGBT test set-up design

, 2008
An experimental half bridge converter setup is designed in order to explore the switching characteristics and losses of a new type of IGBT module. A specific digital control circuit and a drive circuit for an IGBT are designed and integrated into one PCB
Liu, Kun, Hirsi, Abdirahman
core   +1 more source

Review of IGBT models

, 2000
In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed.
Sheng, Kuang, Finney, Stephen J., Finney, Stephen Jon, Williams, Barry W., Williams, Barry Wayne, Sheng, K   +5 more
core  

Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development [PDF]

, 1992
A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices.
Neudeck, G.W., Gilbert, P.V.
core  

Thermal/Mechanical Characteristics Simulation Analysis of Solder Layer Damage in IGBT Modules. [PDF]

Micromachines (Basel)
Zhou J, Chen J, He L, Tang H, Wu X.
europepmc   +1 more source

Reliability-oriented performance evaluation of PV inverters using wide bandgap semiconductors. [PDF]

PLoS One
Kshatri SS, Dhillon J, Mishra S, Sharma NK, Jadoun VK.   +4 more
europepmc   +1 more source